Zhe Cheng

Bio: Zhe Cheng is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 1, co-authored 1 publications receiving 3 citations.

A new sturcture AlGaN/GaN HEMT

Abstract: In several decades, the world has witnessed various dramatic changes since applying of semiconductor. The performance requirements of semiconductor products are continue increasing while the technology is improving. In order to satisfy the requirements, the researches of new material and device structure is necessary. This paper shows a new structure of GaN HEMT. An AlGaN/GaN HEMT consists of AlGaN/GaN Heterojunction, drain electrode, source electrode and gate electrode. Though the researchers have reported a large number of HEMT structures since M. Asif Khan and his colleagues repot the first AlGaN/GaN HEMT in 1993, there is none of the structures, which three electrodes are in different surfaces of device. This paper describes a new structure called different-surface-gate structure, which drain and source electrodes are on the other surface while the gate electrode is on the top surface (AlGaN surface) of the device as normal HEMTs. This paper will establish two models by TCAD simulation software. One is the model of different-surface-gate AlGaN/GaN HEMT and the other one is normal structure AlGaN/GaN HEMT, which is the control model. After building the models, the compare of the models will show the saturation current of the different-surface-gate model is 120% as large as it of the other model.

Design and Characterization of 2DEG Structure of a Gallium Nitride HEMT

Abstract: In this work we introduced 2DEG (2-Dimentional Electron Gas) structure of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) and compared it with a conventional structure. 2DEG structure is a heterostructure which is formed by combination of group III-IV elements. Our proposed GaN HEMT can be employed for high speed, high power, and high voltage applications. For high power applications we used SOD (Silicon-On-Diamond) technology to transfer heat to the substrate. This research paper will present design of two models using SILVACO TCAD device simulation software. One is the design of 2DEG structure and another one is the conventional structure of Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) HEMT.

Analytical Investigation of Differential Conductance in Submicron HEMT with Two Different Substrates

Abstract: Differential conductance of submicron HEMT is analytically investigated as a function of drain bias for different structural parameters and parasitic effects. Simulation is carried out for two different substrate based devices, Si and sapphire, and comparative study is carried out for those structural parameters at which V GS provides maximum transconductance. Poisson's equation and carrier density equations are simultaneously solved to get drain current variations and parasitic effects are invoked through boundary conditions for realistic results. Result speaks that effect of threshold voltage is negligible on sapphire based device over a wider range of horizontal bias. Nanometric channel length provides almost constant conductance profile with insignificant magnitude.

Comparative Investigation of DSG-MOSFET and Some analysis on its Performance

Abstract: AlGaN/GaN-based DSG-MOSFET is upcoming model of MOSFET. In this paper, comparative study of DSG-MOSFET $\mathrm{V}_{\mathrm{s}}$ normal MOSFET and analyzed the performance of DSG-MOSFET. The main features of it are there is negotiable barrier between source and drain so current moves more freely and current is more than normal MOSFET. As if current is more than normal MOSFET then crack length is minimum in DSG-MOSFET.