THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

The Design and Analysis of Experiments

Handbook of Radioactivity Analysis

In this paper, a dielectric-pocket double-gate MOSFET is described for low-voltage low-power applications. A complete drain current model has been developed including the channel length modulation effect. The analytical results have been validated by comparing them with the simulation results using the ATLAS 3-D device simulator. This paper analyzes the impact of dielectric pillars on large-signal performance metrics in terms of linearity and digital performance. Due to high Ion/Ioff ratio, device gain, and extremely low value of intrinsic delay and power dissipation, the proposed design is a suitable candidate for low-voltage low-power digital and analog applications.

Two-Dimensional Analytical Drain Current Model for Double-Gate MOSFET Incorporating Dielectric Pocket

Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from -50 to 200/spl deg/C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain-body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical <110> pillar sidewalls and the horizontal <100> wafer surface.

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs

Microwave Semiconductor Devices

We have analyzed and discussed the issues arising in the design of Silicon — on — Insulator (SOI) wavelength filters with different types of device geometry. Microring and microdisk geometries have been chosen as the device configurations and in order to demonstrate the device performance and potential, Free Spectral Range (FSR), and Q-factor values are computed. Studies of the transmittance characteristics are carried out using Finite-Difference Time-Domain (FDTD) methods by RSOFT Software. Results show that the microring-based wavelength filter has a FSR of 1.4 THz and a Q-factor value of 486. On the other hand, the microdisk based filter has a broader FSR with slightly smaller Q-factor.

Impact of coupled resonator geometry on silicon-on insulator wavelength filter characteristics

In this paper, a new approach in predicting the hardness of Titanium Aluminum Nitrite (TiAlN) coatings using hybrid RSM-fuzzy model is implemented. TiAlN coatings are usually used in high-speed machining due to its excellent surface hardness and wear resistance. The TiAlN coatings were produced using Physical Vapor Deposition (PVD) magnetron sputtering process. A statistical design of experiment called Response Surface Methodology (RSM) was used in collecting optimized data. The fuzzy rules were constructed using actual experimental data. Meanwhile, the hardness values were generated using the RSM hardness model. Triangular shape of membership functions were used for inputs as well as output. The substrate sputtering power, bias voltage and temperature were selected as the input parameters and the coating hardness as an output of the process. The results of hybrid RSM-fuzzy model were compared against the experimental result and fuzzy single model based on the percentage error, mean square error (MSE), co-efficient determination (R2) and model accuracy. The result indicated that the hybrid RSM-fuzzy model obtained the better result compared to the fuzzy single model. The hybrid model with seven triangular membership functions gave an excellent result with respective average percentage error, MSE, R2 and model accuracy were 11.5%, 1.09, 0.989 and 88.49%. The good performance of the hybrid model showed that the RSM hardness model could be embedded in fuzzy rule-based model to assist in generating more fuzzy rules in order to obtain better prediction result.

Hybrid RSM-fuzzy modeling for hardness prediction of TiAlN coatings

This paper presents an aligned epipolar line for stereo images with analysis of multiple size region of interest in selected area or segment of depth maps in application of computer vision. Epipolar line works as a reference line for two same views of images during the process of pixel matching. Then the depth maps (disparity mapping) could be produced with almost similar position to each other. The mapping is about to deal with the intensities of pixels which allocate the depths of an image and can be extracted to get the distance values. This region is a reference view of the stereo camera and stereo vision baseline is based on horizontal configuration. The block matching technique is briefly described with the performance of its output. The disparity mapping is generated by the algorithm with the reference to the left image coordinate. The algorithm uses Sum of Absolute Differences (SAD) which is developed using Matlab software. The rectification and block matching processes are also briefly described in this paper.

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An Aligned Epipolar Line for Stereo Images with Multiple Sizes ROI in Depth Maps for Computer Vision Application

Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation

The vertical MOSFET is considered as an alternative to nanoscale device structure, due to relaxed-dependence on lithography and easier double gate realization. In this paper, the influence of body doping concentration variation in vertical MOSFET developed using oblique-rotating implantation (ORI) method is investigated. For this purpose, two-dimensional process simulation was made using TCAD tools for several N sub , namely 1, 4, 7 ad 10.1018 cm−3, respectively. The electrical characteristic and short channel effect i.e. DIBL and subthreshold swing, for different body doping were deliberated. The result also suggests the required change in the pillar design in maintaining the gate channel.

Z. A. F. M. Napiah

Papers

Impact of coupled resonator geometry on silicon-on insulator wavelength filter characteristics

Hybrid RSM-fuzzy modeling for hardness prediction of TiAlN coatings

An Aligned Epipolar Line for Stereo Images with Multiple Sizes ROI in Depth Maps for Computer Vision Application

Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation

Body doping influence in vertical MOSFET design