Zhao Xing

Bio: Zhao Xing is an academic researcher. The author has contributed to research in topics: Nanorod & Nanosheet. The author has an hindex of 1, co-authored 4 publications receiving 5 citations.

Preparation method of silicon nanowire arrays easy in realizing large-area separation

Abstract: The invention discloses a preparation method of silicon nanowire arrays easy in realizing the large-area separation and belongs to the technical field of the nanometer material technology and application. According to the preparation method, silicon wafers are processed, and the silicon wafers with the clean and smooth surface are obtained; then, the silicon wafers are placed between two electrodes and are put into etching liquid together with the electrodes for etching reaction, and silicon nanowire arrays with different lengths are obtained; a transverse electric field which has the electric field intensity being 150 to 220V/cm and is vertical to the etching direction is added before 10 to 15 minutes of the etching completion until the reaction finishes; and finally, nitric acid is used for removing sliver remained in the silicon nanowire arrays, hydrofluoric acid is used for removing oxidation layers at the surface of the silicon wafers, and the silicon nanowire arrays easy in realizing the large-area separation are obtained. The preparation method has the advantages that the process is simple, the repeatability is good, the flexible and controlled effects are realized, and the cost is low; and the additional transverse electric field is introduced for the first time for preparing the silicon nanowire arrays easy in realizing the large-area separation, and the problems that the separation is difficult in the traditional silicon nanowire array transfer, and the length is not uniform after the transfer are solved.

Preparation method of ZnO nanorod material with surface finish

Abstract: The invention discloses a preparation method of a ZnO nanorod material with surface finish, belonging to the technical field of nanomaterials. According to the method, Zn(CH3COO)2 and urotropine conduct hydro-thermal reaction, the structure and morphology of the prepared ZnO nanorod material are even, and pits evenly distributed are used for conducting surface finish. A compound structure obtained by physically doping the material with P25 integrates the electronic linear transmission channel function of a ZnO nanorod, the specific surface area of a photoanode can be increased through the addition of the P25, the P25 can be well filled into pits on the surface of the zinc oxide nanorod, high electronic transmission efficiency and large dye adsorption capability can be ensured, the surface contact of two materials can be enhanced, and the interference compound of two structures can be reduced. Compared with the single zinc oxide nanorod, the ZnO nanorod material with surface finish is more beneficial to improvement on the open-circuit voltage and the short-circuit current of a DSSC (Dye Sensitized Solar Cell).

Method for preparing silicon nanowire array based on metal assisted chemical etching technique

Abstract: The present invention relates to a method for preparing a silicon nanowire array based on a metal-assisted chemical etching technique and belongs to the semiconductor nanomaterial preparation technical field According to the method of the invention, a mixed solution of hydrofluoric acid (HF) and silver nitrate (AgNO3) with a certain parameter, is prepared, and the solution is subjected to ultrasonic mixing for 3 to 5 minutes; a cleaned silicon wafer is arranged in the mixed solution, so that Ag particles can be deposited; and the silicon wafer is arranged in a mixed solution of hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with a certain parameter, and therefore, a length-controllable silicon nanowire array is prepared through using the principle that the mixed solution, the Ag particles and the silicon wafer can form a primary battery The method has the advantages of low cost, simple process and high production efficiency and the like With the method adopted, a simple and convenient approach is provided for the preparation of silicon nanowire solar batteries

Method for preparing silicon nanostructured material based on external electric field

Abstract: The invention discloses a method for preparing a silicon nanostructured material based on an external electric field. The method comprises the following steps: (1) putting a clean silicon wafer into a mixed solution of hydrofluoric acid and silver nitrate to deposit a layer of silver film on the surface of the silicon wafer; (2) immediately putting the coated silicon wafer from the step (1) into a corrosive liquid, wherein the corrosive liquid is contained in a container; a pair of noble electrodes are fixed to two sides of the container; and the noble electrodes are immersed in the corrosive liquid; and (3) immediately turning on a power supply of the noble electrodes after the step (2) and corroding for a period of time to obtain the silicon nanostructured material. Only by changing a single variable of electric field, corrosion path of catalyst granules can be controlled according to the method. The method is simple and easy to operate and is beneficial to large-scale production. In addition, applicability of the silicon nanostructured material in aspects of solar cells, lithium ion batteries, thermo-electric devices, precision sensors and the like is enhanced.

Method for growing porous tin dioxide nano-tubes on electric conduction substrate

Abstract: The invention discloses a method for preparing one-dimensional porous tin dioxide nano-tubes on an electric conduction substrate based on an in-situ self-etching template mechanism, and belongs to the field of inorganic chemistry and material synthesis. The method comprises: washing an electric conduction glass, preparing a ZnO precursor solution, growing a ZnO/electric conduction glass, preparing a SnO2 precursor solution, and growing SnO2 nano-tubes. According to the present invention, the method is characterized in that the two-step template method for preparing the SnO2 nano-tubes through the in-situ etching based on the self-produced alkaline environment without strong acid/alkali is achieved, the experimental steps are simplified, the product size is uniform, the cost is low, and the advantages of energy saving and environment protection are provided; and the method has the simple operation and provides the new idea for the large batch preparation of the SnO2 nano-tubes, and the prepared tin oxide has the large specific surface area and has wide application prospects in the fields of photocatalysis, solar cells, and the like.

Preparing method of micrometer silver ball

Abstract: The invention relates to a preparing method of a micrometer silver ball. The preparing method comprises the steps of 1, dissolving silver nitrate into an alcohol solvent to prepare 1-2 parts by volume of 0.1 mol/L-1 mol/L solutions for standby application; dissolving modified polyester into the same alcohol solvent to prepare 2-4 parts by volume of 0.05 mol/L-2 mol/L solutions; raising temperature to 100-300 DEG C and stirring for 0.5-24 hours, adding 0.1 mmol-1 mmol chloride solution, dropwise adding a silver nitrate solution into the reaction after evenly stirring, and stopping heating after stirring and reacting for 0.5-24 hours; 2,diluting a reacting mother solution with water and ethyl alcohol after cooling the reacting solution obtained in the step 1, conducting centrifugation, collecting sediment, and dispersing the sediment with ethyl alcohol, so that the micrometer silver ball is prepared.

Method for manufacturing blazed grating through using electric fields to control hole distribution

Abstract: The invention discloses a method for manufacturing a blazed grating through using electric fields to control hole distribution. The method comprises the following steps that: (1) immersing hydrophilic treatment is performed on a silicon wafer, and then, the silicon wafer is washed, blown and dried, organic matters left on the surface of the silicon wafer are removed, adhesive uniformizing, development, sputtering and stripping semiconductor processing are performed, a patterned metal thin film is obtained, an etching solution is prepared, the blazed grating is prepared in a water bath; and (2) the size of the blazing angle of the blazed grating is controlled through adjusting an angle between two electric field pole plates, and the distribution gradient of holes in the silicon wafer is controlled by changing electric field strength, and a toothed groove is obtained by alternately using two electric fields. The method of the invention has the advantages of precise control, low cost, simple process, high economical efficiency and short preparation period.