Z
Zhaosheng Li
Researcher at Nanjing University
Publications - 283
Citations - 18842
Zhaosheng Li is an academic researcher from Nanjing University. The author has contributed to research in topics: Photocatalysis & Water splitting. The author has an hindex of 56, co-authored 230 publications receiving 15941 citations. Previous affiliations of Zhaosheng Li include National Institute for Materials Science & Zhengzhou University.
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Photodegradation Performance of g-C3N4 Fabricated by Directly Heating Melamine
TL;DR: The results clearly indicate that the metal-free g-C(3)N(4) has good performance in photodegradation of organic pollutant.
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An orthophosphate semiconductor with photooxidation properties under visible-light irradiation
Zhiguo Yi,Jinhua Ye,Naoki Kikugawa,Tetsuya Kako,Shuxin Ouyang,Hilary Stuart-Williams,Hiu Yang,Junyu Cao,Wenjun Luo,Zhaosheng Li,Yun Liu,Raymond Withers +11 more
TL;DR: Ag(3)PO(4) semiconductor is reported, which can harness visible light to oxidize water as well as decompose organic contaminants in aqueous solution, and its potential as a photofunctional material for both water splitting and waste-water cleaning is suggested.
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Photodegradation of Rhodamine B and Methyl Orange over Boron-Doped g-C3N4 under Visible Light Irradiation
TL;DR: The photodegradation mechanisms for two typical dyes, rhodamine B (Rh B) and methyl orange (MO), are proposed based on comparison experiments and the electron paramagnetic resonance was used to detect the active species for the photodegrading reaction over g-C(3)N(4).
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Photoelectrochemical cells for solar hydrogen production: current state of promising photoelectrodes, methods to improve their properties, and outlook
TL;DR: In this article, a review focusing on recent developments of some promising photoelectrode materials, such as BiVO4, a-Fe2O3, TaON, and Ta3N5 for solar hydrogen production is presented.
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Organic–inorganic composite photocatalyst of g-C3N4 and TaON with improved visible light photocatalytic activities
TL;DR: The obviously increased performance of g-C(3)N(4)-TaON is ascribed mainly to enhancement of electron-hole separations both at the interface and in the semiconductors.