(IEEE Transactions on Electron Devices,36(12):2816-2820)Field-Drifting Resonant Tunneling Through a-Si:H/a-Sil-xCx:H Quantum Wells at Different Locations of the i-Layer of a p-i-n Structure

A concise and factual abstract is required. The abstract should be a single paragraph containing 100-150 words that briefly states the purpose of the research, the principal results and major conclusions. An abstract is often presented separate from the article, so it must be able to stand alone. For this reason, References should be avoided, but if essential, they must be cited in full, without reference to the reference list. Also, non-standard or uncommon abbreviations should be avoided, but if essential they must be defined at their first mention in the abstract itself. Graphical abstract Although a graphical abstract is optional, its use is encouraged as it draws more attention to the online article. The graphical abstract should summarize the contents of the article in a concise, pictorial form designed to capture the attention of a wide readership. Graphical abstracts should be submitted as a separate file in the online submission system. Image size: Please provide an image with a minimum of 531 × 1328 pixels (h × w) or proportionally more. The image should be readable at a size of 5 × 13 cm using a regular screen resolution of 96 dpi. Preferred file types: TIFF, EPS, PDF or MS Office files. You can view Example Graphical Abstracts on our information site. Authors can make use of Elsevier's Illustration Services to ensure the best presentation of their images and in accordance with all technical requirements. Highlights Highlights are mandatory for this journal. They consist of a short collection of bullet points that convey the core findings of the article and should be submitted in a separate editable file in the online submission system. Please use 'Highlights' in the file name and include 3 to 5 bullet points (maximum 85 characters, including spaces, per bullet point). You can view example Highlights on our information site.

Superlattices and microstructures

The k-means clustering algorithm is considered one of the most powerful and popular data mining algorithms in the research community. However, despite its popularity, the algorithm has certain limitations, including problems associated with random initialization of the centroids which leads to unexpected convergence. Additionally, such a clustering algorithm requires the number of clusters to be defined beforehand, which is responsible for different cluster shapes and outlier effects. A fundamental problem of the k-means algorithm is its inability to handle various data types. This paper provides a structured and synoptic overview of research conducted on the k-means algorithm to overcome such shortcomings. Variants of the k-means algorithms including their recent developments are discussed, where their effectiveness is investigated based on the experimental analysis of a variety of datasets. The detailed experimental analysis along with a thorough comparison among different k-means clustering algorithms differentiates our work compared to other existing survey papers. Furthermore, it outlines a clear and thorough understanding of the k-means algorithm along with its different research directions.

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The k-means Algorithm: A Comprehensive Survey and Performance Evaluation

The perovskite manganites with generic formula RE1?xAExMnO3 (RE = rare earth, AE = Ca, Sr, Ba and Pb) have drawn considerable attention, especially following the discovery of colossal magnetoresistance (CMR). The most fundamental property of these materials is strong correlation between structure, transport and magnetic properties. They exhibit extraordinary large magnetoresistance named CMR in the vicinity of the insulator?metal/paramagnetic?ferromagnetic transition at relatively large applied magnetic fields. However, for applied aspects, occurrence of significant CMR at low applied magnetic fields would be required. This review consists of two sections: in the first section we have extensively reviewed the salient features, e.g.?structure, phase diagram, double-exchange mechanism, Jahn?Teller effect, different types of ordering and phase separation of CMR manganites. The second is devoted to an overview of experimental results on CMR and related magnetotransport characteristics at low magnetic fields for various doped manganites having natural grain boundaries such as polycrystalline, nanocrystalline bulk and films, manganite-based composites and intrinsically layered manganites, and artificial grain boundaries such as bicrystal, step-edge and laser-patterned junctions. Some other potential magnetoresistive materials, e.g.?pyrochlores, chalcogenides, ruthenates, diluted magnetic semiconductors, magnetic tunnel junctions, nanocontacts etc, are also briefly dealt with. The review concludes with an overview of grain-boundary-induced low field magnetotransport behavior and prospects for possible applications.

https://iopscience.iop.org/article/10.1088/0953-8984/20/27/273201/pdf

Low field magnetotransport in manganites

The perovskite manganites of general formula RE_1-xAe_xMnO_3 (RE= rare earth,AE=Ca, Sr, Ba and Pb)have drawn considerable attention, especially following the discovery of colossal magnetoresistance (CMR). They exhibit extraordinary large magnetoresistance pronounced as CMR in the vicinity of insulator-metal/paramagnetic-ferromagnetic transition at a relatively large applied magnetic fields. However, for applied aspectes, occurence of significant CMR at low applied magnetic fields would be required. This review consists of of two sections: In the first section we have extensively reviewed the salient features e.g. structure, phase diagram, double exchange mechansim, Jahn Teller effect, different types of ordering and phase separation of CMR mangnaites. The second is devoted to an overview of experimental results on CMR and related magnetotransport characteristics at low magnetic fields for doped manganites such as polycrystalline La_0.67Ca_0.33MnO_3 films, Ag admixed La_0.67Ca_0.33MnO_3 films, polycrystalline (La_0.7Ca_0.2Ba_0.1MnO_3)and epitaxial (La_0.67Ca_0.33MnO_3) films on different substrates, nanophasic La_0.7Ca_0.3MnO_3, mangnaite-polymer composites (La_0.7Ba_0.2Sr_0.1MnO_3-PMMA and La_0.67Ca_0.33MnO_3-PMMA)and double layered polycrystalline (La_1.4Ca_1.6-xBa_xMn_2O_7) and films (La_1.4Ca_1.6Mn_2O_7). Some other potential magnetoresistive materials e.g. pyrochlores, chalcogenides, ruthenates, diluted magnetic semiconductors, magnetic tunnel junctions, nanocontacts etc have aslo been briefly dealt with. The review concludes with the summary of results for low field magnetotransport behaviour and prospectes for applications.

Low Field Magnetotransport in Manganites

A novel silicon-on-insulator (SOI) high-voltage device structure with double-sided trenches on the buried oxide layer (DT SOI) is proposed and its breakdown characteristics are investigated theoretically and experimentally in this letter. Theoretically, the charges implemented in the DTs, whose density changes with the drain voltage, increase the electric field in the buried layer and modulate the electric field in the drift region, which results in the enhancement of the breakdown voltage (BV). Experimentally, the BV of 730 V is obtained for the first time in SOI LDMOS with DT on 20-mum SOI layer and 1- mum buried oxide layer

A Novel 700-V SOI LDMOS With Double-Sided Trench

A new silicon-on-insulator (SOI) power MOSFET structure is proposed, in which buried oxide step structure (BOSS) is replaced by a buried oxide double step (BODS). Numerical simulations are performed to demonstrate that higher breakdown voltages are obtained resulting from a higher electric-field peak introduced near the BODS, and higher impurity concentration is depleted due to thin-film SOI than that in the conventional SOI and BOSS structure.

New thin-film power MOSFETs with a buried oxide double step structure

A high-voltage lateral double-diffusion MOSFET (LDMOS) with a charge-balanced surface low on-resistance path (CBSLOP) layer is proposed and experimentally demonstrated using a modified CMOS process. The CBSLOP layer can not only provide a low on-resistance path in the on-state but also keep the charge balance between the N and P pillars of a surface low on-resistance path in the off-state, which results in improved breakdown voltage (BV). The experimental results show that the CBSLOP-LDMOS with a drift length of 35 mum exhibits a BV of 500 V and specific on-resistance (R on, sp) of 96 mOmega ldr cm2, yielding to a power figure of merit (BV 2/ R on, sp) of 2.6 MW/cm2 . The excellent device performances, coupled with a CMOS-compatible fabrication process, make the proposed CBSLOP-LDMOS a promising candidate for smart power integrated circuit.

High-Voltage LDMOS With Charge-Balanced Surface Low On-Resistance Path Layer

A new SOI high voltage device structure with variable- k (permittivity) dielectric buried layer (VK SOI) is proposed in this paper. In this structure, the buried layer is made of two dielectrics, one of which is the low- k dielectric. The breakdown voltage is enhanced due to the modulation effect of the variable- k buried layer on the electric fields in the buried layer and drift region. An analytical model for the electric field and breakdown voltage in VK SOI is presented taking the modulation effect into account, from which the RESURF condition is derived. The dependences of the electric field distribution and breakdown voltage on the device parameters for VK SOI are investigated. Compared with the conventional SOI, the electric field of the buried layer and breakdown voltage of VK SOI with relative permittivity k I2  = 2 of the low- k dielectric are enhanced by 81% and 56%, respectively. The analytical results are in good agreement with those of 2D simulations. Finally, the proposed model and RESURF condition can be well applied to the conventional SOI and also extended to VT SOI (variable thickness buried layer SOI) devices.

A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer

Based on the continuity theorem of electric displacement including interface charges, the enhanced dielectric layer field (ENDIF) for silicon-on-insulator (SOI) high-voltage devices is proposed. The following three approaches for enhancing the dielectric layer electric field EI to increase the vertical breakdown voltage of a device VB,V are presented: 1) using a thin silicon layer with a high critical electric field ES,C ; 2) introducing a low-permittivity dielectric buried layer; and 3) implementing interface charges between the silicon and the dielectric layer. Considering the threshold energy of silicon epsivT, the formula of ES,C on silicon layer thickness tS is first obtained, which increases sharply with a decrease of tS, and reaches up to 141 V/mum at tS = 0.1 mum. Expressions for EI and VByV are given, which agree well with simulative and experimental results. Based on the ENDIF, the new device structures are given, and an EI value of 300 V/mum has been experimentally obtained for double-sided trench SOI. Moreover, several conventional SOI devices are explained well by ENDIF.

Zhaoji Li

Papers

A Novel 700-V SOI LDMOS With Double-Sided Trench

New thin-film power MOSFETs with a buried oxide double step structure

High-Voltage LDMOS With Charge-Balanced Surface Low On-Resistance Path Layer

A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer

Field Enhancement for Dielectric Layer of High-Voltage Devices on Silicon on Insulator