The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors

http://nathan.instras.com/documentDB/paper-69.pdf

Porous silicon: a quantum sponge structure for silicon based optoelectronics

https://hal.archives-ouvertes.fr/hal-00120432/document

Raman Spectroscopy of Nanomaterials: How Spectra Relate to Disorder, Particle Size and Mechanical Properties

Nanostructured oxides in chemistry: characterization and properties.

Two-dimensional (2D) transition metal dichalcogenide (TMD) nanosheets exhibit remarkable electronic and optical properties. The 2D features, sizable bandgaps and recent advances in the synthesis, characterization and device fabrication of the representative MoS2, WS2, WSe2 and MoSe2 TMDs make TMDs very attractive in nanoelectronics and optoelectronics. Similar to graphite and graphene, the atoms within each layer in 2D TMDs are joined together by covalent bonds, while van der Waals interactions keep the layers together. This makes the physical and chemical properties of 2D TMDs layer-dependent. In this review, we discuss the basic lattice vibrations of 2D TMDs from monolayer, multilayer to bulk material, including high-frequency optical phonons, interlayer shear and layer breathing phonons, the Raman selection rule, layer-number evolution of phonons, multiple phonon replica and phonons at the edge of the Brillouin zone. The extensive capabilities of Raman spectroscopy in investigating the properties of TMDs are discussed, such as interlayer coupling, spin–orbit splitting and external perturbations. The interlayer vibrational modes are used in rapid and substrate-free characterization of the layer number of multilayer TMDs and in probing interface coupling in TMD heterostructures. The success of Raman spectroscopy in investigating TMD nanosheets paves the way for experiments on other 2D crystals and related van der Waals heterostructures.

Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

The one phonon Raman spectrum in microcrystalline silicon

The red shift and the broadening of the Raman signal from microcrystalline silicon films is described in terms of a relaxation in the q-vector selection rule for the excitation of the Raman active optical phonons. The relationship between width and shift calculated from the known dispersion relation in c-Si is in good agreement with available data. An increase in the decay rate of the optical phonons predicted on the basis of the same model is confirmed experimentally.

The one phonon raman spectrum in microcrystalline silicon

Use of CT-based renal volumetry for the measurement of split renal function: a split glomerular filtration rate prediction model based on unilateral renal volume parameters.

Z. P. Wang

Papers

The one phonon Raman spectrum in microcrystalline silicon

The one phonon raman spectrum in microcrystalline silicon

Use of CT-based renal volumetry for the measurement of split renal function: a split glomerular filtration rate prediction model based on unilateral renal volume parameters.