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Author

Yoshinobu Nakatani

Other affiliations: University of Paris-Sud
Bio: Yoshinobu Nakatani is an academic researcher from University of Electro-Communications. The author has contributed to research in topics: Magnetization & Magnetic domain. The author has an hindex of 38, co-authored 194 publications receiving 7386 citations. Previous affiliations of Yoshinobu Nakatani include University of Paris-Sud.


Papers
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Journal ArticleDOI
01 Mar 2005-EPL
TL;DR: In this paper, a spin transfer torque term in the Landau-Lifchitz-Gilbert equation was proposed to explain the motion of magnetic domain walls (DW) in nanowires carrying a current.
Abstract: In order to explain recent experiments reporting a motion of magnetic domain walls (DW) in nanowires carrying a current, we propose a modification of the spin transfer torque term in the Landau-Lifchitz-Gilbert equation. We show that it explains, with reasonable parameters, the measured DW velocities as well as the variation of DW propagation field under current. We also introduce coercivity by considering rough wires. This leads to a finite DW propagation field and finite threshold current for DW propagation, hence we conclude that threshold currents are extrinsic. Some possible models that support this new term are discussed.

992 citations

Journal ArticleDOI
25 Sep 2008-Nature
TL;DR: It is shown that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As, allowing manipulation of the magnetization direction.
Abstract: Conventional semiconductor devices use electric fields to control conductivity, a scalar quantity, for information processing. In magnetic materials, the direction of magnetization, a vector quantity, is of fundamental importance. In magnetic data storage, magnetization is manipulated with a current-generated magnetic field (Oersted-Ampere field), and spin current is being studied for use in non-volatile magnetic memories. To make control of magnetization fully compatible with semiconductor devices, it is highly desirable to control magnetization using electric fields. Conventionally, this is achieved by means of magnetostriction produced by mechanically generated strain through the use of piezoelectricity. Multiferroics have been widely studied in an alternative approach where ferroelectricity is combined with ferromagnetism. Magnetic-field control of electric polarization has been reported in these multiferroics using the magnetoelectric effect, but the inverse effect-direct electrical control of magnetization-has not so far been observed. Here we show that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As. The magnetic anisotropy, which determines the magnetization direction, depends on the charge carrier (hole) concentration in (Ga,Mn)As. By applying an electric field using a metal-insulator-semiconductor structure, the hole concentration and, thereby, the magnetic anisotropy can be controlled, allowing manipulation of the magnetization direction.

615 citations

Journal ArticleDOI
TL;DR: In this paper, the spin degree of freedom of electrons and/or holes, which can also interact with their orbital moments, is described with respect to the spin generation methods as detailed in Sections 2-~-9.

614 citations

Journal ArticleDOI
TL;DR: Efficient switching of the vortex core without magnetic-field application is achieved owing to resonance, which opens up the potentiality of a simple magnetic disk as a building block for spintronic devices such as a memory cell where the bit data is stored as the direction of the nanometre-scale core magnetization.
Abstract: A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate for a memory cell for future non-volatile data-storage devices. Thus, an understanding of the stability and dynamical behaviour of the magnetic vortex is a major requirement for developing magnetic data-storage technology. Since the publication of experimental proof for the existence of a nanometre-scale core with out-of-plane magnetization in a magnetic vortex, the dynamics of vortices have been investigated intensively. However, a way to electrically control the core magnetization, which is a key for constructing a vortex-core memory, has been lacking. Here, we demonstrate the electrical switching of the core magnetization by using the current-driven resonant dynamics of the vortex; the core switching is triggered by a strong dynamic field that is produced locally by a rotational core motion at a high speed of several hundred metres per second. Efficient switching of the vortex core without magnetic-field application is achieved owing to resonance. This opens up the potentiality of a simple magnetic disk as a building block for spintronic devices such as a memory cell where the bit data is stored as the direction of the nanometre-scale core magnetization.

477 citations

Journal ArticleDOI
TL;DR: In this paper, a sputtered CoFeB/MgO-based magnetic tunnel junction with a perpendicular magnetic easy axis in a static external magnetic field is realized for a ∼180° magnetization reversal, where the bias voltage pulse duration is adjusted to a half period of the precession.
Abstract: The electric field-induced ∼180° magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses.

376 citations


Cited by
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Journal ArticleDOI
11 Apr 2008-Science
TL;DR: The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip and is an example of the move toward innately three-dimensional microelectronic devices.
Abstract: Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of ∼10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.

4,052 citations

Journal ArticleDOI
TL;DR: From this description, potential applications of skyrmions as information carriers in magnetic information storage and processing devices are envisaged.
Abstract: Magnetic skyrmions are particle-like nanometre-sized spin textures of topological origin found in several magnetic materials, and are characterized by a long lifetime. Skyrmions have been observed both by means of neutron scattering in momentum space and microscopy techniques in real space, and their properties include novel Hall effects, current-driven motion with ultralow current density and multiferroic behaviour. These properties can be understood from a unified viewpoint, namely the emergent electromagnetism associated with the non-coplanar spin structure of skyrmions. From this description, potential applications of skyrmions as information carriers in magnetic information storage and processing devices are envisaged.

3,132 citations

Journal ArticleDOI
TL;DR: The authors are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials, allowing faster, low-energy operations: spin electronics is on its way.
Abstract: Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a capacitor to save it. In magnetic recording, magnetic fields have been used to read or write the information stored on the magnetization, which 'measures' the local orientation of spins in ferromagnets. The picture started to change in 1988, when the discovery of giant magnetoresistance opened the way to efficient control of charge transport through magnetization. The recent expansion of hard-disk recording owes much to this development. We are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials. Ultimately, 'spin currents' could even replace charge currents for the transfer and treatment of information, allowing faster, low-energy operations: spin electronics is on its way.

2,191 citations

Journal ArticleDOI
11 Aug 2011-Nature
TL;DR: To prove the potential of in-plane current switching for spintronic applications, this work constructs a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures.
Abstract: Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.

2,099 citations

Journal ArticleDOI
09 Sep 2005-Science
TL;DR: “Spintronics,” in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics.
Abstract: “Spintronics,” in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics. A complete logic architecture can be constructed, which uses planar magnetic wires that are less than a micrometer in width. Logical NOT, logical AND, signal fan-out, and signal cross-over elements each have a simple geometric design, and they can be integrated together into one circuit. An additional element for data input allows information to be written to domain-wall logic circuits.

1,955 citations