European Microwave Integrated Circuit Conference
About: European Microwave Integrated Circuit Conference is an academic conference. The conference publishes majorly in the area(s): Amplifier & CMOS. Over the lifetime, 624 publications have been published by the conference receiving 4063 citations.
Topics: Amplifier, CMOS, Monolithic microwave integrated circuit, High-electron-mobility transistor, RF power amplifier
••01 Oct 2008
TL;DR: In this paper, a new approach to X-parameter characterization and nonlinear simulation, including large-signal experimental model validation, of a commercially available GSM amplifier is described.
Abstract: X-parameters, also referred to as the parameters of the Poly-Harmonic Distortion (PHD) nonlinear behavioral model, have been introduced as the natural extension of S-parameters to nonlinear devices under large-signal drive -. This paper describes a new approach to X-parameter characterization and nonlinear simulation - including large-signal experimental model validation - of a commercially available GSM amplifier. A specially configured Nonlinear Vector Network Analyzer (NVNA) and procedure for measuring, for the first time, X-parameters under pulsed bias conditions is presented. The measured pulsed bias X-parameters are then used with the PHD framework to enable accurate nonlinear simulation of device behavior, including harmonics (magnitude and phase) under pulsed bias large-signal conditions with mismatch. Independent NVNA measurements validate the predictions of the X-parameter simulations of output match under drive, and show the inadequacy of "Hot S22" techniques to predict such device performance.
••01 Oct 2008
TL;DR: In this paper, a T/R-module front-end with mounted GaN MMICs is designed based on a multilayer LTCC technology for X-band antennas.
Abstract: Amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the bases of novel AlGaN/GaN HEMT structures. Both, low noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high power amplifier (HPA) are measured. The measured noise figure of the low noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multilayer LTCC technology.
•01 Oct 2012
TL;DR: This paper describes a 120-GHz-band quadrature phase shift keying (QPSK) transmitter and receiver fabricated on microwave monolithic integrated circuits (MMICs) that can handle 20-Gbit/s data streams.
Abstract: This paper describes a 120-GHz-band quadrature phase shift keying (QPSK) transmitter and receiver fabricated on microwave monolithic integrated circuits (MMICs). The MMICs were fabricated using 0.1-µm-gate InP HEMTs and can handle 20-Gbit/s data streams. The transmitter MMIC consists of a QPSK modulator with direct modulation, differential amplifiers for data, a power amplifier, and an output-power monitor circuit. A differentially coherent detector, voltage-controlled phase shifter, and low-noise amplifier are monolithically integrated on a receiver MMIC. The QPSK transmitter and receiver MMICs were mounted in WR-8 waveguide modules to evaluate the data transmission performance. The bit error rate (BER) for 22.2-Gbit/s pseudorandom binary sequence (PRBS) 27−1 data is smaller than 10−10 at a receiver power of −35 dBm.
26 Dec 2007
TL;DR: In this article, the authors developed a kW-class AlGaN/GaN HEMT pallet amplifier operating at S-band with output power of over 800 W, high linear gain of 13.6dB and high efficiency of 52% over the wide frequency range of 2.9-3.3 GHz.
Abstract: We developed a kW-class AlGaN/GaN HEMT pallet amplifier operating at S-band. The pallet amplifier consists of an internally partial-matched AlGaN/GaN HEMT optimized for S-band on a copper base with soft PC boards. The developed pallet amplifier showed excellent performance, which is output power of over 800 W, high linear gain of 13.6dB and high efficiency of 52% over the wide frequency range of 2.9-3.3 GHz, operating at 65 V drain voltage with the pulsed condition at a duty of 10% and a pulse width of 200 musec. With 80 V drain voltage operation the peak power reached to 1 kW with 49.5% drain efficiency and 14.1 dB linear gain at 3.2 GHz. To the best of our knowledge, this is the highest power pallet amplifier ever reported for S-band.
••29 Dec 2014
TL;DR: In this article, a metamorphic high electron mobility transistor (mHEMT) with 20 nm gate length for manufacturing of terahertz monolithic integrated circuits (TMICs) is presented.
Abstract: A metamorphic high electron mobility transistor (mHEMT) technology with 20 nm gate length for manufacturing of terahertz monolithic integrated circuits (TMICs) is presented. The passive elements include up to four interconnection metallization layers separated by low-k dielectrics (BCB), SiN and air which can be used to realize front side signal lines. Shielding the substrate from the electromagnetic field on the wafer front side eliminates the need of a costly back side process including wafer thinning, through substrate via etching and back side metallization. The semiconductor heterostructure of the mHEMT comprises a strained pure InAs channel with high electron mobility and high electron density for proper device scaling. The realized mHEMTs achieve a source resistance rS of 0.12 Ωmm which is required to minimize resistive losses in combination with an extrinsic maximum transconductance gm_max of 2850 mS/mm. Elaborated on wafer calibration procedures and optimized test transistor layouts were used to improve the precision of the S-parameter measurements up to a frequency of 450 GHz which than could be used for model extraction. The presented 20 nm mHEMT technology was employed for the design of a compact eight stage low-noise amplifier (LNA) using miniaturized microstrip lines on BCB. The measured small signal gain of the LNA exceeds 15 dB from 500-635 GHz.