Y
Yoshinari Kamakura
Researcher at Osaka University
Publications - 187
Citations - 1892
Yoshinari Kamakura is an academic researcher from Osaka University. The author has contributed to research in topics: Monte Carlo method & Ballistic conduction. The author has an hindex of 22, co-authored 186 publications receiving 1688 citations. Previous affiliations of Yoshinari Kamakura include Shizuoka University & Osaka Institute of Technology.
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Journal ArticleDOI
A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization model
Tatsuya Kunikiyo,M. Takenaka,Yoshinari Kamakura,Mitsuru Yamaji,H. Mizuno,Masato Morifuji,Kenji Taniguchi,Chihiro Hamaguchi +7 more
TL;DR: In this article, the physics of electron transport in bulk silicon is investigated by using a newly developed Monte Carlo simulator which improves the state-of-the-art treatment of hot carrier transport.
Journal ArticleDOI
Impact ionization model for full band Monte Carlo simulation
Yoshinari Kamakura,H. Mizuno,Mitsuru Yamaji,Masato Morifuji,K. Taniguchi,Chihiro Hamaguchi,Tatsuya Kunikiyo,M. Takenaka +7 more
TL;DR: In this paper, the impact ionization rate in silicon is numerically derived from wave functions and energy band structure based on an empirical pseudopotential method, which is well fitted to an analytical formula with a power exponent of 4.6.
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Electron mobility calculation for graphene on substrates
TL;DR: In this paper, the electron mobility in graphene was calculated for three different substrates: SiO2, HfO2 and hexagonal boron nitride (h-BN).
Journal ArticleDOI
A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
Antonio Abramo,L. Baudry,Rossella Brunetti,R. Castagné,M. Charef,F. Dessenne,Philippe Dollfus,Robert W. Dutton,W.L. Engl,R. Fauquembergue,C. Fiegna,Massimo V. Fischetti,S. Galdin,Neil Goldsman,M. Hackel,Chihiro Hamaguchi,Karl Hess,K. Hennacy,P. Hesto,J.M. Higman,Takahiro Iizuka,Christoph Jungemann,Yoshinari Kamakura,Hans Kosina,Tatsuya Kunikiyo,Steven E. Laux,Hongchin Lin,C. Maziar,H. Mizuno,H.J. Peifer,S. Ramaswamy,Nobuyuki Sano,P.G. Scrobohaci,Siegfried Selberherr,M. Takenaka,Ting-Wei Tang,Kenji Taniguchi,J. L. Thobel,R. Thoma,K. Tomizawa,Masaaki Tomizawa,T. Vogelsang,Shiuh-Luen Wang,Xiaolin Wang,Chiang-Sheng Yao,P. D. Yoder,Akira Yoshii +46 more
TL;DR: Although the computed data vary widely, depending on the models and input parameters which are used, they provide for the first time a quantitative (though not comprehensive) comparison of Boltzmann Equation solutions.
Journal ArticleDOI
Theoretical performance estimation of silicene, germanene, and graphene nanoribbon field-effect transistors under ballistic transport
TL;DR: In this article, the performance potentials of silicene nanoribbon (SiNR), germanene nanorsoribbons (GeNR), and graphene nanoribrbons (GNR) as field effect transistor (FET) channel materials were assessed.