This paper presents a low power boost converter for thermoelectric energy harvesting that demonstrates an efficiency that is 15% higher than the state-of-the-art for voltage conversion ratios above 20. This is achieved by utilizing a technique allowing synchronous rectification in the discontinuous conduction mode. A low-power method for input voltage monitoring is presented. The low input voltage requirements allow operation from a thermoelectric generator powered by body heat. The converter, fabricated in a 0.13 μm CMOS process, operates from input voltages ranging from 20 mV to 250 mV while supplying a regulated 1 V output. The converter consumes 1.6 (1.1) μW of quiescent power, delivers up to 25 (175) μW of output power, and is 46 (75)% efficient for a 20 mV and 100 mV input, respectively.

A 20 mV Input Boost Converter With Efficient Digital Control for Thermoelectric Energy Harvesting

Thermal management and temperature uniformity enhancement of electronic devices by micro heat sinks: A review

Since the positive influences of defects on the performance of electroceramics were discovered, investigations concerning on defects and aliovalent doping routes have grown rapidly in the fields of inorganic chemistry and condensed matter physics. In this article, we summarized the types of defects in electroceramics as well as characterization tools of defects and highlighted the effects of intrinsic and extrinsic defects on the material performances with the emphasis on dielectric, ferroelectric, and piezoelectric properties. We mainly introduced defect related theoretical simulation and experimental results in several typical incipient ferroelectrics, ferroelectrics, and antiferroelectrics. Hence, the influences of defects on the crystal lattice were summed up, and then the main physical mechanisms were highlighted. Particularly, the performance enhancements of aliovalently doped electroceramics were also evaluated and reviewed. Finally, the outlook and challenges were discussed on the basis of their current developments. This article covers not only an overview of the state-of-the-art advances of defects and aliovalent doping routes in electroceramics but also the future prospects that may open another window to tune the electrical performance of electroceramics via intentionally introducing certain defects.

Defects and Aliovalent Doping Engineering in Electroceramics.

Power semiconductor devices constitute the heart of modern power electronic apparatus. They are used in power electronic converters in the form of a matrix of on-off switches, and help to convert power from ac-to-dc (rectifier), dc-to-dc (chopper), dc-to-ac (inverter), and ac-to-ac at the same (ac controller) or different frequencies (cycloconverter). The switching mode power conversion gives high efficiency, but the disadvantage is that due to the nonlinearity of switches, harmonics are generated at both the supply and load sides. The switches are not ideal, and they have conduction and turn-on and turn-off switching losses. Converters are widely used in applications such as heating and lighting controls, ac and dc power supplies, electrochemical processes, dc and ac motor drives, static VAR generation, active harmonic filtering, etc. Although the cost of power semiconductor devices in power electronic equipment may hardly exceed 20–30 percent, the total equipment cost and performance may be highly influenced by the characteristics of the devices. An engineer designing equipment must understand the devices and their characteristics thoroughly in order to design efficient, reliable, and cost-effective systems with optimum performance. It is interesting to note that the modern technology evolution in power electronics has generally followed the evolution of power semiconductor devices. The advancement of microelectronics has greatly contributed to the knowledge of power device materials, processing, fabrication, packaging, modeling, and simulation. Today’s power semiconductor devices are almost exclusively based on silicon material and can be classified as follows:

/pdf/power-semiconductor-devices-4pe39n3k1o.pdf

Power Semiconductor Devices

We present the design, fabrication and characterization of a compact and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. Slow-light effects in the electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW), together with broadband electric field enhancement provided by the bowtie antenna, are utilized to enhance the interaction of microwaves and optical waves, enabling an ultra large effective in-device EO coefficient over 1000 pm/V and thus a high sensitivity. The EO polymer refilled slot PCW is designed for low-dispersion slow-light propagation, high poling efficiency, and high optical mode confinement inside the slot. The bowtie antenna acts not only as a receiving antenna, but also as poling electrodes during the fabrication process. A bowtie antenna integrated on doped silicon slot PCW is demonstrated to have a broad operational bandwidth, with a maximum resonance at the frequency of 10 GHz. The strongly enhanced broadband electric field is used to directly modulate the phase of the optical waves propagating through the slot PCW embedded inside the feed gap of the bowtie antenna. The phase modulation is then converted to intensity modulation using an external reference arm to form a Mach-Zehnder interferometer in our experimental setup. The sensing of electromagnetic field at 8.4 GHz is experimentally demonstrated, with a minimum detectable electromagnetic power density of $8.4\, {\rm mW\!/\!m}^{2}$ , corresponding to a minimum detectable electric field of 2.5 V/m.

Integrated Photonic Electromagnetic Field Sensor Based on Broadband Bowtie Antenna Coupled Silicon Organic Hybrid Modulator

The applicability of charge-pumping technique to characterize the oxide/silicon interface in standard power Vertical Double-diffused (VD)MOS transistors is studied. Qualitative analysis of the charge-pumping threshold and flat-band voltage distributions in the VDMOS structure, supported with rigorous transient numerical modeling of the charge-pumping effect, shows that the measurements can be carried out in the subthreshold region. This conclusion is confirmed by various experimental results. The characteristics, i.e. charge-pumping current versus gate top level, is studied in detail. The changes in the characteristics after /spl gamma/-ray irradiation are analyzed. A charge-pumping-based method for separate extraction of interface state density and density of charge trapped in the oxide after irradiation of VDMOSFETs is proposed. The validity and limitations of the method are studied by experiments and modeling.

Charge-pumping characterization of SiO/sub 2//Si interface in virgin and irradiated power VDMOSFETs

This paper reports the design of a self-powered telemetric wireless sensor node for temperature measurement. The device is realized with a conventional off-the-shelf thermoelectric generator as a power source. It is sandwiched between two aluminum core printed circuit boards (PCBs). One board is exposed to the heat source and has the role of a heat collector, whereas another one with the mounted low profile heatsink acts as a heat spreader. Electronic components of the node are placed on the inner surfaces of the boards. Implemented step-up circuitry is accommodated to achieve stabile cold boot of the node at a low temperature difference between its hot side and ambient (less than 15 °C), even when it is in thermally inefficient position. Operational autonomy of the node in the absence of the heat source is extended by 30% comparing with the common step-up circuitry implementation. The aluminum core PCBs provide node simplicity and compactness, with small overall dimensions.

Thermal Energy Harvesting Wireless Sensor Node in Aluminum Core PCB Technology

The determination of zero temperature coefficient point in CMOS transistors

The static dielectric constant of the heavily doped silicon at room temperature is considered. By using phosphorus as an example, the existing expression for the static dielectric constant at low temperatures is recast into a form suitable for the application at room temperature. This is done by taking into account the contribution of non-ionized impurities at room temperature to the static dielectric constant behavior.

http://www.doiserbia.nb.rs/img/doi/1451-4869/2004/1451-48690402237R.pdf

Zoran Prijić

Papers

Charge-pumping characterization of SiO/sub 2//Si interface in virgin and irradiated power VDMOSFETs

Thermal Energy Harvesting Wireless Sensor Node in Aluminum Core PCB Technology

The determination of zero temperature coefficient point in CMOS transistors

Dependence of static dielectric constant of silicon on resistivity at room temperature

Microstructure and dielectric properties of Dy/Mn doped BaTiO3 ceramics