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Zhechao Wang

Bio: Zhechao Wang is an academic researcher from Ghent University. The author has contributed to research in topics: Silicon photonics & Silicon. The author has an hindex of 19, co-authored 82 publications receiving 1823 citations. Previous affiliations of Zhechao Wang include Zhejiang University & IMEC.


Papers
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Journal ArticleDOI
TL;DR: In this article, an optically pumped InP-based distributed feedback laser array was demonstrated for wavelength division multiplexing applications on (001)-silicon operating at room temperature.
Abstract: Scientists demonstrate an optically pumped InP-based distributed feedback laser array monolithically grown on (001)-silicon operating at room temperature that is suitable for wavelength-division multiplexing applications.

289 citations

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TL;DR: In this paper, a polarization rotator based on asymmetrical Si nanowires is presented and optimized for high polarization rotation efficiency (almost 100%) with a very small conversion length (10 μm) and consequently becomes very compact.
Abstract: A polarization rotator based on asymmetrical Si nanowires is presented and optimized for high polarization rotation efficiency (almost 100%). The present polarization rotator has a very small conversion length (~10 μm) and consequently becomes very compact. The analysis of the wavelength dependence shows the present polarization rotator has a broad bandwidth (~120 nm) for high conversion efficiency (>97%). The tolerance to various fabrication errors is also numerically studied. To compensate the fabrication error, a postcompensation method is introduced by modifying the refractive index of the up-cladding.

183 citations

Journal ArticleDOI
TL;DR: In this paper, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots.
Abstract: Silicon does not emit light efficiently, therefore the integration of other light-emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration approaches have been extensively explored in the past decade. Here, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots. The basic approaches to create waveguide-coupled on-chip light sources for different application scenarios are discussed, both for silicon and silicon nitride based waveguides. A selection of recent representative device demonstrations is presented, including high speed DFB lasers, ultra-dense comb lasers, short (850nm) and long (2.3 mu m) wavelength lasers, wide-band LEDs, monolithic O-band lasers and micro-disk lasers operating in the visible. The challenges and opportunities of these approaches are discussed.

165 citations

Journal ArticleDOI
TL;DR: The measured waveguide-to-fiber coupling efficiency of 64% (-1.9 dB) for the transverse electric polarization is achieved by the present nonuniform grating coupler directly defined on a regular silicon-on-insulator wafer.
Abstract: We present design, fabrication, and characterization of a silicon-on-insulator grating coupler of high efficiency for coupling between a silicon nanophotonic waveguide and a single mode fiber. By utilizing the lag effect of the dry etching process, a grating coupler consisting of nonuniform grooves with different widths and depths is designed and fabricated to maximize the overlapping between the upward wave and the fiber mode. The measured waveguide-to-fiber coupling efficiency of 64% (-1.9 dB) for the transverse electric polarization is achieved by the present nonuniform grating coupler directly defined on a regular silicon-on-insulator wafer.

159 citations

Journal ArticleDOI
TL;DR: A demonstration of a III-V-on-Si comb laser that can function as a compact, low-cost frequency comb generator after frequency stabilization and the use of low-loss passive silicon waveguides enables the integration of a long laser cavity, which enables the laser to be locked in the passive mode at a record-low 1 GHz repetition rate.
Abstract: Optical frequency combs emerge as a promising technology that enables highly sensitive, near-real-time spectroscopy with a high resolution The currently available comb generators are mostly based on bulky and high-cost femtosecond lasers for dense comb generation (line spacing in the range of 100 MHz to 1 GHz) However, their integrated and low-cost counterparts, which are integrated semiconductor mode-locked lasers, are limited by their large comb spacing, small number of lines and broad optical linewidth In this study, we report a demonstration of a III-V-on-Si comb laser that can function as a compact, low-cost frequency comb generator after frequency stabilization The use of low-loss passive silicon waveguides enables the integration of a long laser cavity, which enables the laser to be locked in the passive mode at a record-low 1 GHz repetition rate The 12-nm 10-dB output optical spectrum and the notably small optical mode spacing results in a dense optical comb that consists of over 1400 equally spaced optical lines The sub-kHz 10-dB radio frequency linewidth and the narrow longitudinal mode linewidth (<400 kHz) indicate notably stable mode-locking Such integrated dense comb lasers are very promising, for example, for high-resolution and real-time spectroscopy applications

133 citations


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Journal ArticleDOI
TL;DR: Lasing performance, coupled with the facile solution growth of single-crystal nanowires and the broad stoichiometry-dependent tunability of emission colour, makes lead halide perovskites ideal materials for the development of nanophotonics, in parallel with the rapid development in photovoltaics from the same materials.
Abstract: The remarkable performance of lead halide perovskites in solar cells can be attributed to the long carrier lifetimes and low non-radiative recombination rates, the same physical properties that are ideal for semiconductor lasers. Here, we show room-temperature and wavelength-tunable lasing from single-crystal lead halide perovskite nanowires with very low lasing thresholds (220 nJ cm(-2)) and high quality factors (Q ∼ 3,600). The lasing threshold corresponds to a charge carrier density as low as 1.5 × 10(16) cm(-3). Kinetic analysis based on time-resolved fluorescence reveals little charge carrier trapping in these single-crystal nanowires and gives estimated lasing quantum yields approaching 100%. Such lasing performance, coupled with the facile solution growth of single-crystal nanowires and the broad stoichiometry-dependent tunability of emission colour, makes lead halide perovskites ideal materials for the development of nanophotonics, in parallel with the rapid development in photovoltaics from the same materials.

2,324 citations

Journal ArticleDOI
TL;DR: It is demonstrated theoretically and experimentally that a specific gradient-index meta-surface can convert a PW to a SW with nearly 100% efficiency, and may pave the way for many applications, including high-efficiency surface plasmon couplers, anti-reflection surfaces, light absorbers, and so on.
Abstract: The arbitrary control of electromagnetic waves is a key aim of photonic research. Although, for example, the control of freely propagating waves (PWs) and surface waves (SWs) has separately become possible using transformation optics and metamaterials, a bridge linking both propagation types has not yet been found. Such a device has particular relevance given the many schemes of controlling electromagnetic waves at surfaces and interfaces, leading to trapped rainbows, lensing, beam bending, deflection, and even anomalous reflection/refraction. Here, we demonstrate theoretically and experimentally that a specific gradient-index meta-surface can convert a PW to a SW with nearly 100% efficiency. Distinct from conventional devices such as prism or grating couplers, the momentum mismatch between PW and SW is compensated by the reflection-phase gradient of the meta-surface, and a nearly perfect PW-SW conversion can happen for any incidence angle larger than a critical value. Experiments in the microwave region, including both far-field and near-field characterizations, are in excellent agreement with full-wave simulations. Our findings may pave the way for many applications, including high-efficiency surface plasmon couplers, anti-reflection surfaces, light absorbers, and so on.

1,567 citations

Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 cm−2, a room-temperature output power exceeding 105mW and operation up to 120°C.
Abstract: Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm–2, a room-temperature output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm−2 in the III–V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic–electronic integration.

682 citations

Journal ArticleDOI
TL;DR: In this paper, a review of the developments in the emerging and rapidly advancing field of atomic and molecular broadband spectroscopy with frequency combs is presented. But this review is limited to the use of laser frequency combers.
Abstract: A laser frequency comb is a broad spectrum composed of equidistant narrow lines. Initially invented for frequency metrology, such combs enable new approaches to spectroscopy over broad spectral bandwidths, of particular relevance to molecules. The performance of existing spectrometers — such as crossed dispersers employing, for example, virtual imaging phase array etalons, or Michelson-based Fourier transform interferometers — can be dramatically enhanced with optical frequency combs. A new class of instruments, such as dual-comb spectrometers without moving parts, enables fast and accurate measurements over broad spectral ranges. The direct self-calibration of the frequency scale of the spectra within the accuracy of an atomic clock and the negligible contribution of the instrumental line-shape will enable determinations of all spectral parameters with high accuracy for stringent comparisons with theories in atomic and molecular physics. Chip-scale frequency comb spectrometers promise integrated devices for real-time sensing in analytical chemistry and biomedicine. This Review gives a summary of the developments in the emerging and rapidly advancing field of atomic and molecular broadband spectroscopy with frequency combs. Frequency comb spectroscopy is a recent field of research that has blossomed in the past five years. This Review discusses developments in the emerging and rapidly advancing field of atomic and molecular broadband spectroscopy with frequency combs.

576 citations

Journal ArticleDOI
Hui Feng Ma1, Xiaopeng Shen1, Qiang Cheng1, Wei Xiang Jiang1, Tie Jun Cui1 
TL;DR: In this article, a smooth bridge between the conventional coplanar waveguide with 50 Ω impedance and plasmonic waveguide (e.g., an ultrathin corrugated metallic strip) has been proposed in the microwave frequency, which converts the guided waves to spoof SPPs with high efficiency in broadband.
Abstract: The conversion from spatial propagating waves to surface plasmon polaritons (SPPs) has been well studied, and shown to be very efficient by using gradient-index metasurfaces. However, feeding energies into and extracting signals from functional plasmonic devices or circuits through transmission lines require the efficient conversion between SPPs and guided waves, which has not been reported, to the best of our knowledge. In this paper, a smooth bridge between the conventional coplanar waveguide (CPW) with 50 Ω impedance and plasmonic waveguide (e.g., an ultrathin corrugated metallic strip) has been proposed in the microwave frequency, which converts the guided waves to spoof SPPs with high efficiency in broadband. A matching transition has been proposed and designed, which is constructed by gradient corrugations and flaring ground, to match both the momentum and impedance of CPW and the plasmonic waveguide. Simulated and measured results on the transmission coefficients and near-filed distributions show excellent transmission efficiency from CPW to a plasmonic waveguide to CPW in a wide frequency band. The high-efficiency and broadband conversion between SPPs and guided waves opens up a new avenue for advanced conventional plasmonic integrated functional devices and circuits.

551 citations