Author
Yves Mancuso
Bio: Yves Mancuso is an academic researcher. The author has contributed to research in topics: Thermal resistance & Thermal grease. The author has an hindex of 1, co-authored 2 publications receiving 24 citations.
Papers
More filters
••
TL;DR: In this article, a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave was presented.
Abstract: Performance and reliability of wide bandgap high-power amplifiers are correlated with their thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real operating conditions. As a direct temperature measurement within a channel is most of the time not achievable, the common approach is to measure the device temperature at different locations close to the hotspot and then to use simulations to estimate the channel temperature. This paper describes a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave. Infrared thermography, charge-coupled device-based thermoreflectance microscopy, and micro-Raman spectroscopy have been performed to extract the thermal resistance of the components. Results have been compared with simulations using a 3-D finite-element model to estimate the operating channel temperature. Measurements have shown that the RF-biased thermal resistance and the dc-biased thermal resistance of GaN HEMTs are similar.
34 citations
•
01 Sep 2012
TL;DR: In this article, the technical requirements are key input parameters to develop the technologies and materials that would be necessary for the packaging and thermal management of high power RF modules used in Active Electronically Scanned Array based on GaN transistors.
Abstract: In the framework of the Smartpower project, the technical requirements are key input parameters to develop the technologies and materials that would be necessary for the packaging and thermal management of high power RF modules used in Active Electronically Scanned Array based on GaN transistors. These essential requirements are linked to the very demanding environment constraints for airborne applications and the necessities linked to an optimal electrical RF performance for the packaging. The major mechanical and thermal architecture requirements of a liquid cooled antenna are provided to detail the main characteristics expected from a highly conductive Thermal Interface Material which has to be developed and also the geometrical requirements expected from a low-cost compact packaging which should include industrial constraints for manufacturing. Thermal management requirements linked to the integration of a thermal sensor into the packaging are explained in parallel to the management of power dissipation coming from a GaN high power amplifier. The outcome of the technologies developed by the partners of the consortium will be integrated into a demonstrator that is presented.
Cited by
More filters
••
TL;DR: In this paper, the authors review the use of Raman thermography to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution.
Abstract: We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs-based high electron mobility transistors and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.
82 citations
••
TL;DR: In this paper, the transient temperature rise and thermal time constant spectrum of GaN HEMTs via time-resolved micro-Raman thermometry with a temporal resolution of 30 ns were measured.
Abstract: Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for realizing next generation high-power RF amplifiers and high-efficiency power converters. However, elevated channel temperatures due to self-heating often severely limit their power handling capability. Although the steady-state thermal behavior of GaN HEMTs has been studied extensively, significantly fewer studies have considered their transient thermal response. In this paper, we report a methodology for measuring the transient temperature rise and thermal time constant spectrum of GaN HEMTs via time-resolved micro-Raman thermometry with a temporal resolution of 30 ns. We measured a broad spectrum of time constants from $\approx 130$ ns to $\approx 3.2$ ms that contribute to the temperature rise of an ungated GaN-on-SiC HEMT due to aggressive, multidimensional heat spreading in the die and die-attach. Our findings confirm previous theoretical analysis showing that one or two thermal time constants cannot adequately describe the transient temperature rise and that the temperature reaches steady-state at $\approx {16}L^{{2}}/\pi ^{{2}}\alpha $ , where $L$ and ${\alpha }$ are the thickness and thermal diffusivity of the substrate. This paper provides a practical methodology for validating transient thermal models of GaN HEMTs and for obtaining experimental values of the thermal resistances and capacitances for compact electrothermal modeling.
49 citations
••
TL;DR: In this article, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors under various bias conditions.
Abstract: In this paper, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors. Raman thermometry has been used to verify GRT by comparing the channel temperatures measured by both techniques under various bias conditions. To further validate this technique, a thermal finite-element model has been developed to model the heat dissipation throughout the devices. Comparisons show that the GRT method averages the temperature over the gate width, yielding a slightly lower peak temperature than Raman thermography. Overall, this method provides a fast and simple technique to determine the average temperature under both steady-state and pulsed bias conditions.
40 citations
••
TL;DR: In this article, the authors used transient thermoreflectance imaging (TTI) to measure the temperature rise of the passivated gate metal measured by TTI and the averaged gate temperature monitored by gate resistance thermometry (GRT).
Abstract: The development of steady-state thermal characterization techniques for AlGaN/GaN high-electron mobility transistors (HEMTs) has been used to measure the device’s peak temperature under DC conditions. Despite these methods enabling the accurate quantification of the device’s effective thermal resistance and power density dependence, transient thermometry techniques are necessary to understand the nanoscale thermal transport within the active GaN layer where the highly localized joule heating occurs. One technique that has shown the ability to achieve this is transient thermoreflectance imaging (TTI). The accuracy of TTI is based on using the correct thermoreflectance coefficient. In the past, alternative techniques have been used to adjust the thermoreflectance coefficient to match the correct temperature rise in the device. This paper provides a new method to accurately determine the thermoreflectance coefficient of a given surface and is validated via an electrical method: gate resistance thermometry (GRT). Close agreement is shown between the temperature rise of the passivated gate metal measured by TTI and the averaged gate temperature monitored by GRT. Overall, TTI can now be used to thermally map GaN HEMTs under pulsed conditions providing simultaneously a submicrosecond temporal resolution and a submicrometer spatial resolution.
38 citations
••
TL;DR: In this article, the authors present a fundamental study of the transient thermal behavior of GaN HEMTs to aid in understanding the complex contributions of multidimensional thermal spreading, multiple epitaxial layers, multiple gate fingers, and thermal boundary resistance to the temperature rise.
Abstract: Due to the high dissipated power densities present in GaN high-electron-mobility transistors (HEMTs) in high-power radio frequency applications, thermal analysis and thermal management of these devices are important in achieving their full potential. In this paper, we present a fundamental study of the transient thermal behavior of GaN HEMTs to aid in understanding the complex contributions of multidimensional thermal spreading, multiple epitaxial layers, multiple gate fingers, and thermal boundary resistance to the temperature rise. This complex behavior cannot be accurately described by one or two thermal time constants. Rather, a broad spectrum of time constants from ~1 ns up to several milliseconds are present in the device due to aggressive multidimensional thermal spreading from the narrow region of power dissipation next to each HEMT gate through the substrate, die attach, and package. In order to accurately model the temperature response, at least one time constant per decade over the timescale of interest is required. These findings are crucial in developing an intuitive understanding of the transient thermal behavior of GaN HEMTs and properly accounting for transient temperature rise in electrothermal modeling of high-power GaN-based amplifiers.
24 citations