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Yvan Bonnassieux
Researcher at École Polytechnique
Publications - 133
Citations - 3049
Yvan Bonnassieux is an academic researcher from École Polytechnique. The author has contributed to research in topics: Perovskite (structure) & Thin film. The author has an hindex of 25, co-authored 127 publications receiving 2397 citations. Previous affiliations of Yvan Bonnassieux include University of Rennes & École normale supérieure de Cachan.
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Journal ArticleDOI
Anharmonicity and Disorder in the Black Phases of Cesium Lead Iodide Used for Stable Inorganic Perovskite Solar Cells
Arthur Marronnier,Guido Roma,Soline Boyer-Richard,Laurent Pedesseau,Jean-Marc Jancu,Yvan Bonnassieux,Claudine Katan,Constantinos C. Stoumpos,Mercouri G. Kanatzidis,Jacky Even +9 more
TL;DR: It is shown through high-resolution in situ synchrotron XRD measurements that CsPbI3 can be undercooled below its transition temperature and temporarily maintained in its perovskite structure down to room temperature, stabilizing a metastable perovkite polytype (black γ-phase) crucial for photovoltaic applications.
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Structural Instabilities Related to Highly Anharmonic Phonons in Halide Perovskites.
TL;DR: Strong anharmonic effects and a double-well phonon instability at the center of the Brillouin zone for both cubic and orthorhombic phases of inorganic CsPbI3 are revealed and could help better understand the electrical transport properties in these materials.
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Piezoelectric actuators and sensors location for active control of flexible structures
TL;DR: A method for optimal positioning of piezoelectric actuators and sensors on a flexible structure and an energy based approach is developed, which leads quite naturally to the study of controllability and observability properties of the overall dynamical model.
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Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength
Chang-Hyun Kim,Omid Yaghmazadeh,Denis Tondelier,Yong Bin Jeong,Yvan Bonnassieux,Gilles Horowitz +5 more
TL;DR: In this paper, the capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure, and the analysis of the data in both the reverse and forward bias regime led to electrical methods for quantifying dielectric properties of Pentacene.
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Highly reproducible, hysteresis-free, flexible strain sensors by inkjet printing of carbon nanotubes
Fulvio Michelis,Fulvio Michelis,Laurence Bodelot,Yvan Bonnassieux,Bérengère Lebental,Bérengère Lebental +5 more
TL;DR: In this paper, the reproducibility of the sensitivity, the most critical parameter for sensing application, has been only marginally assessed for carbon nanotube networks (CNNs) based resistive strain sensors fabricated by inkjet-printing on flexible Ethylene Tetrafluoroethylethylene (EFTE) sheets.