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Conference

International Power Modulator Symposium 

About: International Power Modulator Symposium is an academic conference. The conference publishes majorly in the area(s): Pulse generator & High voltage. Over the lifetime, 381 publications have been published by the conference receiving 1957 citations.

Papers published on a yearly basis

Papers
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Proceedings ArticleDOI
14 May 2006
TL;DR: It is shown that 40 kV/cm electric field pulses 300 nanoseconds in duration can rapidly stimulate pyknosis, reduce blood flow and fragment DNA in murine melanoma tumors in vivo with a total field exposure time of 1.8 microseconds.
Abstract: Nanosecond pulsed electric fields (nsPEF) have been shown to penetrate into living cells to permeabilize intracellular organelles and release Ca2+ from the endoplasmic reticulum. They provide a new approach for physically targeting intracellular organelles with many applications, including initiation of apoptosis, enhancement of gene transfection efficiency and inhibiting tumor growth. We have been working with the murine melanoma model system and here we show that 40 kV/cm electric field pulses 300 nanoseconds in duration can rapidly stimulate pyknosis, reduce blood flow and fragment DNA in murine melanoma tumors in vivo with a total field exposure time of 1.8 microseconds. Three treatments of 100 pulses each results in a mean tumor size regression of 90% within two weeks. Another round of treatments at this time can completely eliminate the melanoma. This new therapy is the first to simultaneously trigger pyknosis and reduce tumor blood flow.

147 citations

Proceedings ArticleDOI
22 Jun 1998
TL;DR: Power Electronic Building Blocks (PEBBs) as discussed by the authors are power processors that can be used to perform a wide range of electrical, mechanical, and thermal functions in a power system.
Abstract: Power Electronic Building Blocks (PEBBs) are power processors. A PEBB is not a specific semiconductor material, not a device, nor a circuit topology. It is the search for the common electrical, mechanical and thermal denominators of all these, allowing integration of all these technologies. It is not; "one size fits all". There will be several blocks that will fit together to perform the majority of everyday power electronic jobs. Like a set of children's interlocking blocks, PEBBs will be a rational and simple set of blocks and procedures that most any designer or architect can use to build electrical systems. The Office of Naval Research (ONR) is developing Power Electronic Building Blocks to achieve: increased power density, "user friendly" design ("plug and play" power modules), and multi-functionality. Digital controls, integrated with higher frequency and more robust power circuits, enable modular power systems with lower size, weight, and cost-while increasing performance. Although the day when solid-state will replace tubes in high-power modulator applications is still in the future, many near-term opportunities exist for PEBBs and associated technologies. This paper presents requirements, opportunities and issues for standardized power modules. First, an overview of the PEBB program is given. Then, opportunities are examined for technologies developed by the PEBB program.

89 citations

Proceedings ArticleDOI
26 Jun 2000
TL;DR: In this article, the authors discuss aspects of the integration of rail-gun capability into a future destroyer with an integrated power system and discuss the benefits of such a capability for the future ship.
Abstract: Secretary of the Navy Richard Danzig announced on Jan. 6 that the Land Attack Destroyer (DD 21) will be the US Navy's first class of ships designed and built with electric drive featuring an integrated power architecture. In addition to supporting the needs of DD 21, this power system architecture was described as a future technology enabler for advanced energy sources and ship capabilities. The warfighting benefit of one such capability, rail guns, was recently evaluated by the CNO's Strategic Studies Group. This paper discusses aspects of the integration of such a capability into a future destroyer with an integrated power system.

70 citations

Proceedings ArticleDOI
27 Jun 1994
TL;DR: In this article, a novel modulator has been designed, built and tested for the TESLA test facility, which uses superconducting RF cavities and requires 2ms of RF power at 10 pps.
Abstract: A novel modulator has been designed, built and tested for the TESLA test facility. This e{sup +} e{sup {minus}} accelerator concept uses superconducting RF cavities and requires 2ms of RF power at 10 pps. As the final accelerator will require several hundred modulators, a cost effective, space saving and high efficiency design is desired. This modulator used a modest size switched capacitor bank that droops approximately 20% during the pulse. This large droop is compensated for by the use of a resonant LC circuit. The capacitor bank is connected to the high side of a pulse transformer primary using a series GTO switch. The resonant circuit is connected to the low side of the pulse transformer primary. The output pulse is flat to within 1% for 1.9 ms during a 2.3 ms base pulse width. Measured efficiency, from breaker to klystron and including energy lost in the rise time, is approximately 85%.

60 citations

Journal ArticleDOI
14 May 2006
TL;DR: In this article, Vanadium compensated, semi-insulating, 6H-SiC substrates were fabricated on "a" plane, and optically exciting deep extrinsic levels lying within the SiC bandgap.
Abstract: Semi-insulating Silicon Carbide (SiC) is an attractive material to use to construct high voltage, compact, photoconducting semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity, and high thermal conductivity. The critical field strength of 3 MV/cm of 6H-SiC makes it particularly attractive for compact, high voltage, fast switching applications such as a Dielectric Wall Accelerator (DWA). To realize the benefits of the high bulk electric field strength of SiC and diffuse switch current, carriers must be excited throughout the bulk of the photo switch. Photoconducting switches with opposing electrodes were fabricated on "a" plane, Vanadium compensated, semi-insulating, 6H-SiC substrates. The PCSS devices were switched by optically exciting deep extrinsic levels lying within the 6H-SiC bandgap. The SiC photoswitches were tested up to a bias voltage of 11000 V with a corresponding peak current of 150 A. The 6H-SiC substrates withstood average electric fields up to 27 MV/m. Minimum PCCS dynamic resistances of 2 and 10 Ohms were obtained with 13 mJ optical pulses at 532 and 1064 nm wavelengths, respectively.

55 citations

Performance
Metrics
No. of papers from the Conference in previous years
YearPapers
2006144
200046
199862
199657
199472