Yu. G. Sidorov

Bio: Yu. G. Sidorov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Molecular beam epitaxy & Epitaxy. The author has an hindex of 15, co-authored 111 publications receiving 812 citations. Previous affiliations of Yu. G. Sidorov include Russian Academy & Tomsk State University.

Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

Abstract: Growth processes were considered for heteroepitaxial structures based on a mercury-cadmium-telluride (MCT) solid solution deposited on GaAs and Si alternative substrates by molecular-beam epitaxy. Physical and chemical processes of growth and defect-generation mechanisms were studied for CdZnTe epitaxy on atomically clean singular and vicinal surfaces of gallium-arsenide substrates and CdHgTe films on CdZnTe/GaAs surfaces. ZnTe single-crystalline films were grown on silicon substrates. Methods for reducing the content of defects in CdZnTe/GaAs and CdHgTe films were developed. Equipment for molecular-beam epitaxy was designed for growing the heteroepitaxial structures on large-diameter substrates with a highly uniform composition over the area and their control in situ. Heteroepitaxial MCT layers with excellent electrical parameters were grown on GaAs by molecular-beam epitaxy.

HgCdTe Heterostructures on Si (310) Substrates for Midinfrared Focal Plane Arrays

Abstract: Results of studies of the molecular beam epitaxial growth of HgCdTe alloys on Si substrates as large as 100 mm in diameter are presented. Optimum conditions for obtaining HgCdTe/Si(310) heterostructures of the device quality for the spectral range of 3–5 μm are determined. The results of measurements and discussion of photoelectric parameters of an infrared photodetector of a format of 320 × 256 elements with a step of 30 μm based on a hybrid assembly of a matrix photosensitive cell with a Si multiplexer are presented. A high stability of photodetector parameters to thermocycling from room temperature to liquid-nitrogen temperature is shown.

Peculiarities of the MBE growth physics and technology of narrow-gap II-VI compounds

Abstract: Copyright (c) 1997 Elsevier Science S.A. All rights reserved. Experimental research and a crystallochemical consideration of the chemical interaction of the film and substrate components in the A 2 B 6 /GaAs heterostructure were carried out. It was found that surface faceting, twinning and breaking of stoichiometry of the growing structure can be explained by the excess of valent electrons at the A 2 B 6 /GaAs interface. The films were grown in a multichamber mercury cadmium telluride (MCT) MBE system with different compositions of the residual gas phase in different chambers. The MCT growth chamber is equipped with a system of molecular sources of original design and a built-in automatic ellipsometer. The used system of sources allows for growing MCT films without sample rotation, uniform in composition over the substrate area of 51 mm in diameter (the composition gradient does not exceed 0.002 cm −1 ). Because there is no substrate rotation, continuous measurements of film composition can be performed during growth, and structures with specified composition over thickness can be grown. The introduction of layers with a varying energy gap into the heteroepitaxial structure increases the carrier's lifetime up to 2 μs for x=0.22 (77 K). A model of defects, determining the electric parameters of MBE grown films in the presence of gallium sources, is suggested. Linear photoconductor arrays for the 8-12 μm band with background limited parameters were fabricated from the grown MCT films. © 1997 Elsevier Science S.A.

The 2016 terahertz science and technology roadmap

Abstract: Science and technologies based on terahertz frequency electromagnetic radiation (100 GHz–30 THz) have developed rapidly over the last 30 years. For most of the 20th Century, terahertz radiation, then referred to as sub-millimeter wave or far-infrared radiation, was mainly utilized by astronomers and some spectroscopists. Following the development of laser based terahertz time-domain spectroscopy in the 1980s and 1990s the field of THz science and technology expanded rapidly, to the extent that it now touches many areas from fundamental science to 'real world' applications. For example THz radiation is being used to optimize materials for new solar cells, and may also be a key technology for the next generation of airport security scanners. While the field was emerging it was possible to keep track of all new developments, however now the field has grown so much that it is increasingly difficult to follow the diverse range of new discoveries and applications that are appearing. At this point in time, when the field of THz science and technology is moving from an emerging to a more established and interdisciplinary field, it is apt to present a roadmap to help identify the breadth and future directions of the field. The aim of this roadmap is to present a snapshot of the present state of THz science and technology in 2017, and provide an opinion on the challenges and opportunities that the future holds. To be able to achieve this aim, we have invited a group of international experts to write 18 sections that cover most of the key areas of THz science and technology. We hope that The 2017 Roadmap on THz science and technology will prove to be a useful resource by providing a wide ranging introduction to the capabilities of THz radiation for those outside or just entering the field as well as providing perspective and breadth for those who are well established. We also feel that this review should serve as a useful guide for government and funding agencies.

Fast, Self-Driven, Air-Stable, and Broadband Photodetector Based on Vertically Aligned PtSe2/GaAs Heterojunction

Abstract: This work shows the large‐area growth of high‐quality vertically aligned PtSe 2 , and its application to photodetectors based on PtSe 2 ‐GaAs heterojunctions which exhibit a broadband sensitivity to illumination ranging from deep ultraviolet to near‐infrared light, with a peak sensitivity in the region from 650 to 810 nm. The high‐performance broadband photodetector will develop the next‐generation 2D Group‐10 materials based optoelectronic devices.

Progress, challenges, and opportunities for HgCdTe infrared materials and detectors

Abstract: This article presents a review on the current status, challenges, and potential future development opportunities for HgCdTe infrared materials and detectortechnology. A brief history of HgCdTe infrared technology is firstly summarized and discussed, leading to the conclusion that HgCdTe-based infrared detectors will continue to be a core infrared technology with expanded capabilities in the future due to a unique combination of its favourable properties. Recent progress and the current status of HgCdTe infrared technology are reviewed, including material growth,device architecture, device processing, surface passivation, and focal plane array applications. The further development of infrared applications requires that future infrared detectors have the features of lower cost, smaller pixel size, larger array format size, higher operating temperature, and multi-band detection, which presents a number of serious challenges to current HgCdTe-based infrared technology. The primary challenges include well controlled p-type doping, lower cost, larger array format size, higher operating temperature, multi-band detection, and advanced plasma dry etching. Various new concepts and technologies are proposed and discussed that have the potential to overcome the existing primary challenges that are inhibiting the development of next generation HgCdTeinfrared detectortechnology.

Progress in Infrared Photodetectors Since 2000

Abstract: The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

Quantum dots-in-a-well infrared photodetectors

Abstract: Novel InAs/InGaAs quantum dots-in-a-well (DWELL) infrared photodetectors are reviewed. These detectors, in which the active region consists of InAs quantum dots (QDs) embedded in an InGaAs quantum well, represent a hybrid between a conventional quantum well infrared photodetector (QWIP) and a QD infrared photodetector (QDIP). Like QDIPs, DWELL detectors display normal incidence operation without gratings or optocouplers while demonstrating reproducible 'dial-in recipes' for control over the operating wavelength, like QWIPs. Using femtosecond spectroscopy, long carrier lifetimes have been observed in DWELL heterostructures, suggesting their potential for high temperature operation. Moreover, DWELL detectors have also demonstrated bias-tunability and multicolour operation in the mid-wave infrared (3–5 µm), long-wave infrared (LWIR, 8–12 µm) and very long-wave infrared (>14 µm) regimes. We have recently developed LWIR 320 × 256 focal plane arrays operating at liquid nitrogen temperatures. One of the potential problems with these detectors is the low quantum efficiency, which translates into low responsivity and detectivity. Some solutions for mitigating these problems are suggested at the end of this paper.