Yoshihiro Sato

TL;DR: In this article, a semiconductor electronic device comprises a substrate; a buffer layer formed on the substrate, the buffer layer including not less than two layers of composite layer, in which a first semiconductor layer formed of a nitride-based compound semiconductor, having a lattice constant smaller than a substrate and a thermal expansion coefficient larger than a thermalexpansion coefficient of the substrate; and an intermediate layer provided between the substrate and buffer layer, the intermediate layer being formed by a polysilicon-based semiconductor having a linear combination of lattice constants smaller than the first

TL;DR: In this paper, a manufacturing method for obtaining toner particles having uniform dispersion of particles of a release agent in the toner particle without being exposed on the surfaces and having narrow and sharp distribution of the particle size in the manufacture of toner by an emulsion dispersion method was proposed.

Abstract: A vertical semiconductor element comprises: an electro-conductive substrate; a GaN layer, as a nitride compound semiconductor layer, which is selectively grown as a convex shape on one surface of the electro-conductive substrate through a buffer layer; a source electrode as a first electrode formed on the GaN layer; and a drain electrode as a second electrode formed on another surface of the electro-conductive substrate.

TL;DR: In this paper, two parallel trenches are formed between neighboring elements forming regions in a p-type semiconductor layer containing a plurality of arrayed element forming regions and a convex portion formed between the two trenches is cut in separating the semiconductor devices.

TL;DR: In this article, an active layer of a GaN-based semiconductor is formed on a silicon substrate and a trench is formed in the active layer and extends from a top surface of active layer to a depth reaching the silicon substrate.