There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

/pdf/spintronics-fundamentals-and-applications-2dx38n6phu.pdf

Spintronics: Fundamentals and applications

Organic thin-film transistors (OTFTs) have lived to see great improvements in recent years. This review presents new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of OTFTs. The shifted focus in research from novel chemical structures to fabrication technologies that optimize morphology and structural order is underscored by chapters on vacuum-deposited and solution-processed organic semiconducting films. Finally, progress in the growing field of the n-type OTFTs is discussed in ample detail. The Figure, showing a pentacene film edge on SiO2, illustrates the morphology issue.

Organic Thin Film Transistors for Large Area Electronics

2.2. Materials 929 2.3. Factors Influencing Charge Mobility 931 2.3.1. Molecular Packing 931 2.3.2. Disorder 932 2.3.3. Temperature 933 2.3.4. Electric Field 934 2.3.5. Impurities 934 2.3.6. Pressure 934 2.3.7. Charge-Carrier Density 934 2.3.8. Size/molecular Weight 935 3. The Charge-Transport Parameters 935 3.1. Electronic Coupling 936 3.1.1. The Energy-Splitting-in-Dimer Method 936 3.1.2. The Orthogonality Issue 937 3.1.3. Impact of the Site Energy 937 3.1.4. Electronic Coupling in Oligoacene Derivatives 938

Charge transport in organic semiconductors.

All-dielectric metamaterials utilizing Mie resonances in high-permittivity dielectric resonators offer a low-loss alternative to plasmonic metamaterials. Here we present the demonstration of a single-negative all-dielectric metamaterial, comprised of a single layer of cylindrical silicon resonators on a silicon-on-insulator substrate, that possesses peak reflectance over 99% and an average reflectance over 98% across a 200 nm wide bandwidth in the short-wavelength infrared region. The study is also extended to disordered metamaterials, demonstrating a correlation between the degree of disorder and the reduction in reflectance. It is shown that near-unity reflection is preserved as long as resonator interaction is avoided. Realization of near-unity reflection from disordered metamaterials opens the door to large-area implementations using low-cost self-assembly based fabrication techniques.

Experimental demonstration of a broadband all-dielectric metamaterial perfect reflector

In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime which has no analog in metals. Here spin injection from a ferromagnet (FM) into a nonmagnetic semiconductor (NS) is extensively studied by applying this spin drift-diffusion equation to several typical injection structures such as FM/NS, FM/NS/FM, and FM/NS/NS structures. We find that in the high-field regime spin injection from a ferromagnet into a semiconductor is enhanced by several orders of magnitude. For injection structures with interfacial barriers, the electric field further enhances spin injection considerably. In FM/NS/FM structures high electric fields destroy the symmetry between the two magnets at low fields, where both magnets are equally important for spin injection, and spin injection becomes determined by the magnet from which carriers flow into the semiconductor. The field-induced spin injection enhancement should also be insensitive to the presence of a highly doped nonmagnetic semiconductor $({\mathrm{NS}}^{+})$ at the FM interface, thus ${\mathrm{F}\mathrm{M}/\mathrm{N}\mathrm{S}}^{+}/\mathrm{NS}$ structures should also manifest efficient spin injection at high fields. Furthermore, high fields substantially reduce the magnetoresistance observable in a recent experiment on spin injection from magnetic semiconductors.

https://arxiv.org/pdf/cond-mat/0206321.pdf

Spin diffusion and injection in semiconductor structures: Electric field effects

We present a model to describe electrical conductivity along the DNA double helix In this model, DNA is considered as a one-dimensional disordered system, and electrons are transported via variable range hopping between localized states Thermal structural fluctuations in DNA further localize electronic wave functions, giving rise to a temperature-dependent localization length The model quantitatively explains the temperature dependence of the conductivity observed in the lambda phage DNA (lambda-DNA)

https://lib.dr.iastate.edu/cgi/viewcontent.cgi?article=1865&context=chem_pubs

Variable range hopping and electrical conductivity along the DNA double helix.

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high electric-field diffusive regime which has no analog in metals. In this regime there are two distinct spin-diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude. This enhancement also occurs for high electric-field spin injection through a spin-selective interfacial barrier.

https://arxiv.org/pdf/cond-mat/0201425.pdf

Electric-field dependent spin diffusion and spin injection into semiconductors

Hybrid organic–inorganic perovskites have emerged as a new class of semiconductors that exhibit excellent performance as active layers in photovoltaic solar cells. These compounds are also highly promising materials for the field of spintronics due to their large and tunable spin–orbit coupling, spin-dependent optical selection rules, and their predicted electrically tunable Rashba spin splitting. Here we demonstrate the optical orientation of excitons and optical detection of spin-polarized exciton quantum beating in polycrystalline films of the hybrid perovskite CH3NH3PbClxI3−x. Time-resolved Faraday rotation measurement in zero magnetic field reveals unexpectedly long spin lifetimes exceeding 1 ns at 4 K, despite the large spin–orbit couplings of the heavy lead and iodine atoms. The quantum beating of exciton states in transverse magnetic fields shows two distinct frequencies, corresponding to two g-factors of 2.63 and −0.33, which we assign to electrons and holes, respectively. These results provide a basic picture of the exciton states in hybrid perovskites, and suggest they hold potential for spintronic applications. Hybrid perovskites are known to have excellent optoelectronic properties, but the observation of exciton states with long spin lifetimes suggests that they may also have potential spintronics applications.

Zhi-Gang Yu

Papers

Experimental demonstration of a broadband all-dielectric metamaterial perfect reflector

Spin diffusion and injection in semiconductor structures: Electric field effects

Variable range hopping and electrical conductivity along the DNA double helix.

Electric-field dependent spin diffusion and spin injection into semiconductors

Spin-polarized exciton quantum beating in hybrid organic-inorganic perovskites