Ziou Wang

TL;DR: Based on first-principles simulations, the oxygen vacancies in the ultrathin HfO 2 layer as the gate dielectric in a metal-oxide-semiconductor structure was found to result in the conduction band offset alignment around the vacancy as mentioned in this paper.

TL;DR: This paper explains how the coupling effect interferes with the action of the sense amplifier (SA) and introduces a coupling suppressed SA, which can achieve obvious improvement under differential input in the Monte Carlo simulation.

TL;DR: In this article, a new 6T-SRAM cell structure of nano-scale technology for low power application is presented, which is closed to the traditional 6T cell, and power consumption is reduced by 22.45% during the write operation.

TL;DR: Ab initio calculations on the anisotropic relaxation of a CuO/TiO2 surface under electric fields and the visible light absorption of these relaxed surfaces are reported.

TL;DR: In this paper, an ab initio calculations about the properties of the interstitials doping in the rutile TiO2 and their impact on the transport coefficients are reported.