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Zoran Krivokapic

Bio: Zoran Krivokapic is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Gate oxide & Gate dielectric. The author has an hindex of 36, co-authored 170 publications receiving 4173 citations. Previous affiliations of Zoran Krivokapic include Cypress Semiconductor & Advanced Micro Devices.


Papers
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Patent
31 May 1995
TL;DR: In this paper, a method and system for matching a machine-implemented process simulator with an actual fabrication line is described, and the matched model is used to simulate the statistical results of mass production by the modeled production line, predicting cross-reticle variance from collected data for inscribe features.
Abstract: A method and system are disclosed for: (a) matching a machine-implemented process simulator with an actual fabrication line, (b) using the matched model to simulate the statistical results of mass production by the modeled production line, (c) using the model to predict cross-reticle variance from collected data for in-scribe features, (d) using the model to decompose the variance contributions of each process parameter and identify the more prominent contributors, and (e) using the model to identify the process parameter adjustments which would provide best leverage when taken one at a time.

223 citations

Patent
15 Jan 2004
TL;DR: In this article, a narrow channel FinFET with a channel width of less than 6 nm is described, in which the channel area is trimmed using NH4OH etch or a reactive ion etch.
Abstract: A narrow channel FinFET is described herein with a channel width of less than 6 nm. The FinFET may include a fin (140) in which the channel area is trimmed using a NH4OH etch or a reactive ion etch (RIE).

194 citations

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, Doped hafnia ferroelectric layers with thicknesses from 3 to 8nm are integrated into state-of-the-art 14nm FinFET technology without any further process modification.
Abstract: Doped hafnia ferroelectric layers with thicknesses from 3 to 8nm are integrated into state-of-the-art 14nm FinFET technology without any further process modification. Ferroelectric devices show improved subthreshold slope (as low as 54mV/dec) and I dsat (up to 165% increase). C-V curves show slight ferroelectric hysteresis. For the first time, we show that ring oscillators with ferroelectric devices can operate at frequencies similar to regular dielectrics, while improved subthreshold slope reduces their active power. We also propose a model for ferroelectric MOSFETs that spans both negative (NCFET) and positive (PCFET) ferroelectric capacitance (CFE) devices. By carefully designed capacitance matching ferroelectric devices can provide significant power savings without sacrificing the speed.

179 citations

Journal ArticleDOI
TL;DR: In this article, the tradeoffs between higher mobility (smaller bandgap) channel and lower band-to-band tunneling (BTBT) leakage have been investigated through detailed experiments and simulations, the transport and leakage in ultrathin (UT) strained germanium (Ge) MOSFETs on bulk and silicon-oninsulator (SOI) have been examined.
Abstract: For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower band-to-band tunneling (BTBT) leakage have been investigated. In particular, through detailed experiments and simulations, the transport and leakage in ultrathin (UT) strained germanium (Ge) MOSFETs on bulk and silicon-on-insulator (SOI) have been examined. In the case of strained Ge MOSFETs on bulk Si, the resulting optimal structure obtained was a UT low-defect 2-nm fully strained Ge epi channel on relaxed Si, with a 4-nm Si cap layer. The fabricated device shows very high mobility enhancements >3.5/spl times/ over bulk Si devices, 2/spl times/ mobility enhancement and >10/spl times/ BTBT reduction over 4-nm strained Ge, and surface channel 50% strained SiGe devices. Strained SiGe MOSFETs having UT (T/sub Ge/ 4/spl times/ over bulk Si devices, >2.5/spl times/ over strained silicon directly on insulator (SSDOI; strained to 20% relaxed SiGe) devices, and >1.5/spl times/ over 60% strained SiGe (on relaxed bulk Si) devices.

129 citations

Patent
03 Mar 2003
TL;DR: In this paper, a method for manufacturing a self-aligned transistor is presented, which includes the steps of: providing a substrate having a buried oxide region, depositing a first nitride mask layer having a pattern overlying a silicon region; forming a trench in said substrate with a depth to said buried oxide; depositing conformal oxide in said trench.
Abstract: A self-aligned transistor including a first silicon portion on an isolation layer, the silicon portion having formed therein a source region and a drain region separated by a channel region. The channel region has a first side and a second side and a top portion, and a gate oxide surrounds the channel on said first side, second side and top portion. A first, a second and a third silicon gate regions are positioned in a second silicon portion surrounding the first silicon portion about the first side, second side and top portion and the channel region. Also disclosed is a method for manufacturing a transistor device. The method for manufacturing includes the steps of: providing a substrate having a buried oxide region; depositing a first nitride mask layer having a pattern overlying a silicon region; forming a trench in said substrate with a depth to said buried oxide; depositing a conformal oxide in said trench; forming vias in said conformal oxide adjacent to said silicon region and removing a portion of said first nitride mask to expose a portion of said silicon region; depositing polysilicon in said vias and on said portion of said silicon region; and implanting an impurity into exposed portions of polysilicon in said trench and of said silicon-on-insulator substrate underlying said second nitride layer.

126 citations


Cited by
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Patent
30 Sep 2010
TL;DR: In this article, the authors proposed a secure content distribution method for a configurable general-purpose electronic commercial transaction/distribution control system, which includes a process for encapsulating digital information in one or more digital containers, a process of encrypting at least a portion of digital information, a protocol for associating at least partially secure control information for managing interactions with encrypted digital information and/or digital container, and a process that delivering one or multiple digital containers to a digital information user.
Abstract: PROBLEM TO BE SOLVED: To solve the problem, wherein it is impossible for an electronic content information provider to provide commercially secure and effective method, for a configurable general-purpose electronic commercial transaction/distribution control system. SOLUTION: In this system, having at least one protected processing environment for safely controlling at least one portion of decoding of digital information, a secure content distribution method comprises a process for encapsulating digital information in one or more digital containers; a process for encrypting at least a portion of digital information; a process for associating at least partially secure control information for managing interactions with encrypted digital information and/or digital container; a process for delivering one or more digital containers to a digital information user; and a process for using a protected processing environment, for safely controlling at least a portion of the decoding of the digital information. COPYRIGHT: (C)2006,JPO&NCIPI

7,643 citations

Journal ArticleDOI
TL;DR: A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
Abstract: The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

2,531 citations

Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Patent
07 Apr 2005
TL;DR: A trusted electronic go-between can validate, witness and/or archive transactions while, in some cases, actively participating in or directing the transaction as mentioned in this paper, while providing an extremely high degree of confidence and trustedness.
Abstract: Documents and other items can be delivered electronically from sender to recipient with a level of trustedness approaching or exceeding that provided by a personal document courier. A trusted electronic go-between can validate, witness and/or archive transactions while, in some cases, actively participating in or directing the transaction. Printed or imaged documents can be marked using handwritten signature images, seal images, electronic fingerprinting, watermarking, and/or steganography. Electronic commercial transactions and transmissions take place in a reliable, “trusted” virtual distribution environment that provides significant efficiency and cost savings benefits to users in addition to providing an extremely high degree of confidence and trustedness. The systems and techniques have many uses including but not limited to secure document delivery, execution of legal documents, and electronic data interchange (EDI).

923 citations

Patent
02 Nov 2010
TL;DR: In this article, an integrated, modular array of administrative and support services for electronic commerce and electronic rights and transaction management is provided for electronic networks, which can also be adapted to the specific needs of electronic commerce value chains.
Abstract: An integrated, modular array of administrative and support services are provided for electronic commerce and electronic rights and transaction management. These administrative and support services supply a secure foundation for conducting transaction-related capabilities over electronic networks, and can also be adapted to the specific needs of electronic commerce value chains. In one embodiment a Distributed Commerce Utility having a secure, programmable, distributed architecture provides these administrative and support services. The Distributed Commerce Utility may comprise a number of Commerce Utility Systems. These Commerce Utility Systems provide a web of infrastructure support available to, and reusable by, the entire electronic community and/or many of its participants. Different support functions can be collected together in hierarchical and/or networked relationships to suit various business models or other objectives. Modular support functions can be combined in different arrays to form different Commerce Utility Systems for different design implementations and purposes.

777 citations