Z
Zhifeng Ren
Researcher at Texas Center for Superconductivity
Publications - 726
Citations - 84970
Zhifeng Ren is an academic researcher from Texas Center for Superconductivity. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 122, co-authored 695 publications receiving 71212 citations. Previous affiliations of Zhifeng Ren include Massachusetts Institute of Technology & University of Cincinnati.
Papers
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Nanostructured Thermoelectric Skutterudite Co1−xNixSb3 Alloys
Qinyu He,Qing Hao,Xiaowei Wang,Jian Yang,Yucheng Lan,Xiao Yan,Bo Yu,Yi Ma,Bed Poudel,Giri Joshi,Dezhi Wang,Gang Chen,Zhifeng Ren +12 more
TL;DR: Nanostructured Thermoelectric Skutterudite Co1−xNixSb3 Alloys Qinyu He1 2, Qing Hao3, Xiaowei Wang2, Jian Yang2, Yucheng Lan2, Xiao Yan2, Bo Yu2, Yi Ma2, Bed Poudel2, Giri Joshi2, Dezhi Wang2 and Gang Chen3 ∗, and Zhifeng Ren2 ∗ as mentioned in this paper
Journal ArticleDOI
Applications of multibeam SEM/FIB instrumentation in the integrated sciences
Gregory McMahon,J. Rybczynski,Y. Wang,Y. Gao,Dong Cai,Pashupati Dhakal,N. Argenti,Kris Kempa,Zhifeng Ren,Natasha Erdman,Michael J. Naughton +10 more
TL;DR: In this paper, Christiaan Huygens and Sir Isaac Newton, at odds with their competing wave/particle theories of light, today reached a compromise with their unveiling of a new multibeam SEM/FIB instrument featuring an SEM column designed by Huygen and a FIB column employing electrostatic lenses to focus the beam of ions devised by Newton.
Patent
Nanoscopically thin photovoltaic junction solar cells
TL;DR: Nanoscopically thin photovoltaic junction solar cells are disclosed in this paper, where an overall thickness of the photiovoltaic film is between about 15 nm to about 30 nm so as to extract hot carriers excited across a band gap.
Patent
Thermoelectric Materials and Methods for Synthesis Thereof
TL;DR: In this paper, the lead telluride/selenide based materials of the present disclosure are p-type thermoelectric materials formed by adding sodium (Na), silicon (Si) or both to thallium doped lead-telluride materials.