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Yunosuke Makita
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 184
Citations - 2099
Yunosuke Makita is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Photoluminescence & Molecular beam epitaxy. The author has an hindex of 25, co-authored 184 publications receiving 2059 citations.
Papers
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A thin-film solar cell of high-quality β-FeSi2/Si heterojunction prepared by sputtering
Zhengxin Liu,Shinan Wang,Naotaka Otogawa,Yasuhito Suzuki,Masato Osamura,Yasuhiro Fukuzawa,Teruhisa Ootsuka,Yasuhiko Nakayama,Hisao Tanoue,Yunosuke Makita +9 more
TL;DR: In this paper, a thin-film solar cell was fabricated by depositing n- β -FeSi2 on p-Si (1 1/1/1) substrate at low temperature.
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Optical absorption and photoluminescence studies of β‐FeSi2 prepared by heavy implantation of Fe+ ions into Si
H. Katsumata,H. Katsumata,Yunosuke Makita,Naoto Kobayashi,Hajime Shibata,Masataka Hasegawa,Igor Aksenov,Shinji Kimura,Akira Obara,Shin Ichiro Uekusa +9 more
TL;DR: In this paper, mass-separated 56Fe+ ions were implanted into Si(100) at 350°C using three different energies and doses of 140 keV (1.32×1017 cm−2), 80 keV(6.20×1016 cm −2), and 50 keV
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Studies on aluminum-doped ZnO films for transparent electrode and antireflection coating of β-FeSi2 optoelectronic devices
Teruhisa Ootsuka,Zhengxin Liu,Masato Osamura,Yasuhiro Fukuzawa,Ryo Kuroda,Yasuhito Suzuki,Naotaka Otogawa,Takahiro Mise,Shinan Wang,Yasushi Hoshino,Yasuhiko Nakayama,Hisao Tanoue,Yunosuke Makita +12 more
TL;DR: Al-doped ZnO (AZO) films were fabricated by sputtering on β-FeSi 2 thin films and were found suitable for both transparent electrodes and antireflection coating (ARC).
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Molecular beam epitaxial growth of low‐resistivity ZnSe films
TL;DR: In this paper, singlecrystalline films of low resistivity ZnSe have been successfully grown by molecular beam epitaxy (MBE) and the film shows good crystallinity, having a smooth and flat surface as revealed by RHEED and SEM investigations.
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Heteroepitaxy and characterization of CuInSe2 on GaAs(001)
Shigeru Niki,Yunosuke Makita,Akimasa Yamada,O. Hellman,Paul Fons,Akira Obara,Yoshitaka Okada,R. Shioda,Hiroyuki Oyanagi,T. Kurafuji,Shigefusa F. Chichibu,Hisayuki Nakanishi +11 more
TL;DR: In this paper, the authors grow CuInSe 2 (CIS) films on (001)-oriented GaAs substrates by molecular beam epitaxy at substrate temperatures of T s = 350-550° C.