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Youn Sung Choi
Researcher at University of Florida
Publications - 10
Citations - 699
Youn Sung Choi is an academic researcher from University of Florida. The author has contributed to research in topics: Time-dependent gate oxide breakdown & Gate dielectric. The author has an hindex of 6, co-authored 10 publications receiving 675 citations.
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Journal ArticleDOI
Uniaxial-process-induced strained-Si: extending the CMOS roadmap
TL;DR: In this article, a more complete data set of n-and p-channel MOSFET piezoresistance and strain-altered gate tunneling is presented along with new insight into the physical mechanisms responsible for hole mobility enhancement.
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Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors
TL;DR: In this article, gate leakage currents were measured for (100) p-type silicon metal-oxide-semiconductor capacitors with TaN gate and SiO2 dielectric.
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Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function
TL;DR: In this paper, the strain-altered hole tunneling current from the p-type inversion layer of Ge was measured to be ∼4 times larger than that for the Si channel MOSFET, since the larger strain-induced valence band-edge splitting in Ge results in more hole repopulation into a subband with a smaller out-ofplane effective mass and a lower tunneling barrier height.
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Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors
S. Y. Son,Youn Sung Choi,Pradeep Kumar,Hyunwoo Park,Toshikazu Nishida,Rajiv K. Singh,Scott E. Thompson +6 more
TL;DR: In this paper, the authors measured the uniaxial-mechanical-stress altered gate leakage current and dielectric constant of silicon metal-oxide-semiconductor (MOS) devices with nitrided Hf-silicate (HfSiON) dielectrics.
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Total Ionizing Dose Effects on Strained ${\rm HfO}_{2}$ -Based nMOSFETs
Hyunwoo Park,S.K. Dixit,Youn Sung Choi,Ronald D. Schrimpf,Daniel M. Fleetwood,Toshikazu Nishida,Scott E. Thompson +6 more
TL;DR: In this paper, a four-point bending jig was used to apply external mechanical stress on uniaxially stressed HfO2-based nMOSFETs.