Y
YS Yok-Siang Oei
Researcher at Eindhoven University of Technology
Publications - 73
Citations - 2462
YS Yok-Siang Oei is an academic researcher from Eindhoven University of Technology. The author has contributed to research in topics: Optical amplifier & Laser. The author has an hindex of 19, co-authored 73 publications receiving 2364 citations.
Papers
More filters
Journal ArticleDOI
Lasing in metallic-coated nanocavities
MT Martin Hill,YS Yok-Siang Oei,Barry Smalbrugge,Youcai Zhu,Tjibbe de Vries,Peter J. van Veldhoven,Frank W. M. van Otten,TJ Tom Eijkemans,Jaros lstrok,aw P. Turkiewicz,Huug de Waardt,EJ Erik Jan Geluk,Soon-Hong Kwon,Yong-Hee Lee,R Richard Nötzel,MK Meint Smit +15 more
TL;DR: In this paper, the first laser operation in an electrically pumped metallic-coated nanocavity formed by a semiconductor heterostructure encapsulated in a thin gold film was reported.
Journal ArticleDOI
A fast low-power optical memory based on coupled micro-ring lasers.
MT Martin Hill,H.J.S. Dorren,Tjibbe de Vries,Xaveer Leijtens,Jan Hendrik den Besten,Barry Smalbrugge,YS Yok-Siang Oei,Hans Binsma,GD Giok-Djan Khoe,MK Meint Smit +9 more
TL;DR: Simulations show that the ring lasers with extremely small size and low operating power presented here have the potential for much smaller dimensions and switching times, and large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit.
Journal ArticleDOI
Photoluminescence characterization of Er-implanted Al2O3 films
van den Gn Gerlas Hoven,E. Snoeks,Albert Polman,van Jwm Uffelen,YS Yok-Siang Oei,MK Meint Smit +5 more
TL;DR: In this article, Al2O3 films on oxidized Si substrates were implanted with 800 keV Er ions to peak concentrations ranging from 0.01 to 1 at, with only moderate concentration quenching effects.
Journal ArticleDOI
Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range : wavelength tuning, stacking, polarization control, and lasing
R Richard Nötzel,S Sanguan Anantathanasarn,PJ René van Veldhoven,Fwm Frank van Otten,TJ Tom Eijkemans,Achim Trampert,Biswarup Satpati,Yohan Barbarin,Eajm Erwin Bente,YS Yok-Siang Oei,Tjibbe de Vries,EJ Erik Jan Geluk,E Barry Smalbrugge,MK Meint Smit,JH Joachim Wolter +14 more
TL;DR: In this paper, the thickness of GaAs interlayers is used to tune the emission wavelength of InAs/InP QDs in the 1.55 µm wavelength range.
Journal ArticleDOI
Observation of Q-switching and mode-locking in two-section InAs-InP (100) quantum dot lasers at 1.53 µm
Martijn J. R. Heck,Eajm Erwin Bente,E Barry Smalbrugge,YS Yok-Siang Oei,MK Meint Smit,S Sanguan Anantathanasarn,R Richard Nötzel +6 more
TL;DR: In this article, the first observation of passive mode-locking in two-section quantum-dot laser operating at wavelengths around 1.55 µm is reported and the complete output spectrum is shown to be coherent over 10 nm.