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Showing papers presented at "Electrical Design of Advanced Packaging and Systems Symposium in 2017"


Proceedings ArticleDOI
Wei Tang1, Tao Shan1, Xunwang Dang1, Maokun Li1, Fan Yang1, Shenheng Xu1, Ji Wu1 
15 Dec 2017
TL;DR: The feasibility of applying deep learning techniques to solve 2D Poisson's equation is investigated, with a significant reduction in CPU time compared with the traditional solver based on finite difference methods.
Abstract: In this work, we investigated the feasibility of applying deep learning techniques to solve 2D Poisson's equation. A deep convolutional neural network is set up to predict the distribution of electric potential in 2D. With training data generated from a finite difference solver, the strong approximation capability of the deep convolutional neural network allows it to make correct prediction given information of the source and distribution of permittivity. Numerical experiments show that the predication error can reach below one percent, with a significant reduction in CPU time compared with the traditional solver based on finite difference methods.

51 citations


Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this article, an antenna array is designed with 2×8 45-degree polarized stacked patches around 28 GHz in low temperature co-fired ceramic (LTCC) for the applications of 5G.
Abstract: An antenna array is designed with 2×8 45-degree polarized stacked patches around 28 GHz in low temperature co-fired ceramic (LTCC) for the applications of the fifth-generation wireless communication (5G) As demonstrated by the measured reflection coefficient and realized gain response, the bandwidth is broadened when compared with single-patch array The proposed antenna-in-package (AiP) can operate from 263 to 298 GHz, with the maximum realized gain of 151 dBi, the 3-dB beamwidth of 11° and the estimated efficiency of 55% Reasonable agreement is achieved between the measured and simulated results The AiP arrays on LTCC show a promising foreground for 5G high-frequency applications

20 citations


Proceedings ArticleDOI
01 Dec 2017
TL;DR: In order to make users obtain the threshold data information in time, the development adds the trigger function in the cloud server, it makes the product more convenient and intelligent.
Abstract: As the development of economic and technology, Internet of Things (IOT) has become an important part of strategic emerging industries, this paper takes into account, small equipment, large coverage area, network data security, low power consumption and so on, A remote monitoring system of temperature and humidity based on OneNet cloud service platform is proposed The STM32F103RCT6 of ARM Cortex-M3 kernel is adopted as the main controller, SIM800C communication module based on authorized frequency band GSM/GPRS cellular communication technology is used, Combining digital temperature and humidity sensor SHT20, real-time and accurate data acquisition is achieved At the same time, data is uploaded to the Internet of things OneNet cloud service platform through the EDP protocol Equipped with WEB services and terminals APP can look at temperature, humidity and power voltage data at anytime, anywhere on the computer, mobile phones and other mobile devices In order to make users obtain the threshold data information in time, the development adds the trigger function in the cloud server, it makes the product more convenient and intelligent

18 citations


Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, a 275-435 GHz high linearity up-conversion mixer for 5G communication is designed and fabricated by standard 65 nm CMOS process, which consists of a double balanced Gilbert cell and a linearized transconductance stage which is used to enhance the mixer linearity.
Abstract: A 275–435 GHz high linearity up-conversion mixer for 5G communication is designed and fabricated by standard 65 nm CMOS process The mixer consists of a double balanced Gilbert cell and a linearized transconductance stage which is used to enhance the mixer linearity In addition, based on the coupled resonators, the input and output baluns implement wide-band impedance matching The mixer achieves IF-port input reflection coefficient less than −10 dB for frequency 97–178 GHz, and RF-port input reflection coefficient less than −10 dB for frequency 343 to 477 GHz The conversion gain is −5 dB to −8 dB within 275–435 GHz LO leakage to the IF port and RF port is less than −43 dB and −40 dB, respectively The mixer realizes an output 1 dB compression point as high as 042 dBm at 38 GHz, while consuming 14 mW from a 1V supply

15 citations


Proceedings ArticleDOI
Hang Jin1, Le Zhang1, Hanzhi Ma1, Sichen Yang1, Xiao-Li Yang1, Er-Ping Li1 
01 Dec 2017
TL;DR: Deep neural network (DNN) and Bayesian optimization algorithm (BOA) based on machine learning are utilized in prediction of EMI radiation, optimization of design parameters and localization of E MI sources.
Abstract: The electromagnetic interference (EMI) problem of extra-high speed electronic devices and systems is becoming more complex with an increase of operating frequency The conventional analysis and design methods could not cope with the current EMI problems Advanced analysis and design methods are desired Deep neural network (DNN) and Bayesian optimization algorithm (BOA) based on machine learning are utilized in prediction of EMI radiation, optimization of design parameters and localization of EMI sources The feasibility of DNN and BOA is investigated and validated The steps of using DNN and BOA are proposed in the paper

14 citations


Proceedings ArticleDOI
Guobing Han1
01 Dec 2017
TL;DR: Simple and fast method of on-board decoupling capacitor(decap) selection and placement is introduced, which can be performed easily based on math tools or general EDA tools and can both simplify the process and achieve good results when finding the optimal solution.
Abstract: Simple and fast method of on-board decoupling capacitor(decap) selection and placement is introduced, which can be performed easily based on math tools or general EDA tools This method is based on simple estimation formula of decap models, and can decide whether specific area needs some decaps or not, and what are the values It can both simplify the process and achieve good results when finding the optimal solution To perform this method, first, prepare the power network S parameters of PCB; second, set up the optimization topology, variables and goals; then perform the optimization by some optimizer; finally, we will get the suggested selection and placement scheme of decaps with the optimal impedance profile Detailed applications of one example case demonstrate the proposed method with reasonable goals achieved

12 citations


Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this article, a compact substrate-integrated waveguide (SIW) filtering power divider with high isolation is presented based on SIW triangular cavities, where an isolation resistance is exploited to achieve high isolation between two output ports.
Abstract: A compact substrate-integrated waveguide (SIW) filtering power divider with high isolation is presented in this paper based on SIW triangular cavities. An isolation resistance is exploited to achieve high isolation between two output ports. The design parameters can be realized by determining proper offset positions of the feeding ports and coupling windows, which can be fixed by the synthesized Qe and M ij . By using three triangular cavities as the basic elements, a filtering power divider is designed and fabricated on a single-layer substrate with the standard printed circuit boards (PCB) process. This filtering power divider operates at the center frequency of 11.4 GHz with the bandwidths of 0.75 GHz. There are good agreements in the simulated and measured results.

12 citations


Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this article, a miniaturized substrate integrated waveguide (SIW) filtering crossover is presented to exploit the orthogonal degenerate TE 201 and TE 102 modes in a SIW square cavity to realize the cross transmission.
Abstract: A miniaturized substrate integrated waveguide (SIW) filtering crossover is presented The design concept is to fully exploit the orthogonal degenerate TE 201 and TE 102 modes in a SIW square cavity to realize the cross transmission, then four TE101-mode cavities are coupled to this square oversized cavity to implement the third-order response and more flexibly controlled bandwidth Benefitting from the employment of the fundamental mode cavities, the footprint of the circuit has been reduced about 35% compared to our previous work A prototype operating at 20 GHz is designed, fabricated, and measured for demonstration, showing excellent agreements between the simulated and measured results

11 citations


Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, a capacitance compensation structure for wire-bonding interconnection in multi-chips module is investigated and the relationship between the structure parameters and the transmission behaviors of the bonding wire is discussed.
Abstract: In this paper, a capacitance compensation structure for wire-bonding interconnection in multi-chips module is investigated. The equivalent circuit model is built to analyze the characteristics of the wire-bonding interconnection. Furthermore, the relationships between the structure parameters and the transmission behaviors of the bonding wire are discussed. In order to meet the impedance matching of the wire-bonding at high frequency, a capacitance compensation structure is presented. In comparison with the uncompensated structure, the parasitic effects of the bonding wire is minimized and the return loss is increased about 20 dB with the proposed design.

9 citations


Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, a compact dual-polarization co-axial antenna with gain greater than 80dBi was presented, operated in 069GHz-096GHz/171GHz-269GHz frequency bands.
Abstract: A new compact dual polarized co-axial antenna with gain greater than 80dBi is presented operated in 069GHz–096GHz/171GHz–269GHz The size of the antenna is 286 × 286 × 81mm3 Its reflection coefficient and the cross-polarization isolation are less than −105dB (−12dB) and higher than 15dB (20dB) in low (high) frequency respectively Measured results are agree well with the simulated one, verifying the availability of this antenna design

7 citations


Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, a dual output dc/dc converter for high efficiency and small form factor in electric bike applications is proposed, which combines a 48-to-12 V converter and a 12-to5 V converter on a single PCB.
Abstract: We propose a dual output dc/dc converter for high efficiency and small form factor in electric bike applications To implement a converter with single input of 48 V and dual output of 5 V and 12 V, we propose the system architecture combined with a 48-to-12 V converter and a 12-to-5 V converter on single PCB The input of the 12-to-5 V is connected to the output of the 48-to-12 V converter to obtain stable 5 V without regard to the battery voltage For high efficiency, both converters use synchronous topologies For small form factor, the switching frequencies of the converters are fixed to 300 kHz and 1 MHz, respectively To minimize undesirable PCB noise, several resistors are added and signal paths are designed shortly The proposed dual output converter was implemented to 45 mm × 42 mm size When the input voltage of 48 V is supplied, the measure efficiency is 875 % under a full-load condition of 31 A at 5 V output and 2 A at 12 V output

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, spoof surface plasmon polariton (SSPPs) and substrate integrated waveguide (SIW) based bandpass filter is proposed, and the results show that the passband is from 115-19 GHz with relative bandwidth of 49% Bandwidth can be controlled by properly adjusting the parameters of the design.
Abstract: In this paper, spoof surface plasmon polariton (SSPPs) and substrate integrated waveguide (SIW) based bandpass filter is proposed The metal strip on the top of the substrate is composed of periodic slots which supports surface wave mode of SPP within the closed substrate integrated waveguide The dispersion relation of the proposed structure shows that it has both low-pass feature of SSP and the high-pass feature of SIW, and hence the combination of these two features leads to a bandpass filter (BPF) The results show that the passband is from 115–19 GHz with relative bandwidth of 49% Bandwidth can be controlled by properly adjusting the parameters of the design The proposed design features a compact size and easy fabrication, due to the integration of SPP in a closed SIW

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this article, the authors presented a compact 14-18 GHz 6-bit attenuator in 035-μm SiGe BiCMOS technology, which adopts serial and shunt single-pole single-throw switches merged with a resistive network to control attenuation accurately.
Abstract: This paper presents a compact 14–18 GHz 6-bit attenuator in 035-μm SiGe BiCMOS technology To realize size miniaturization, large attenuation range and low insertion loss, the switched Pi/T attenuator topology is employed It adopts serial and shunt single-pole-single-throw switches merged with a resistive network to control attenuation accurately In addition, the proposed attenuators use a novel inductive low-pass filter for phase correction to compensate the phase error in difference states The designed prototype achieves an attenuation range of 315 dB in a 05-dB step size with 64 states, average insertion loss of 8±06 dB, P1dB of better than 10 dBm, input/output return losses of better than −10/-11 dB in all states, and chip size of 080×034 mm2 only excluding testing pads The calculated root-mean-square (rms) amplitude error is less than 029 dB, with rms phase error is less than 39o in the designed frequency range

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, a diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed, and the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias V GS of −4V.
Abstract: A diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias V GS of −4V In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, a tunable phase switched screen (PSS) is realized by employing tunable AMC structure, from which the phase of the reflected wave can be switched between zero and π easily at different values of the biased current on the PIN diode, and when the bias current is switched periodically, the PSS is available for radar cloaking.
Abstract: Phase switched screen (PSS) has been proposed for more than a decade years for its application on radar cloaking. However, the PSSs in most publications need a thickness of quarter wavelength to realize perfect cloaking at the frequency point of the incident radar-detecting wave, which seems too thick for engineering. In this work, a new PSS is realized by employing tunable AMC structure, from which the phase of the reflected wave can be switched between zero and π easily at different values of the biased current on the PIN diode, and when the biased current is switched periodically, the PSS is available for radar cloaking. The tunable AMC proposed in this work is with a small thickness (less than Ig/10), but capable of realizing in phase reflection and a nearly out-of-phase at the same frequency point, when the PIN diode is in OFF-state and ON-state respectively; meanwhile, the PSS is available for both TE and TM polarizations.

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this article, the performance improvement in SiGeSn/GeSn p-channel hetero line-tunneling field effect transistor (HL-TFET) via numerical simulation was demonstrated.
Abstract: In this paper, we demonstrate the performance improvement in SiGeSn/GeSn p-channel hetero line-tunneling field-effect transistor (HL-TFET) via numerical simulation The GeSn is located at the pocket region and forms the type-II staggered tunneling junction (TJ) that perpendicular to channel direction with the lattice-matched SiGeSn The HL-TFET demonstrates the smaller onset voltage (V ONSET ), the higher on-state current (I ON ) and the steeper subthreshold swing (SS) in comparison with the GeSn homo Line TFET (L-TFET) and the conventional SiGeSn/GeSn double-gate hetero-TFET (H-TFET) devices The performance enhancement is mainly owing to the larger tunneling area in HL-TFET attributing to the presence of heterojunction and the tunneling junction (TJ) that perpendicular to the channel direction

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this article, a thermoelectric generator (TEG) based on graphene for energy harvesting in 3D ICs is presented. And the generator is then simulated to get the output Seebeck voltage and the I-U character of the TEG.
Abstract: This paper presents an idea of a thermoelectric generator (TEG) based on graphene for energy harvesting in 3D ICs We use encased few-layer graphene as thermoelectric material and stack P-N couples in vertical direction to form the TEG module The module is then simulated to get the output Seebeck voltage and the I-U character of the TEG

Proceedings ArticleDOI
01 Dec 2017
TL;DR: The advantage and reason, including electrical performance, design flexibility and potential cost saving, to adopt a coreless organic substrate in a FCBGA package is described and the design optimization when coreless substrate is implemented is proposed.
Abstract: The advantage and reason, including electrical performance, design flexibility and potential cost saving, to adopt a coreless organic substrate in a FCBGA package is described. Especially, the cross talk and insertion loss comparison analysis between normal thick core and coreless FCBGA is presented, and there is about 10∼20 dB cross talk improvement for the coreless substrate design over the thick core substrate. However, the coreless doesn't has better insertion loss as expectation due to poor impedance control near solderball locations. In this paper, also propose the design optimization when coreless substrate is implemented.

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, a multi-bias transistor model is proposed to characterize the transistor's bias-dependent performance, where the nonlinear drain-source current, the output resistance, and the intrinsic capacitance are fully considered.
Abstract: A multi-bias transistor model is proposed in this paper. The nonlinear drain-source current, the output resistance, and the intrinsic capacitance are fully considered to characterize the transistor's bias-dependent performance. On this basis, the values of the model elements are extracted under different bias conditions. Furthermore, a 90 nm CMOS transistor is fabricated and measured to validate the proposed model. The model calculation results are compared with the measurement results, and the root-mean-square error of the model is below 0.007 up to 66 GHz.

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this article, an electrical-thermal co-analysis method for through silicon via using equivalent circuit model is proposed, where the electrical part is based on analytical methods, taking physical effects such as MOS effect, eddy current into consideration.
Abstract: An electrical-thermal co-analysis method for through silicon via using equivalent circuit model is proposed in this paper. The electrical part is based on analytical methods, taking physical effects such as MOS effect, eddy current into consideration. The thermal part is realized by behavior modeling, which enables this method to perform transient analysis besides stationary analysis. The co-analysis can be conveniently conducted using existing electric circuit solvers. Accuracy and efficiency of the proposed method are demonstrated by comparison of simulation results with commercial software.

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In order to satisfy the requirements on high traffic capacity and high data rate of 5G wireless communications, two wideband RF filters are developed on high-resistivity silicon substrate with MEMS technology for high-frequency base-station applications as discussed by the authors.
Abstract: In order to satisfy the requirements on high traffic capacity and high data rate of 5G wireless communications, two wideband RF filters are developed on high-resistivity silicon substrate with MEMS technology for high-frequency base-station applications A commensurate-line filter is designed for 9 to 15 GHz, with measured in-band insertion loss of 08 dB and return loss of 14 dB A substrate integrated waveguide filter is designed for 25 to 30 GHz The simulated results satisfy the specifications and the measured ones degrade mainly due to the fabrication of bilayer topology, which will be solved in the near future Both of them are with compact size and good frequency selectivity

Proceedings ArticleDOI
Qiwei Zhan1, Rui Zhang, James Baker, Henning Hansen, Qing Huo Liu1 
01 Dec 2017
TL;DR: In this paper, an electrodynamics homogenization method was applied to obtain the equivalent anisotropic model for the complex foamed insulators in modern communication high-speed cables.
Abstract: Foaming the expanded polyethylene (PE) is a prevailing way to lower the dielectric constants and dissipation factors of insulators in modern communication high-speed cables The porosity and elongated cell shapes impose significant effects on the dielectric properties of PE However, a theoretical study is lacking This work proposes an effective way to predict the dielectric parameters of foamed PE Unlike directly generating the extremely dense meshes for the randomly distributed pores, which is usually computationally intractable, we apply an electrodynamics homogenization method to obtain the equivalent anisotropic model for the complex foamed insulators It is shown that the predicted values are amenable to the experimentally measured data

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, a new method is developed to assess the effectiveness of local decoupling capacitors on parallel-plate power and ground conductors, which is based on computing the driving point impedance of a device power pin which serves as a reference in the evaluation of capacitor effectiveness.
Abstract: A new method is developed to assess the effectiveness of local decoupling capacitors on parallel-plate power and ground conductors. The proposed method calculates the loop-inductance of multiple capacitors including their mutual interactions and the effect of power and ground vias. The underlying theory is based on computing the driving point impedance of a device power pin which serves as a reference in the evaluation of capacitor's effectiveness. The accuracy of the proposed method is validated by comparing the results to those from a full-wave electromagnetic simulation.

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, a compact substrate integrated waveguide (SIW) dual-mode dual-band bandpass filter (DM-DBBPF) is presented based on two-layer stacked configuration.
Abstract: A compact substrate integrated waveguide (SIW) dual-mode dual-band bandpass filter (DM-DBBPF) is presented based on two-layer stacked configuration. TE 101 and TE 201 modes in SIW rectangular cavities are exploited to construct the respective first and second passbands, and the two bandwidths could also be realized over a wide range of ratio by applying the design parameters ratio technique. Thanks to multilayered structure, the footprint of the filter has been reduced about 33% compared to our previous similar work. A prototype operating at 12 and 17 GHz with the fractional bandwidth ratio of 0.77 is designed, fabricated, and tested for demonstration, showing good agreements between the simulated and measured results.

Proceedings ArticleDOI
Kyungjun Cho1, Youngwoo Kim1, Hyunsuk Lee1, Gapyeol Park1, Subin Kim1, Kyungjune Son1, Sumin Choi1, Joungho Kim1 
16 Dec 2017
TL;DR: In this paper, the authors proposed and analyzed superior signal and power integrity (SI/PI) designs of embedded multi-die interconnect bridge (EMIB) package substrate considering manufacturing cost and the impact on hierarchical PDN impedance.
Abstract: Silicon interposer with high bandwidth memory (HBM) has been developed to achieve a terabyte/s bandwidth graphic card module. However, silicon interposer still has critical drawbacks regarding the complexity of fabrication and manufacturing cost. Especially, expensive through-silicon-via (TSV) process has become a serious problem for cost reduction. An innovative package substrate called embedded multi-die interconnect bridge (EMIB) becomes alternative solution for memory industries to reduce manufacturing cost and complexity of fabrication process of silicon interposer. Consequently, signal and power integrity (SI/PI) design and analysis of silicon based EMIB package substrate becomes essential, because it will be dominantly affected to HBM interface. In this paper, superior SI designs of EMIB is proposed and analyzed considering manufacturing cost. In addition, the impact on hierarchical PDN impedance due to EMIB is discussed and we proposed further direction for PI improvement. Proposed designs and analysis of EMIB package substrate are expected to be widely adopted in memory industries for next generation HBM interface.

Proceedings ArticleDOI
Boping Wu1
01 Dec 2017
TL;DR: The increased IO density and the improvement of electrical high-speed performance on signal integrity are achievable through this novel integration scheme, where small ceramic elements are embedded and served as interconnect bridges in organic substrate.
Abstract: In this paper, we describe the architecture and performance of a fine pitch multi-chip heterogeneous integration solution using embedded ceramic interconnect bridge (ECIB) in organic substrate package. We present the increased IO density and the improvement of electrical high-speed performance on signal integrity are achievable through this novel integration scheme, where small ceramic elements are embedded and served as interconnect bridges in organic substrate.

Proceedings ArticleDOI
01 Dec 2017
TL;DR: A novel balanced-to-unbalanced filtering power divider using ring resonators is proposed in this paper, where even/odd-mode analysis method is applied to deduce the design equations at the operating frequency.
Abstract: A novel balanced-to-unbalanced filtering power divider using ring resonators is proposed Due to the symmetry of the circuit model, even/odd-mode analysis method is applied to deduce the design equations at the operating frequency The ring resonators can bring two transmission zeros in each side of the passband for differential-mode, which can improve frequency selectivity and out-of-band suppression A fabricated prototype (e r = 265, h = 1 mm, tan δ = 0003) with 4-dB bandwidth of 125% is designed and measured to prove the proposed methods

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this paper, a 1D high-temperature superconductor (HTS) microstrip bandstop electromagnetic band-gap (EBG) structure is proposed to reduce the ripple level in the passband full-wave simulation results show the HTS structure has much slighter attenuation in passband and larger suppression in stopband than the copper one.
Abstract: In this paper, a novel 1-D high-temperature superconductor (HTS) microstrip bandstop electromagnetic band-gap (EBG) structure is proposed Tapering technology is used to reduce the ripple level in the passband Full-wave simulation results show the HTS structure has much slighter attenuation in passband and larger suppression in stopband than the copper one, which shows its good prospect in HTS microwave applications

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this article, the authors proposed a novel differential feed antenna element for millimeter wave communication system, which consists of a spatial parallel radiation patch and the microstrip differential feed to widen the impedance bandwidth of the antenna element.
Abstract: This paper proposes a novel differential feed antenna element for millimeter wave communication system. The antenna consists of a spatial parallel radiation patch and the microstrip differential feed to widen the impedance bandwidth of the antenna element, using four metal columns to improve the match between the microstrip and the radiation patch. Simulated results indicate the designed antenna achieved a notably wide bandwidth and high isolation. Moreover, the antenna has stable radiation patterns with half-power beam width of 65 degree on the horizontal plane and a top gain of 7.1 dBi over the operating band. This antenna is suitable for micro base station in 5G millimeter wave communication system.

Proceedings ArticleDOI
01 Dec 2017
TL;DR: In this article, a brief review regarding the theory, design methodologies and applications of the zero index metamaterial (ZIM) is given, with special focus on two major applications of ZIMs, including the energy tunneling and the beam focusing.
Abstract: A brief review regarding the theory, design methodologies and applications of the zero index metamaterial(ZIM) is given. Special focuses are laid on two major applications of ZIMs, including the energy tunneling and the beam focusing. Moreover, a comparison of antennas utilizing ZIMs and their performance is presented.