Z
Zhipeng Wei
Researcher at Changchun University of Science and Technology
Publications - 205
Citations - 2595
Zhipeng Wei is an academic researcher from Changchun University of Science and Technology. The author has contributed to research in topics: Photoluminescence & Laser. The author has an hindex of 23, co-authored 175 publications receiving 1981 citations.
Papers
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Journal ArticleDOI
Room temperature p-n ZnO blue-violet light-emitting diodes
Zhipeng Wei,Y. M. Lu,Dezhen Shen,Z. Z. Zhang,Bin Yao,Binghui Li,Jiying Zhang,D. X. Zhao,X. W. Fan,Zikang Tang +9 more
TL;DR: In this article, a p-n junction light-emitting diodes (LEDs) were fabricated on c-plane Al2O3 substrates by plasma-assisted molecular beam epitaxy.
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Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms
TL;DR: In this paper, a comparative study on resistive switching in Mn-doped ZnO thin films was carried out, and the results suggest that selecting electrodes dictates the resistive switch mechanism presumably by affecting the migration dynamics of oxygen vacancies.
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Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level.
Xue Chen,Dengkui Wang,Tuo Wang,Zhenyu Yang,Xuming Zou,Peng Wang,Wenjin Luo,Qing Li,Lei Liao,Lei Liao,Weida Hu,Zhipeng Wei +11 more
TL;DR: The eloquent evidences clearly prove that doping-adjusting the Fermi level has great potential applications in high-performance GaAs nanowire photodetectors and other functional photodETectors.
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Optical properties of quasi-type-II structure in GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires
TL;DR: In this paper, the properties of the quasi-type-II structure in a single quantum well nanowire have been investigated and the authors showed that due to the small band offset of conduction bands, both type-I like and type-II like emission exist in the nanowires.
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Characterization of biaxial stress and its effect on optical properties of ZnO thin films
Yongfeng Li,Bin Yao,Yegang Lu,Chunxiao Cong,Z.Z. Zhang,Y. Q. Gai,C. J. Zheng,Bo-Tao Li,Zhipeng Wei,D.Z. Shen,X. W. Fan,L. Xiao,S. C. Xu,Y.C. Liu +13 more
TL;DR: In this paper, the optical band gap of the ZnO film showed a blueshift with increasing biaxial tensile stress, as opposed to the change of the band gap with GaN.