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Author

Yue Kuo

Bio: Yue Kuo is an academic researcher. The author has contributed to research in topics: Doping & Deposition (chemistry). The author has an hindex of 1, co-authored 1 publications receiving 2 citations.

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Journal Article
TL;DR: In this article, the authors evaluated the field effect mobility ( µFE) for a-Si TFTs at different temperatures for aSi deposition (Tsub), and the µFE showed a maximum in the temperature range of 200~250°C.
Abstract: We evaluated the field effect mobility ( µFE) for a-Si TFTs at different temperatures for a-Si deposition (Tsub). The µFE showed a maximum in the temperature range of 200~250°C. We estimated the tail localized state distribution of the a-Si films for each Tsub value from theoretical curves modified by the measurement temperature dependence of µFE. The result of the fittings showed that the a-Si tail localized state was suppressed in the Tsub range 200~250°C.
30 Jul 1994
TL;DR: In this paper, the influences of plasma parameters on the deposition of a-Si:H film and particle growth have been studied with silane discharge using amplitude-modulated RF methods, and the results showed that high deposition rate with low particle density as well as high film quality has been realized for aSi-H film.
Abstract: The influences of plasma parameters on the deposition of a-Si:H film and particle growth have been studied with silane discharge using amplitude-modulated RF methods. Plasma parameters have been measured with the Langmuir probe system and optical emission spectrometer. Behaviors and generation processes of particles have been observed by the laser scattering method. The deposited thin film has been characterized by various techniques such as Fourier-transform infrared (FT-IR) spectrometry, ESR and the constant photocurrent method (CPM). High deposition rate with low particle density as well as high film quality has been realized for a-Si:H film by amplitude-modulated RF methods.