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Young Rae Jang

Bio: Young Rae Jang is an academic researcher from Japan Advanced Institute of Science and Technology. The author has contributed to research in topics: Thin film & Crystallization. The author has an hindex of 2, co-authored 2 publications receiving 24 citations.

Papers
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Journal ArticleDOI
TL;DR: Amorphous Si (a-Si) films with lower hydrogen contents show better adhesion to glass during flash lamp annealing (FLA), whereas a-Si films deposited by catalytic CVD (Cat-CVD) partially adhere even after crystallization as mentioned in this paper.

21 citations

Proceedings ArticleDOI
11 May 2008
TL;DR: In this paper, a flash lamp annealing (FLA) was used to crystallize a-Si films with only one pulse of less than 10 ms duration, and use of Cat-CVD and Hot-Wire CVD was employed to fabricate high-efficiency thin-film poly-Si solar cells.
Abstract: We propose a novel production method to fabricate high-efficiency thin-film poly-Si solar cells using flash lamp annealing (FLA) for crystallization of micrometer-order-thick p-i-n amorphous silicon (a-Si) structure, prepared by catalytic chemical vapor deposition (Cat-CVD, Hot-Wire CVD) on low-temperature glass substrates and following high-pressure water vapor annealing for defect passivation. The FLA enables us to crystallize a-Si films with only one pulse of less than 10 ms duration, and use of Cat-CVD provides a-Si cost-effectively because of high deposition rate of a-Si over 10 nm/s. Secondary ion mass spectroscopy (SIMS) profiles reveal that diffusion of dopants in p- or n-type layers is sufficiently suppressed after FLA, indicating possibility of simultaneous crystallization of p-i-n stacked a-Si films. High-pressure water vapor annealing (HPWVA) enhances the minority carrier lifetime of the poly-Si up to about 10 μs and drastically improves diode properties of the p-i-n poly-Si structure. No light-induced degradation is observed in the solar cell property of the poly-Si solar cell after 24-hour 1-sun light soaking.

3 citations


Cited by
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Journal ArticleDOI
TL;DR: Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick amorphous Si (a-Si) films deposited on glass substrates.
Abstract: Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick amorphous Si (a-Si) films deposited on glass substrates. The EC starts from the edges of the a-Si films due to additional heating from flash lamp light. This is followed by lateral crystallization with a velocity on the order of m/s, leaving behind periodic microstructures in which regions containing several hundreds of nm-ordered grains and regions consisting of only 10-nm-sized fine grains alternatively appear. The formation of the dense grains can be understood as explosive solid-phase nucleation, whereas the several hundreds of nanometer-sized grains, stretched in the lateral direction, are probably formed through explosive liquid-phase epitaxy. This phenomenon will be applied to the high-throughput formation of thick poly-Si films for solar cells.

84 citations

Journal ArticleDOI
TL;DR: In this article, the use of pulsed light in photovoltaic manufacturing is discussed from a photonic physics perspective, the relevant heat transfer mechanisms, as well as its impact on the major PV manufacturing sectors.

40 citations

Journal ArticleDOI
TL;DR: In this paper, the microstructure of flash-lamp-crystallized poly-Si films is controlled by the ignition of EC at Si film edges and the homogeneous heating of interior a-Si.

20 citations

Journal ArticleDOI
TL;DR: In this paper, a thin-film solar cell was fabricated using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5µm-thick amorphous Si (a-Si), deposited on Cr-coated glass substrates.

20 citations