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Zhang Xiaoshan

Bio: Zhang Xiaoshan is an academic researcher from Sichuan University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 3, co-authored 4 publications receiving 15 citations.

Papers
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Journal ArticleDOI
TL;DR: In this paper, an ultrahigh energy storage density (W) was achieved in the Ba0.3Sr0.7Zr 0.18Ti0.82O3 (BSZT) relaxor ferroelectric thin films with the help of an ultrathin Ca0.8O1.8 (CSZ) artificial dead layer.

33 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated the buffer dependence of the microstructure and electrical properties of the Mn/Y co-doped Ba0.67Sr0.33TiO3 films with different double buffers.
Abstract: Mn/Y co-doped Ba0.67Sr0.33TiO3 films with different double buffers were prepared by radio-frequency magnetron sputtering. The buffer dependence of the microstructure and electrical properties of the films was investigated. The results show that the thin films deposited on STO/LNO/Pt (111) and LNO/Pt (111) substrates present better crystallization and the film on STO/LNO/Pt (111) exhibit the growth of (100) textured characteristic. The films grown on LaNiO3 layer show a stronger dielectric response, while the insertion of STO layer improves dielectric loss and leakage current. STO/LNO Co-buffer is beneficial to the comprehensive electrical properties of the Mn/Y co-doped BST thin film.

4 citations

Patent
22 May 2013
TL;DR: In this paper, a non-refrigerating film infrared focal plane array detector structure consisting of a first substrate with reading circuits, and a second substrate with thermal isolation microbridge arrays and sensitive element arrays is described.
Abstract: A non-refrigerating film infrared focal plane array detector structure comprises a first substrate provided with reading circuits, and a second substrate provided with thermal isolation microbridge arrays and sensitive element arrays. The first substrate and the second substrate are integrally bonded. The etched second substrate serves as a pier for each thermal isolation microbridge unit in the thermal isolation microbridge arrays, and a support layer tightly attached to the top of the pier serves as a deck. The deck of each thermal isolation microbridge unit is provided with one sensitive element array. Each sensitive element array is electrically connected with the corresponding reading circuit of the first substrate through a lead electrode. A production method of the non-refrigerating film infrared focal plane array detector structure includes: preparing a pattern on a bonding surface of the first substrate, preparing the support layer, preparing the sensitive element arrays, protecting the front side of the second substrate, preparing the thermal isolation microbridge arrays, bonding the first substrate and the second substrate, removing a front protective layer of the second substrate, and connecting electrodes of the sensitive element electrode reading circuits.

3 citations

Patent
08 May 2013
TL;DR: In this article, an etching solution for performing wet etching on a lanthanum nickelate film and a ferroelectric film/lanthanum Nickelate composite film is presented.
Abstract: The invention discloses an etching solution for performing wet etching on a lanthanum nickelate film and a ferroelectric film/lanthanum nickelate composite film. The etching solution is prepared from hydrogen peroxide, nitric acid, hydrofluoric acid and purified water, wherein a volume ratio of the purified water to hydrogen peroxide to nitric acid to hydrofluoric acid is 1:2-3:0.5-1.0:0.06-0.12. The method for preparing the etching solution comprises the following steps of: uniformly mixing metered purified water and hydrogen peroxide under normal temperature and normal pressure according to the formula, adding metered nitric acid, uniformly mixing, continuously adding metered hydrofluoric acid and uniformly mixing. According to the etching solution, the LNO film or LNO composite film on the surface of SiO2 and/or Pt can be cleanly and completely removed at a time, and an etching picture which is clear in edge and low in lateral erosion ratio is obtained.

Cited by
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Journal ArticleDOI
TL;DR: In this article, the authors investigated the energy storage performances of linear dielectric, relaxor ferroelectric, and antiferroelectric from the viewpoint of chemical modification, macro/microstructural design, and electrical property optimization.
Abstract: Dielectric ceramic capacitors, with the advantages of high power density, fast charge-discharge capability, excellent fatigue endurance, and good high temperature stability, have been acknowledged to be promising candidates for solid-state pulse power systems. This review investigates the energy storage performances of linear dielectric, relaxor ferroelectric, and antiferroelectric from the viewpoint of chemical modification, macro/microstructural design, and electrical property optimization. Research progress of ceramic bulks and films for Pb-based and/or Pb-free systems is summarized. Finally, we propose the perspectives on the development of energy storage ceramics for pulse power capacitors in the future.

109 citations

Journal ArticleDOI
TL;DR: In this paper, the recent developments of (anti)polar nanoregions with different possible local symmetries in various lead-free perovskite-structured dielectrics have been summarized in this review, together with the achieved energy-storage properties based on them.

49 citations

Journal ArticleDOI
TL;DR: In this article , the recent developments of (anti)polar nanoregions with different possible local symmetries in various lead-free perovskite-structured dielectrics have been summarized in this review, together with the achieved energy-storage properties based on them.

49 citations

Journal ArticleDOI
TL;DR: In this article, the authors summarized several control optimization mechanisms, such as heterojunction effect, interfacial dead-layer and space-charges effect, modulating the distribution of electric field and polarization, multilayer film interface design and interface blocking effects, and interlayer coupling, for multi-layer films.
Abstract: Dielectric capacitors, which have the characteristics of greater power density, have received extensive research attention due to their application prospects in pulsed power devices. Film capacitors are easier to integrate into circuits due to their smaller size and higher energy storage density compared to other dielectric capacitor devices. Recently, film capacitors have achieved excellent energy storage performance through a variety of methods and the preparation of multilayer films has become the main way to improve its energy storage performance. In this review, we have summarized several control optimization mechanisms, such as heterojunction effect, interfacial ‘dead-layer’ and space-charges effect, modulating the distribution of electric field and polarization, multilayer film interface design and interface blocking effects, and interlayer coupling, for multilayer films by recalling previous studies on multilayer films. The outlook and future research direction of multilayer films are also discussed in this article.

35 citations