Y
Yuji Yoshida
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 176
Citations - 3292
Yuji Yoshida is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Thin film & Organic solar cell. The author has an hindex of 29, co-authored 176 publications receiving 3123 citations. Previous affiliations of Yuji Yoshida include Japanese Ministry of International Trade and Industry & University of Tsukuba.
Papers
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High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer
TL;DR: In this paper, highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT) were reported.
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Backbone Arrangement in “Friction-Transferred” Regioregular Poly(3-alkylthiophene)s
Shuichi Nagamatsu,Wataru Takashima,Keiichi Kaneto,Yuji Yoshida,Nobutaka Tanigaki,Kiyoshi Yase,Kazuhiko Omote +6 more
TL;DR: In this paper, the regioregular highly head-to-tail-coupled poly(3-alkylthiophene) (HT-P3AT) films were prepared by a friction-transfer technique.
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Two-dimensional array of silver nanoparticles
Koji Abe,Takeshi Hanada,Yuji Yoshida,Nobutaka Tanigaki,Hiroshi Takiguchi,Hiroshi Nagasawa,Masami Nakamoto,Tomohiko Yamaguchi,Kiyoshi Yase +8 more
TL;DR: In this paper, the silver nanoparticles with a size of 5 nm were suspended in toluene and put on a hydrophilic surface of the plasma-polymerized film of osmium tetraoxide and on a water surface to form a two-dimensional array.
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Effect of Molecular Orientation of Epitaxially Grown Platinum(II) Octaethyl Porphyrin Films on the Performance of Field‐Effect Transistors
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Solution-processed n-type organic thin-film transistors with high field-effect mobility
Masayuki Chikamatsu,Shuichi Nagamatsu,Yuji Yoshida,Kazuhiro Saito,Kiyoshi Yase,Koichi Kikuchi +5 more
TL;DR: In this article, a solution-processed n-type organic thin-film transistors (OTFTs) based on C60 derivatives were used as a semiconducting layer, and the C60MC12-thin-film transistor showed high electron mobility of 0.067cm2∕Vs in saturation regime.