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Zeev Wurman

Bio: Zeev Wurman is an academic researcher. The author has contributed to research in topics: Layer (electronics) & Transistor. The author has an hindex of 12, co-authored 28 publications receiving 1263 citations.

Papers
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Patent
05 Oct 2001
TL;DR: In this article, a customizable logic array including an array of programmable cells having a multiplicity of inputs and amultiplicity of outputs and customized interconnections providing permanent direct interconnection among at least a plurality of the multiplicity inputs and at least the plurality of outputs was described.
Abstract: This invention discloses a customizable logic array including an array of programmable cells having a multiplicity of inputs and a multiplicity of outputs; and customized interconnections providing permanent direct interconnections among at least a plurality of the multiplicity of inputs and at least a plurality of the multiplicity of outputs.

425 citations

Patent
19 Aug 2010
TL;DR: In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.
Abstract: A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

417 citations

Patent
20 Sep 2012
TL;DR: In this paper, a 3D IC based system including a first semiconductor layer including first alignment marks and first transistors, wherein the first transistor are interconnected by at least one metal layer including aluminum or copper, is presented.
Abstract: A 3D IC based system including: a first semiconductor layer including first alignment marks and first transistors, wherein the first transistors are interconnected by at least one metal layer including aluminum or copper; a second mono-crystallized semiconductor layer including second transistors and overlaying the at least one metal layer, wherein the at least one metal layer is in-between the first semiconductor layer and the second mono-crystallized semiconductor layer; and wherein the second transistors include a plurality of N-type transistors and P-type transistors, and wherein the second mono-crystallized semiconductor layer is transferred from a reusable donor wafer.

70 citations

Patent
22 Nov 2010
TL;DR: In this paper, an integrated circuit including a first layer of logic circuits, and a second layer with logic circuits overlaying the first layer, where each flip-flop has at least one connection to the second layer, is described.
Abstract: An integrated circuit including a first layer of logic circuits, and a second layer of logic circuits overlaying the first layer, wherein the first layer includes a multiplicity of flip-flops wherein each of the flip-flops has at least one connection to the second layer, and wherein the second layer includes at least one logic circuit with inputs including the connection and with at least one output connected to the first layer.

70 citations

Patent
07 Nov 2010
TL;DR: In this paper, a semiconductor device comprising first layer comprising multiplicity of first transistors and second layer consisting multiplicityof second transistors is defined, and at least one function constructed by the first transistor is structure so it could be replaced by a function created by the second transistor.
Abstract: A semiconductor device comprising first layer comprising multiplicity of first transistors and, second layer comprising multiplicity of second transistors and, at least one function constructed by the first transistors are structure so it could be replaced by a function constructed by the second transistors.

48 citations


Cited by
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Patent
19 Aug 2010
TL;DR: In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.
Abstract: A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

417 citations

Patent
28 Jun 2011
TL;DR: In this paper, a first layer and a second layer of layer-transferred mono-crystallized silicon, where the first layer comprises a first plurality of horizontally-oriented transistors, and the second layer includes a second plurality of vertically oriented transistors.
Abstract: A device comprising semiconductor memories, the device comprising: a first layer and a second layer of layer-transferred mono-crystallized silicon, wherein the first layer comprises a first plurality of horizontally-oriented transistors; wherein the second layer comprises a second plurality of horizontally-oriented transistors; and wherein the second plurality of horizontally-oriented transistors overlays the first plurality of horizontally-oriented transistors.

413 citations

Patent
28 Mar 2011
TL;DR: In this article, a method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a metal layer overlaying the first layer and providing at least one connection to the first Transistors, and finally processing a second layer of second transistors overlaying a first metal layer, wherein the second metal layer is connected to provide power to at least 1 of the second Transistors.
Abstract: A method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a first metal layer overlaying the first transistors and providing at least one connection to the first transistors, then processing a second metal layer overlaying the first metal layer, then processing a second layer of second transistors overlaying the second metal layer, wherein the second metal layer is connected to provide power to at least one of the second transistors.

351 citations

Proceedings ArticleDOI
02 Jun 2003
TL;DR: Some of the trade-offs to consider for determination of how much regularity a particular IC or application can afford are discussed, and a Via Patterned Gate Array is proposed as one such example.
Abstract: While advances in semiconductor technologies have pushed achievable scale and performance to phenomenal limits for ICs, nanoscale physical realities dictate IC production based on what we can afford. We believe that IC design and manufacturing can be made more affordable, and reliable, by removing some design and implementation flexibility and enforcing new forms of design regularity. This paper discusses some of the trade-offs to consider for determination of how much regularity a particular IC or application can afford. A Via Patterned Gate Array is proposed as one such example that trades performance for cost by way of new forms of design regularity.

268 citations

Patent
25 Jul 2005
TL;DR: A configurable logic array may include: a multiplicity of logic cells, containing look-up tables; customizable metal and via connection layers overlaying the multiplicity, where the customizations are all done on a single via layer.
Abstract: A configurable logic array may include: a multiplicity of logic cells, containing look-up tables; customizable metal and via connection layers overlaying the multiplicity of logic cells; a multiplicity of device customizable I/O cells; a multiplicity of configuration customizable RAM blocks; a ROM block with customizable contents; and a microprocessor with customizable I/O for configuring and testing the array, where the customizations are all done on a single via layer.

263 citations