Nitrogen doping has been an effective way to tailor the properties of graphene and render its potential use for various applications. Three common bonding configurations are normally obtained when doping nitrogen into the graphene: pyridinic N, pyrrolic N, and graphitic N. This paper reviews nitrogen-doped graphene, including various synthesis methods to introduce N doping and various characterization techniques for the examination of various N bonding configurations. Potential applications of N-graphene are also reviewed on the basis of experimental and theoretical studies.

https://s3-eu-west-1.amazonaws.com/pfigshare-u-files/1431849/NitrogenReviewonRecentProgressinNitrogenDopedGrapheneSynthesisCharacterizationandItsPotentialApplications.pdf

Review on Recent Progress in Nitrogen-Doped Graphene: Synthesis, Characterization, and Its Potential Applications

Graphene has emerged as a subject of enormous scientific interest due to its exceptional electron transport, mechanical properties, and high surface area. When incorporated appropriately, these atomically thin carbon sheets can significantly improve physical properties of host polymers at extremely small loading. We first review production routes to exfoliated graphite with an emphasis on top-down strategies starting from graphite oxide, including advantages and disadvantages of each method. Then solvent- and melt-based strategies to disperse chemically or thermally reduced graphene oxide in polymers are discussed. Analytical techniques for characterizing particle dimensions, surface characteristics, and dispersion in matrix polymers are also introduced. We summarize electrical, thermal, mechanical, and gas barrier properties of the graphene/polymer nanocomposites. We conclude this review listing current challenges associated with processing and scalability of graphene composites and future perspectives f...

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Graphene/Polymer Nanocomposites

Since the discovery of highly conducting polyacetylene by Shirakawa, MacDiarmid, and Heeger in 1977, π-conjugated systems have attracted much attention as futuristic materials for the development and production of the next generation of electronics, that is, organic electronics. Conceptually, organic electronics are quite different from conventional inorganic solid state electronics because the structural versatility of organic semiconductors allows for the incorporation of functionality by molecular design. This versatility leads to a new era in the design of electronic devices. To date, the great number of π-conjugated semiconducting materials that have either been discovered or synthesized generate an exciting library of π-conjugated systems for use in organic electronics. 11 However, some key challenges for further advancement remain: the low mobility and stability of organic semiconductors, the lack of knowledge regarding structure property relationships for understanding the fundamental chemical aspects behind the structural design, and realization of desired properties. Organic field-effect transistors (OFETs) are a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals (drain, source, and gate electrodes). OFETs are not only essential building blocks for the next generation of cheap and flexible organic circuits, but they also provide an important insight into the charge transport of πconjugated systems. Therefore, they act as strong tools for the exploration of the structure property relationships of πconjugated systems, such as parameters of field-effect mobility (μ, the drift velocity of carriers under unit electric field), current on/off ratio (the ratio of the maximum on-state current to the minimum off-state current), and threshold voltage (the minimum gate voltage that is required to turn on the transistor). 17 Since the discovery of OFETs in the 1980s, they have attracted much attention. Research onOFETs includes the discovery, design, and synthesis of π-conjugated systems for OFETs, device optimization, development of applications in radio frequency identification (RFID) tags, flexible displays, electronic papers, sensors, and so forth. It is beyond the scope of this review to cover all aspects of π-conjugated systems; hence, our focus will be on the performance analysis of π-conjugated systems in OFETs. This should make it possible to extract information regarding the fundamental merit of semiconducting π-conjugated materials and capture what is needed for newmaterials and what is the synthesis orientation of newπ-conjugated systems. In fact, for a new science with many practical applications, the field of organic electronics is progressing extremely rapidly. For example, using “organic field effect transistor” or “organic field effect transistors” as the query keywords to search the Web of Science citation database, it is possible to show the distribution of papers over recent years as shown in Figure 1A. It is very clear

Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.

To realize graphene-based electronics, various types of graphene are required; thus, modulation of its electrical properties is of great importance. Theoretic studies show that intentional doping is a promising route for this goal, and the doped graphene might promise fascinating properties and widespread applications. However, there is no experimental example and electrical testing of the substitutionally doped graphene up to date. Here, we synthesize the N-doped graphene by a chemical vapor deposition (CVD) method. We find that most of them are few-layer graphene, although single-layer graphene can be occasionally detected. As doping accompanies with the recombination of carbon atoms into graphene in the CVD process, N atoms can be substitutionally doped into the graphene lattice, which is hard to realize by other synthetic methods. Electrical measurements show that the N-doped graphene exhibits an n-type behavior, indicating substitutional doping can effectively modulate the electrical properties of graphene. Our finding provides a new experimental instance of graphene and would promote the research and applications of graphene.

Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Patterned Graphene as Source/Drain Electrodes for Bottom-Contact Organic Field-Effect Transistors†

Multibit Storage of Organic Thin‐Film Field‐Effect Transistors

[*] Prof. Y. Q. Liu, Y. G. Wen, Dr. C. A. Di, Dr. Y. Wang, Dr. X. N. Sun, Y. L. Guo, J. Zheng, W. P. Wu, S. H. Ye, Prof. G. Yu Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 (P.R. China) E-mail: liuyq@iccas.ac.cn Y. G. Wen, X. N. Sun, Y. L. Guo, J. Zheng, W. P. Wu, S. H. Ye Graduate School of Chinese Academy of Sciences Beijing 100039 (P.R. China)

Improvements in Stability and Performance of N, N′-Dialkyl Perylene Diimide-Based n-Type Thin-Film Transistors

Single‐Crystal Microribbons of an Indolo[3,2‐b]carbazole Derivative by Solution‐Phase Self‐Assembly with Novel Mechanical, Electrical, and Optical Properties

Yunqi Liu

Papers

Patterned Graphene as Source/Drain Electrodes for Bottom-Contact Organic Field-Effect Transistors†

Multibit Storage of Organic Thin‐Film Field‐Effect Transistors

Improvements in Stability and Performance of N, N′-Dialkyl Perylene Diimide-Based n-Type Thin-Film Transistors

Single‐Crystal Microribbons of an Indolo[3,2‐b]carbazole Derivative by Solution‐Phase Self‐Assembly with Novel Mechanical, Electrical, and Optical Properties

A Facile, Low-Cost, and Scalable Method of Selective Etching of Semiconducting Single-Walled Carbon Nanotubes by a Gas Reaction