Z
Zhaohui Zhong
Researcher at University of Michigan
Publications - 83
Citations - 9615
Zhaohui Zhong is an academic researcher from University of Michigan. The author has contributed to research in topics: Graphene & Carbon nanotube. The author has an hindex of 33, co-authored 82 publications receiving 8956 citations. Previous affiliations of Zhaohui Zhong include Cornell University & Nanjing University.
Papers
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Journal ArticleDOI
High Performance Silicon Nanowire Field Effect Transistors
TL;DR: In this article, the influence of source-drain contact thermal annealing and surface passivation on key transistor properties was examined, and it was shown that thermal annaling and passivation of oxide defects using chemical modification can increase the average transconductance from 45 to 800 nS and average mobility from 30 to 560 cm 2 /V
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Graphene photodetectors with ultra-broadband and high responsivity at room temperature
TL;DR: An ultra-broadband photodetector design based on a graphene double-layer heterostructure is reported, demonstrating room-temperaturePhotodetection from the visible to the mid-infrared range, with mid- Infrared responsivity higher than 1 A W(-1), as required by most applications.
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Nanowire Crossbar Arrays as Address Decoders for Integrated Nanosystems
TL;DR: A general approach for addressing based on molecular-level modification of crossed semiconductor nanowire field-effect transistor (cNW-FET) arrays, where selective chemical modification of cross points in the arrays enables NW inputs to turn specific FET array elements on and off.
Patent
Nanoscale wires and related devices
Charles M. Lieber,Xiangfeng Duan,Yi Cui,Yu Huang,Mark S. Gudiksen,Lincoln J. Lauhon,Jiangfang Wang,Hongkun Park,Qingqiao Wei,Wenjie Liang,David C. Smith,Deli Wang,Zhaohui Zhong +12 more
TL;DR: In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.
Journal ArticleDOI
Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices
TL;DR: In this article, the p-type gallium nitride nanowires were synthesized using metal-catalyzed chemical vapor deposition (CVD) and were found to have single-crystal structures with a 〈0001〉 growth axis that is consistent with substrate epitaxy.