Yukiko Takahashi

Bio: Yukiko Takahashi is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Coercivity & Magnetization. The author has an hindex of 48, co-authored 240 publications receiving 7433 citations. Previous affiliations of Yukiko Takahashi include Western Digital.

All-optical control of ferromagnetic thin films and nanostructures

Abstract: The interplay of light and magnetism allowed light to be used as a probe of magnetic materials. Now the focus has shifted to use polarized light to alter or manipulate magnetism. Here, we demonstrate optical control of ferromagnetic materials ranging from magnetic thin films to multilayers and even granular films being explored for ultra-high-density magnetic recording. Our finding shows that optical control of magnetic materials is a much more general phenomenon than previously assumed and may have a major impact on data memory and storage industries through the integration of optical control of ferromagnetic bits.

Preparation and magnetic properties of highly coercive FePt films

Abstract: The magnetization processes of highly ordered FePt(001) films with large perpendicular magnetic anisotropy have been studied. The film morphology was controlled from isolated particles to continuous film by varying the nominal thickness (tN) of the FePt film sputter deposited directly on a MgO(001) substrate at an elevated temperature. A drastic change in the coercivity by one order of magnitude has been found at the critical thickness (tN=45 nm) where the film morphology changes from a particulate to a continuous state. A huge coercivity exceeding 40 kOe has been achieved in the film with tN=10 nm, which comprises single domain particles with an average lateral size of approximately 50 nm.

Coercivity exceeding 100 kOe in epitaxially grown FePt sputtered films

Abstract: Microstructure and magnetization processes of highly ordered FePt(001) films with large perpendicular magnetic anisotropy have been studied. The film morphology was controlled from assemblies of single-domain nanoparticles to those of multidomain islands by varying the nominal thickness (tN) of the FePt films sputter-deposited on a heated MgO(001) substrate. The change in the magnetization process from magnetization rotation to domain wall displacement is clearly demonstrated by the initial magnetization curves. Huge coercivities as high as 70 and 105kOe have been achieved in the film with single-domain particles at room temperature and 4.5K, respectively.

Spin gapless semiconducting behavior in equiatomic quaternary CoFeMnSi Heusler alloy

Abstract: In this paper, we report the signature of spin gapless semiconductor (SGS) in CoFeMnSi that belongs to the Heusler family. SGS is a new class of magnetic semiconductors which have a band gap for one spin subband and zero band gap for the other, and thus are useful for tunable spin transport based applications. We show various experimental evidences for SGS behavior in CoFeMnSi by carefully carrying out the transport and spin-polarization measurements. SGS behavior is also confirmed by first-principles band-structure calculations. The most stable configuration obtained by the theoretical calculation is verified by experiment. The alloy is found to crystallize in the cubic Heusler structure (LiMgPdSn type) with some amount of disorder and has a saturation magnetization of $3.7\phantom{\rule{0.16em}{0ex}}{\ensuremath{\mu}}_{B}/\mathrm{f}.\mathrm{u}.$ and Curie temperature of \ensuremath{\sim}620 K. The saturation magnetization is found to follow the Slater-Pauling behavior, one of the prerequisites for SGS. Nearly-temperature-independent carrier concentration and electrical conductivity are observed from 5 to 300 K. An anomalous Hall coefficient of 162 S/cm is obtained at 5 K. Point contact Andreev reflection data have yielded the current spin-polarization value of 0.64, which is found to be robust against the structural disorder. All these properties strongly suggest SGS nature of the alloy, which is quite promising for the spintronic applications such as spin injection as it can bridge the gap between the contrasting behaviors of half-metallic ferromagnets and semiconductors.

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

Abstract: Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal stability and low critical current for current-induced magnetization switching. To attain perpendicular anisotropy, a number of material systems have been explored as electrodes, which include rare-earth/transition-metal alloys, L1(0)-ordered (Co, Fe)-Pt alloys and Co/(Pd, Pt) multilayers. However, none of them so far satisfy high thermal stability at reduced dimension, low-current current-induced magnetization switching and high tunnel magnetoresistance ratio all at the same time. Here, we use interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane anisotropy. This approach requires no material other than those used in conventional in-plane-anisotropy MTJs. The perpendicular MTJs consisting of Ta/CoFeB/MgO/CoFeB/Ta show a high tunnel magnetoresistance ratio, over 120%, high thermal stability at dimension as low as 40 nm diameter and a low switching current of 49 microA.

Antiferromagnetic spintronics

Abstract: Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed Antiferromagnetic spintronics started out with studies on spin transfer, and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics Central to these endeavors are the need for predictive models, relevant disruptive materials and new experimental designs This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials It also details some of the remaining bottlenecks and suggests possible avenues for future research

Heat Assisted Magnetic Recording

Abstract: Heat-assisted magnetic recording is a promising approach for enabling large increases in the storage density of hard disk drives. A laser is used to momentarily heat the recording area of the medium to reduce its coercivity below that of the applied magnetic field from the recording head. In such a system, the recording materials have a very high magnetic anisotropy, which is essential for the thermal stability of the magnetization of the extremely small grains in the medium. This technology involves new recording physics, new approaches to near field optics, a recording head that integrates optics and magnetics, new recording materials, lubricants that can withstand extremely high temperatures, and new approaches to the recording channel design. This paper surveys the challenges for this technology and the progress that has been made in addressing them.