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Zhen Chen

Researcher at Southeast University

Publications -  33
Citations -  4174

Zhen Chen is an academic researcher from Southeast University. The author has contributed to research in topics: Thermal conductivity & Graphene. The author has an hindex of 14, co-authored 33 publications receiving 3482 citations. Previous affiliations of Zhen Chen include University of California, Riverside & Stanford University.

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Controlled ripple texturing of suspended graphene and ultrathin graphite membranes

TL;DR: The first direct observation and controlled creation of one- and two-dimensional periodic ripples in suspended graphene sheets, using both spontaneously and thermally generated strains are reported, elucidate the ripple formation process and can be understood in terms of classical thin-film elasticity theory.
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Radiative cooling to deep sub-freezing temperatures through a 24-h day-night cycle.

TL;DR: It is theoretically show that ultra-large temperature reduction for as much as 60 °C from ambient is achievable by using a selective thermal emitter and by eliminating parasitic thermal load, and experimentally demonstrate a temperature reduction that far exceeds previous works.
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Correspondence: Reply to ‘The experimental requirements for a photon thermal diode’

TL;DR: In this article, it was shown that the symmetry error is not applicable to the experiments without thermal collimation, specifically the results presented in Fig. 1a here and Fig. 2, where the graphite plate next to BB1 can convert the local equilibrium Bose-Einstein statistics fBE(T1) to a nonlocal, non-equilibrium reservoir boundary condition fNE,1(T 1,T 2), at the boundary between (BB1þ plate1) and the test section SA, as shown here in F.
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Daytime radiative cooling using near-black infrared emitters

TL;DR: In this article, a polymer-coated fused silica mirror, as a near-ideal blackbody in the mid-infrared and nearideal reflector in the solar spectrum, achieves radiative cooling below ambient air temperature under direct sunlight (8.2 °C) and at night (6.4 °C).
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Thermal contact resistance between graphene and silicon dioxide

TL;DR: In this paper, the thermal contact resistance between graphene and silicon dioxide was measured using a differential 3ω method and the sample thicknesses were 1.2, 1.5, 2.8, and 3.0 nm, as determined by atomic force microscopy.