We measured the elastic properties and intrinsic breaking strength of free-standing monolayer graphene membranes by nanoindentation in an atomic force microscope. The force-displacement behavior is interpreted within a framework of nonlinear elastic stress-strain response, and yields second- and third-order elastic stiffnesses of 340 newtons per meter (N m(-1)) and -690 Nm(-1), respectively. The breaking strength is 42 N m(-1) and represents the intrinsic strength of a defect-free sheet. These quantities correspond to a Young's modulus of E = 1.0 terapascals, third-order elastic stiffness of D = -2.0 terapascals, and intrinsic strength of sigma(int) = 130 gigapascals for bulk graphite. These experiments establish graphene as the strongest material ever measured, and show that atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.

/pdf/measurement-of-the-elastic-properties-and-intrinsic-strength-27nythtm75.pdf

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

/pdf/a-comprehensive-review-of-zno-materials-and-devices-21a3zjadem.pdf

A comprehensive review of zno materials and devices

The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties * To whom correspondence should be addressed. Phone, 404-8940292; fax, 404-894-0294; e-mail, mostafa.el-sayed@ chemistry.gatech.edu. † Case Western Reserve UniversitysMillis 2258. ‡ Phone, 216-368-5918; fax, 216-368-3006; e-mail, burda@case.edu. § Georgia Institute of Technology. 1025 Chem. Rev. 2005, 105, 1025−1102

Chemistry and properties of nanocrystals of different shapes.

We have converted nanoscale mechanical energy into electrical energy by means of piezoelectric zinc oxide nanowire (NW) arrays. The aligned NWs are deflected with a conductive atomic force microscope tip in contact mode. The coupling of piezoelectric and semiconducting properties in zinc oxide creates a strain field and charge separation across the NW as a result of its bending. The rectifying characteristic of the Schottky barrier formed between the metal tip and the NW leads to electrical current generation. The efficiency of the NW-based piezoelectric power generator is estimated to be 17 to 30%. This approach has the potential of converting mechanical, vibrational, and/or hydraulic energy into electricity for powering nanodevices.

/pdf/piezoelectric-nanogenerators-based-on-zinc-oxide-nanowire-1swcm3u2x8.pdf

Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays

There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

/pdf/high-performance-lithium-battery-anodes-using-silicon-58e1j6kr4f.pdf

High-performance lithium battery anodes using silicon nanowires

Ultralong beltlike (or ribbonlike) nanostructures (so-called nanobelts) were successfully synthesized for semiconducting oxides of zinc, tin, indium, cadmium, and gallium by simply evaporating the desired commercial metal oxide powders at high temperatures. The as-synthesized oxide nanobelts are pure, structurally uniform, and single crystalline, and most of them are free from defects and dislocations. They have a rectanglelike cross section with typical widths of 30 to 300 nanometers, width-to-thickness ratios of 5 to 10, and lengths of up to a few millimeters. The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides and building functional devices along individual nanobelts.

https://science.sciencemag.org/content/sci/291/5510/1947.full.pdf

Nanobelts of Semiconducting Oxides

Gas sensors have been fabricated using the single-crystalline SnO2 nanobelts. Electrical characterization showed that the contacts were ohmic and the nanobelts were sensitive to environmental polluting species like CO and NO2, as well as to ethanol for breath analyzers and food control applications. The sensor response, defined as the relative variation in conductance due to the introduction of the gas, is 4160% for 250 ppm of ethanol and −1550% for 0.5 ppm NO2 at 400 °C. The results demonstrate the potential of fabricating nanosized sensors using the integrity of a single nanobelt with a sensitivity at the level of a few ppb.

http://www.nanoscience.gatech.edu/zlwang/paper/2002/02_APL_5.pdf

Stable and highly sensitive gas sensors based on semiconducting oxide nanobelts

Functional oxides are the fundamentals of smart devices. This article reviews novel nanostructures of functional oxides, including nanobelts, nanowires, nanosheets, and nanodiskettes, that have been synthesized in the authors’ laboratory. Among the group of ZnO, SnO2, In2O3, Ga2O3, CdO, and PbO2, which belong to different crystallographic systems and structures, a generic nanobelt structure has been synthesized. The nanobelts are single crystalline and dislocation-free, and their surfaces are atomically flat. The oxides are semiconductors, and have been used for fabrication of nanodevices such as field-effect transistors and gas sensors. Taking SnO2 and SnO as examples, other types of novel nanostructures are illustrated. Their growth, phase transformation, and stability are discussed. The nanobelts and related nanostructures are a unique group that is likely to have important applications in electronic, optical, sensor, and optoelectronic nanodevices.

Novel Nanostructures of Functional Oxides Synthesized by Thermal Evaporation

We have fabricated field-effect transistors (FETs) based on single SnO2 and ZnO nanobelts of thicknesses between 10 and 30 nm. Switching ratios as large as 6 orders of magnitude and conductivities as high as 15 (Ω cm)-1 are observed. Annealing SnO2 nanobelt FETs in an oxygen-deficient atmosphere produces a negative shift in gate threshold voltage, indicating doping by the generation of surface oxygen vacancies. This treatment provides an effective way of tuning the electrical performance of the nanobelt devices. The ability of SnO2 FETs to act as gas sensors is also demonstrated. SnO2 FETs with lengths of about 500 nm or less show an anomalous behavior where the conductance cannot be modulated by the gate. ZnO nanobelt FETs are sensitive to ultraviolet light. Both photogeneration of electron−hole pairs and doping by UV induced surface desorption contribute to the conductivity.

Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts

Visible-light persistent phosphors are being widely used as self-sustained night-vision materials because of their sufficiently strong and long afterglow (>10 h) and their ability to be excited by sunlight as well as room light. In contrast, persistent phosphors for near-infrared (NIR) wavelengths are lacking. Here we report a series of Cr(3+)-doped zinc gallogermanate NIR persistent phosphors that exhibit strong emission at 650-1,000 nm, extending beyond the typical 690-750 nm, and with a super-long afterglow of more than 360 h. These new NIR persistent phosphors are all-weather materials that can be rapidly, effectively and repeatedly charged by natural sunlight in almost all kinds of outdoor environment. Seconds to minutes of sunlight activation can result in more than two weeks of persistent NIR light emission. This new series of NIR persistent materials have potential applications in night-vision surveillance, solar energy utilization and in vivo bio-imaging.

Zhengwei Pan

Papers

Nanobelts of Semiconducting Oxides

Stable and highly sensitive gas sensors based on semiconducting oxide nanobelts

Novel Nanostructures of Functional Oxides Synthesized by Thermal Evaporation

Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts

Sunlight-activated long-persistent luminescence in the near-infrared from Cr 3+ -doped zinc gallogermanates