Example of Solid-State Electronics format
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Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format
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Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format Example of Solid-State Electronics format
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Solid-State Electronics — Template for authors

Publisher: Elsevier
Categories Rank Trend in last 3 yrs
Materials Chemistry #115 of 292 down down by 26 ranks
Electrical and Electronic Engineering #291 of 693 down down by 87 ranks
Condensed Matter Physics #188 of 411 down down by 35 ranks
Electronic, Optical and Magnetic Materials #121 of 246 down down by 37 ranks
journal-quality-icon Journal quality:
Good
calendar-icon Last 4 years overview: 687 Published Papers | 2216 Citations
indexed-in-icon Indexed in: Scopus
last-updated-icon Last updated: 17/07/2020
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Related Journals

open access Open Access

Elsevier

Quality:  
High
CiteRatio: 6.5
SJR: 0.888
SNIP: 0.744
open access Open Access

IEEE

Quality:  
High
CiteRatio: 4.4
SJR: 0.732
SNIP: 1.305
open access Open Access

IEEE

Quality:  
High
CiteRatio: 7.2
SJR: 1.023
SNIP: 1.249

Journal Performance & Insights

CiteRatio

SCImago Journal Rank (SJR)

Source Normalized Impact per Paper (SNIP)

A measure of average citations received per peer-reviewed paper published in the journal.

Measures weighted citations received by the journal. Citation weighting depends on the categories and prestige of the citing journal.

Measures actual citations received relative to citations expected for the journal's category.

3.2

6% from 2019

CiteRatio for Solid-State Electronics from 2016 - 2020
Year Value
2020 3.2
2019 3.4
2018 3.5
2017 3.1
2016 3.4
graph view Graph view
table view Table view

0.457

2% from 2019

SJR for Solid-State Electronics from 2016 - 2020
Year Value
2020 0.457
2019 0.468
2018 0.421
2017 0.492
2016 0.544
graph view Graph view
table view Table view

0.863

3% from 2019

SNIP for Solid-State Electronics from 2016 - 2020
Year Value
2020 0.863
2019 0.886
2018 0.852
2017 0.926
2016 0.986
graph view Graph view
table view Table view

insights Insights

  • CiteRatio of this journal has decreased by 6% in last years.
  • This journal’s CiteRatio is in the top 10 percentile category.

insights Insights

  • SJR of this journal has decreased by 2% in last years.
  • This journal’s SJR is in the top 10 percentile category.

insights Insights

  • SNIP of this journal has decreased by 3% in last years.
  • This journal’s SNIP is in the top 10 percentile category.

Solid-State Electronics

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Elsevier

Solid-State Electronics

It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design, (2) opti...... Read More

Materials Chemistry

Electrical and Electronic Engineering

Electronic, Optical and Magnetic Materials

Condensed Matter Physics

Materials Science

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Last updated on
17 Jul 2020
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ISSN
0038-1101
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Impact Factor
High - 1.259
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Open Access
No
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Sherpa RoMEO Archiving Policy
Green faq
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Plagiarism Check
Available via Turnitin
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Endnote Style
Download Available
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Bibliography Name
elsarticle-num
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Citation Type
Numbered
[25]
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Bibliography Example
Blonder GE, Tinkham M, Klapwijk TM. Transition from metallic to tunneling regimes in supercon- ducting microconstrictions: Excess current, charge imbalance, and supercurrent conversion. Phys Rev B. 1982;25(7):4515_x0015_4532. Available from: 10.1103/PhysRevB.25.4515.

Top papers written in this journal

Journal Article DOI: 10.1016/0038-1101(62)90111-9
An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
01 Sep 1962 - Solid-state Electronics

Abstract:

A new solid-state device, the M-O-S diode, of which an oxidized silicon surface is an integral part, is introduced, and a theory for its operation in the absence of surface states is obtained. The capacitance of this device may be considerably more voltage sensitive than that of a p-n junction. The existence of surface states... A new solid-state device, the M-O-S diode, of which an oxidized silicon surface is an integral part, is introduced, and a theory for its operation in the absence of surface states is obtained. The capacitance of this device may be considerably more voltage sensitive than that of a p-n junction. The existence of surface states with non-zero relaxation times is introduced into the theoretical model. It is shown that the states may increase the capacitance of the device, as well as affect the proportion of applied voltage which appears across the silicon. A small-signal equivalent circuit is derived which includes the effect of the surface states. It is also shown that a comparison of the theoretical capacitance vs. voltage curve without states and a measured high-frequency capacitance vs. voltage curve may be used to obtain the distribution of all states, regardless of their time constants. Results are given of measurements and calculations on two M-O-S diodes having different surface treatments before oxidation. Both surfaces have a total density of about 3 × 10 12 states/cm 2 . In both cases, the distribution of states is continuous and has its highest peak about 100 mV above E F (0), the position of the Fermi level at the silicon surface if there is no voltage drop across the silicon The time constants of the states extend from 10 −8 sec to longer than 10 −2 sec. There is a tendency for states located at deeper energy levels to have longer time constants, but some of the states in the high density of states above E F (0) have long time constants. The distribution of time constants with energy level is somewhat different for the two surfaces. A comparison is made between the distribution of states obtained here with the distribution reported by others working in the field. The results are similar in density and location of the peaks of the distribution reported here, but differ in that some other sources report a discrete distribution. read more read less

Topics:

Surface states (58%)58% related to the paper, Silicon (55%)55% related to the paper, Capacitance (54%)54% related to the paper, Diode (52%)52% related to the paper, Fermi level (51%)51% related to the paper
1,331 Citations
Journal Article DOI: 10.1016/0038-1101(66)90097-9
Field and thermionic-field emission in Schottky barriers
F.A. Padovani1, R. Stratton1
01 Jul 1966 - Solid-state Electronics

Abstract:

Field emission and thermionic-field (T-F) emission are considered as the phenomena responsible for the excess currents observed both in the forward and reverse directions of Schottky barriers formed on highly doped semiconductors. Voltage-current characteristics are derived for field and thermionic-field emission in the forwa... Field emission and thermionic-field (T-F) emission are considered as the phenomena responsible for the excess currents observed both in the forward and reverse directions of Schottky barriers formed on highly doped semiconductors. Voltage-current characteristics are derived for field and thermionic-field emission in the forward and reverse regime. The temperatures and voltages where these phenomena are predominent for a given diode are discussed. Comparison with experimental results on GaAs and Si diodes shows good agreement between theory and experiments. read more read less

Topics:

Schottky effect (63%)63% related to the paper, Schottky barrier (60%)60% related to the paper, Schottky diode (59%)59% related to the paper, Metal–semiconductor junction (57%)57% related to the paper, Field electron emission (57%)57% related to the paper
1,268 Citations
Journal Article DOI: 10.1016/0038-1101(96)00045-7
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady1, R.W. Johnson1
01 Oct 1996 - Solid-state Electronics

Abstract:

Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 199... Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995. read more read less

Topics:

Micropipe (61%)61% related to the paper, Silicon carbide (57%)57% related to the paper, Power semiconductor device (54%)54% related to the paper, Wide-bandgap semiconductor (52%)52% related to the paper, Power density (52%)52% related to the paper
1,249 Citations
Journal Article DOI: 10.1016/0038-1101(77)90054-5
A review of some charge transport properties of silicon
01 Feb 1977 - Solid-state Electronics

Abstract:

This paper reviews the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices. Therefore, most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties. Phenomenological expressions are... This paper reviews the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices. Therefore, most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties. Phenomenological expressions are given, when possible, for the most important transport quantities as functions of temperature, field or impurity concentration. The discussion is limited to bulk properties, with only a few comments on surface transport. read more read less
1,067 Citations
Journal Article DOI: 10.1016/0038-1101(62)90115-6
Experiments on Ge-GaAs heterojunctions
R.L. Anderson1
IBM1
01 Sep 1962 - Solid-state Electronics

Abstract:

The electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described. I–V and electro-optical characteristics are consistent with a model in which the conduction- and valence-band edges at the interface are discontinuous. The forbidden band in heavily doped (n-type) ge... The electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described. I–V and electro-optical characteristics are consistent with a model in which the conduction- and valence-band edges at the interface are discontinuous. The forbidden band in heavily doped (n-type) germanium appears to shift to lower energy values. read more read less

Topics:

Heterojunction (55%)55% related to the paper, Germanium (54%)54% related to the paper, Doping (51%)51% related to the paper, Anderson's rule (51%)51% related to the paper
970 Citations
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Solid-State Electronics format uses elsarticle-num citation style.

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Frequently asked questions

1. Can I write Solid-State Electronics in LaTeX?

Absolutely not! Our tool has been designed to help you focus on writing. You can write your entire paper as per the Solid-State Electronics guidelines and auto format it.

2. Do you follow the Solid-State Electronics guidelines?

Yes, the template is compliant with the Solid-State Electronics guidelines. Our experts at SciSpace ensure that. If there are any changes to the journal's guidelines, we'll change our algorithm accordingly.

3. Can I cite my article in multiple styles in Solid-State Electronics?

Of course! We support all the top citation styles, such as APA style, MLA style, Vancouver style, Harvard style, and Chicago style. For example, when you write your paper and hit autoformat, our system will automatically update your article as per the Solid-State Electronics citation style.

4. Can I use the Solid-State Electronics templates for free?

Sign up for our free trial, and you'll be able to use all our features for seven days. You'll see how helpful they are and how inexpensive they are compared to other options, Especially for Solid-State Electronics.

5. Can I use a manuscript in Solid-State Electronics that I have written in MS Word?

Yes. You can choose the right template, copy-paste the contents from the word document, and click on auto-format. Once you're done, you'll have a publish-ready paper Solid-State Electronics that you can download at the end.

6. How long does it usually take you to format my papers in Solid-State Electronics?

It only takes a matter of seconds to edit your manuscript. Besides that, our intuitive editor saves you from writing and formatting it in Solid-State Electronics.

7. Where can I find the template for the Solid-State Electronics?

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8. Can I reformat my paper to fit the Solid-State Electronics's guidelines?

Of course! You can do this using our intuitive editor. It's very easy. If you need help, our support team is always ready to assist you.

9. Solid-State Electronics an online tool or is there a desktop version?

SciSpace's Solid-State Electronics is currently available as an online tool. We're developing a desktop version, too. You can request (or upvote) any features that you think would be helpful for you and other researchers in the "feature request" section of your account once you've signed up with us.

10. I cannot find my template in your gallery. Can you create it for me like Solid-State Electronics?

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11. What is the output that I would get after using Solid-State Electronics?

After writing your paper autoformatting in Solid-State Electronics, you can download it in multiple formats, viz., PDF, Docx, and LaTeX.

12. Is Solid-State Electronics's impact factor high enough that I should try publishing my article there?

To be honest, the answer is no. The impact factor is one of the many elements that determine the quality of a journal. Few of these factors include review board, rejection rates, frequency of inclusion in indexes, and Eigenfactor. You need to assess all these factors before you make your final call.

13. What is Sherpa RoMEO Archiving Policy for Solid-State Electronics?

SHERPA/RoMEO Database

We extracted this data from Sherpa Romeo to help researchers understand the access level of this journal in accordance with the Sherpa Romeo Archiving Policy for Solid-State Electronics. The table below indicates the level of access a journal has as per Sherpa Romeo's archiving policy.

RoMEO Colour Archiving policy
Green Can archive pre-print and post-print or publisher's version/PDF
Blue Can archive post-print (ie final draft post-refereeing) or publisher's version/PDF
Yellow Can archive pre-print (ie pre-refereeing)
White Archiving not formally supported
FYI:
  1. Pre-prints as being the version of the paper before peer review and
  2. Post-prints as being the version of the paper after peer-review, with revisions having been made.

14. What are the most common citation types In Solid-State Electronics?

The 5 most common citation types in order of usage for Solid-State Electronics are:.

S. No. Citation Style Type
1. Author Year
2. Numbered
3. Numbered (Superscripted)
4. Author Year (Cited Pages)
5. Footnote

15. How do I submit my article to the Solid-State Electronics?

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16. Can I download Solid-State Electronics in Endnote format?

Yes, SciSpace provides this functionality. After signing up, you would need to import your existing references from Word or Bib file to SciSpace. Then SciSpace would allow you to download your references in Solid-State Electronics Endnote style according to Elsevier guidelines.

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