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Conference

International Workshop on Active-Matrix Flatpanel Displays and Devices 

About: International Workshop on Active-Matrix Flatpanel Displays and Devices is an academic conference. The conference publishes majorly in the area(s): Thin-film transistor & Thin film. Over the lifetime, 541 publications have been published by the conference receiving 762 citations.

Papers published on a yearly basis

Papers
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Proceedings Article
02 Jul 2013
TL;DR: In this article, the authors focus on the relationship between potential induced degradation and characteristics of anti-reflection coating (ARC) and demonstrate that ARC had a property of high conductivity and low oxygen concentration.
Abstract: This paper is focusing on a relationship between potential induced degradation (PID) and characteristics of anti-reflection coating (ARC). The module, which has an ARC deposited by plasma-enhanced chemical vapor deposition (PE-CVD) from Shimadzu Corporation, indicated high resistance to PID with keeping conventional refractive index. This ARC had a property of high conductivity and low oxygen concentration.

29 citations

Proceedings Article
02 Jul 2013
TL;DR: In this paper, the authors introduce the actual situation how the research and development of the new field was pushed forward through the process of the liquid crystalline study related to my experience and discuss about the future trends of the image electronics based on the human being's peculiar characteristics of the input and output ability.
Abstract: Electronic displays, especially the liquid crystal displays (LCDs), have made significant progress. I introduce the actual situation how the research and development of the new field was pushed forward through the process of the liquid crystalline study related to my experience. In addition, I discuss about the future trends of the image electronics based on the human being's peculiar characteristics of the input and output ability.

23 citations

Proceedings Article
04 Jul 2017
TL;DR: Wang et al. as mentioned in this paper developed highly transparent color liquid crystal display (LCD) using newly developed scattering-type liquid crystal, which shows transparent state when voltage is not applied, with field sequential color (FSC) driving method without employing color filter and polarizer.
Abstract: We have developed highly transparent color liquid crystal display (LCD) using newly developed scattering-type liquid crystal, which shows transparent state when voltage is not applied, with field sequential color (FSC) driving method without employing color filter and polarizer. Furthermore the light is directly introduced to the panel glass substrates from the edge of the substrates (not from back surface). At surface of the substrates, the light takes a total reflection and propagates through the substrate. On the other hand, when a voltage higher than a threshold voltage (Vth) is applied to liquid crystal (LC) layer, the light is scattered towards the viewers. This newly developed display has high transmittance (80 %), wide color gamut and fast response time.

21 citations

Proceedings Article
04 Jul 2017
TL;DR: The background of this technology, the principle of focus-free imaging, the device with a trademark of RETISSA®, and its laser safety analyses based on international guidelines and standards are described.
Abstract: Retinal Imaging Laser Eyewear has a miniature laser projector inside the frame which provides the wearer with digital image information through the pupil using the retina as a screen. This compact universal-design eyewear features focus-free and augmented-reality image independent of the wearers' visual acuity and point of focus. This paper describes the background of this technology, the principle of focus-free imaging, the device with a trademark of RETISSA®, and its laser safety analyses based on international guidelines and standards.

14 citations

Proceedings Article
02 Jul 2013
TL;DR: In this paper, the In-Ga-Zn-O thin film was analyzed with nano-beam electron diffraction (NBED) and it was found that crystals which are not aligned in a certain direction exist in the InGa-zn-oxide thin film unlike in an amorphous structure.
Abstract: In-Ga-Zn-O thin films formed by a sputtering method, in which distinct crystallinity was not observed by selected area electron diffraction (SAED), were analyzed with nano-beam electron diffraction (NBED). As a result, upon analysis on an about 10-nm-thick area of a sample with the use of a beam with an irradiation area of 1 nmφ, we have found that crystals which are not aligned in a certain direction exist in the In-Ga-Zn-O thin film unlike in an amorphous structure. Further, a result of comparison between NBED measurement results and electron-beam diffraction simulation results has suggested that the In-Ga-Zn-O thin film has a structure different from an amorphous structure and is a group of nano-crystals of In-Ga-Zn-O (nc-IGZOs) with a size of 1.0 nm to 3.0 nm not aligned in a certain direction.

14 citations

Performance
Metrics
No. of papers from the Conference in previous years
YearPapers
202259
20212
202014
201928
201838
201738