Z
Zhifeng Ren
Researcher at Texas Center for Superconductivity
Publications - 726
Citations - 84970
Zhifeng Ren is an academic researcher from Texas Center for Superconductivity. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 122, co-authored 695 publications receiving 71212 citations. Previous affiliations of Zhifeng Ren include Massachusetts Institute of Technology & University of Cincinnati.
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Ternary Ni2(1-x)Mo2xP nanowire arrays toward efficient and stable hydrogen evolution electrocatalysis under large-current-density
Luo Yu,Luo Yu,Ishwar Kumar Mishra,Yunlong Xie,Haiqing Zhou,Haiqing Zhou,Jingying Sun,Jianqing Zhou,Yizhou Ni,Dan Luo,Fang Yu,Fang Yu,Ying Yu,Shuo Chen,Zhifeng Ren +14 more
TL;DR: Li et al. as mentioned in this paper proposed ternary Ni2(1-x)Mo2xP porous nanowire arrays for hydrogen evolution reaction (HER) under large current density.
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Nanofluid of graphene-based amphiphilic Janus nanosheets for tertiary or enhanced oil recovery: High performance at low concentration.
Dan Luo,Feng Wang,Jingyi Zhu,Feng Cao,Yuan Liu,Xiaogang Li,Richard C. Willson,Zhaozhong Yang,Ching-Wu Chu,Ching-Wu Chu,Zhifeng Ren +10 more
TL;DR: A nanofluid of graphene-based Janus amphiphilic nanosheets for enhanced oil recovery with efficiency of about 15.2%, comparable to chemical methods, which is both economically and environmentally beneficial to the petroleum industry.
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Effect of Hf Concentration on Thermoelectric Properties of Nanostructured N‐Type Half‐Heusler Materials HfxZr1–xNiSn0.99Sb0.01
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Studies on thermoelectric figure of merit of Na-doped p-type polycrystalline SnSe
TL;DR: In this article, a room temperature carrier concentration of ∼2.7 × 1019 cm−3 was obtained in 2 atm% Na-doped SnSe samples with the highest power factor obtained in 1.5 atm % Na doping.
Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg
Jun Mao,Jing Shuai,Shaowei Song,Yixuan Wu,Rebecca Dally,Zihang Liu,Jifeng Sun,Qinyong Zhang,Clarina Dela Cruz,Stephen D. Wilson,Yanzhong Pei,David J. Singh,Gang Chen,Jiawei Zhou,Ching-Wu Chu,Zhifeng Ren +15 more
TL;DR: It is demonstrated that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved.