Y
Yves Campidelli
Researcher at STMicroelectronics
Publications - 92
Citations - 1384
Yves Campidelli is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Silicon & Epitaxy. The author has an hindex of 20, co-authored 92 publications receiving 1355 citations. Previous affiliations of Yves Campidelli include Orange S.A. & French Alternative Energies and Atomic Energy Commission.
Papers
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Journal ArticleDOI
Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices
Takeshi Akatsu,Chrystel Deguet,L. Sanchez,Frederic Allibert,Denis Rouchon,Thomas Signamarcheix,C. Richtarch,Alice Boussagol,Virginie Loup,Frédéric Mazen,Jean-Michel Hartmann,Yves Campidelli,Laurent Clavelier,Fabrice Letertre,N. Kernevez,Carlos Mazure +15 more
TL;DR: In this article, the Smart Cut™ layer transfer technology is found to be the best method to form wafer-level GeOI structures of different diameters and thickness range down to
Journal ArticleDOI
Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations
TL;DR: In this article, the etch of silicon, SiGe and germanium layers with gaseous HCl in reduced pressure-chemical vapour deposition (RP-CVD) was studied.
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Fabrication and structure of epitaxial Er silicide films on (111) Si
TL;DR: In this paper, Er silicide films were prepared on (111) Si by deposition of Er and contact reaction at 380 °C or vacuum codeposition of er and Si maintaining the flux ratio close to 1:2.
Patent
Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained
TL;DR: In this paper, the authors proposed a method for stabilizing the monocrystalline silicon substrate temperature at a first predetermined temperature T 1 of 400 to 500° C, and chemical vapour deposition (CVD) of germanium at a second predetermined temperature t 2 of 750 to 850° C until the desired final thickness for the mon-stalline Germanium final layer is obtained.
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Infrared response of Pt/Si/ErSi1.7 heterostructure: Tunable internal photoemission sensor
TL;DR: In this paper, the photoresponse of a metal-Si-metal heterostructure was investigated using the Pt/Si/ErSi1.7 system, where the cutoff wavelength was shifted from 1.4 μm to above 5 μm and the quantum efficiency was increased up to 5% at 1.2 μm wavelength.