Zero-Dimensional Semiconductors

Bio: Zero-Dimensional Semiconductors is an academic researcher. The author has an hindex of 1, co-authored 1 publications receiving 104 citations.

Science and engineering of one- and zero-dimensional semiconductors

Abstract: This volume comprises the proceedings of the NATO Advanced Research Workshop on the Science and Engineering of 1- and O-dimensional semiconductors held at the University of Cadiz from 29th March to 1st April 1989, under the auspices of the NATO International Scientific Exchange Program. There is a wealth of scientific activity on the properties of two-dimensional semiconductors arising largely from the ease with which such structures can now be grown by precision epitaxy techniques or created by inversion at the silicon-silicon dioxide interface. Only recently, however, has there burgeoned an interest in the properties of structures in which carriers are further confined with only one or, in the extreme, zero degrees of freedom. This workshop was one of the first meetings to concentrate almost exclusively on this subject: that the attendance of some forty researchers only represented the community of researchers in the field testifies to its rapid expansion, which has arisen from the increasing availability of technologies for fabricating structures with small enough (sub - O. I/tm) dimensions. Part I of this volume is a short section on important topics in nanofabrication. It should not be assumed from the brevity of this section that there is little new to be said on this issue: rather that to have done justice to it would have diverted attention from the main purpose of the meeting which was to highlight experimental and theoretical research on the structures themselves.

Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots

Abstract: Large energy shifts in the luminescence emission from strained InGaAs quantum dots are observed as a result of postgrowth annealing and also when raising the upper cladding layer growth temperatures. These blueshifts occur concurrently with narrowing (from 61 to 24 meV) of the full width at half‐maxima for the emission from the quantum dot ensemble. These energy shifts can be explained by interdiffusion or intermixing of the interfaces rather than strain effects due to variations in capping layer thickness. Temperature behavior of the luminescence in annealed and nonannealed samples indicates a change in the shape and depth of the quantum dot confining potential. Quenching of the wetting layer luminescence after interdiffusion is also observed.