Z
Zhifeng Ren
Researcher at Texas Center for Superconductivity
Publications - 726
Citations - 84970
Zhifeng Ren is an academic researcher from Texas Center for Superconductivity. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 122, co-authored 695 publications receiving 71212 citations. Previous affiliations of Zhifeng Ren include Massachusetts Institute of Technology & University of Cincinnati.
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Self-compensation induced vacancies for significant phonon scattering in InSb
Jun Mao,Jun Mao,Jennifer L. Niedziela,Yumei Wang,Yi Xia,Binghui Ge,Zihang Liu,Jiawei Zhou,Zhensong Ren,Weishu Liu,Maria K. Y. Chan,Gang Chen,Olivier Delaire,Olivier Delaire,Qian Zhang,Zhifeng Ren +15 more
TL;DR: In this paper, the authors demonstrate that vacancies can be effectively induced by the self-compensation effect via chemical doping and show that a substantial reduction in thermal conductivity can be achieved even when the dopant concentration is rather low.
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Chemical synthesis of anisotropic nanocrystalline Sb 2Te 3 and low thermal conductivity of the compacted dense bulk
TL;DR: The results indicated that nanostructured Sb2Te3 is potentially a good candidate for engineered nanocomposites that can lead to high thermoelectric figure-of-merit.
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Superconducting epitaxial (Tl,Bi)Sr1.6Ba0.4Ca2Cu3O9−δ film with high critical current in magnetic field
Zhifeng Ren,C. A. Wang,Jun Wang +2 more
TL;DR: In this article, a prefilm of TlxBiySr1.6Ba0.4Ca2Cu3Oy was first deposited on the (100) surface of LaAlO3 by laser ablation at 300-500 °C.
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Relationship between grain connectivity, alignment, and critical current density in high-temperature superconducting bulk materials
TL;DR: In this paper, hydraulic pressure was successfully employed to partially reorient the c -axes of the highly anisotropic superconducting grains in bulk Tl 0.78 Bi 0.22 Sr 1.6 Ba 0.4 Ca 2 Cu 3 O 9−δ samples.
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Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging
Shan Li,Shan Li,Fanghao Zhang,Chen Chen,Xiaofang Li,Feng Cao,Jiehe Sui,Xingjun Liu,Zhifeng Ren,Qian Zhang +9 more
TL;DR: In this article, n-type Sn1-xPrxSe polycrystals are prepared by ball milling and hot pressing, and a maximum ZT value of 0.7 at 773 K is achieved in Sn0.97Pr0.03Se due to the enhanced electron concentration and electrical conductivity resulting from Pr doping at the Sn site.