Example of IEEE Journal of the Electron Devices Society format
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Example of IEEE Journal of the Electron Devices Society format Example of IEEE Journal of the Electron Devices Society format Example of IEEE Journal of the Electron Devices Society format Example of IEEE Journal of the Electron Devices Society format Example of IEEE Journal of the Electron Devices Society format
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Example of IEEE Journal of the Electron Devices Society format Example of IEEE Journal of the Electron Devices Society format Example of IEEE Journal of the Electron Devices Society format Example of IEEE Journal of the Electron Devices Society format Example of IEEE Journal of the Electron Devices Society format
Sample paper formatted on SciSpace - SciSpace
This content is only for preview purposes. The original open access content can be found here.
open access Open Access

IEEE Journal of the Electron Devices Society — Template for authors

Publisher: IEEE
Categories Rank Trend in last 3 yrs
Electrical and Electronic Engineering #251 of 693 down down by 137 ranks
Electronic, Optical and Magnetic Materials #99 of 246 down down by 52 ranks
Biotechnology #129 of 282 down down by 62 ranks
journal-quality-icon Journal quality:
Good
calendar-icon Last 4 years overview: 612 Published Papers | 2278 Citations
indexed-in-icon Indexed in: Scopus
last-updated-icon Last updated: 03/06/2020
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Insights
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Top papers
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FAQ

Related Journals

open access Open Access
recommended Recommended

American Chemical Society

Quality:  
High
CiteRatio: 13.2
SJR: 2.735
SNIP: 1.692
open access Open Access

Elsevier

Quality:  
Good
CiteRatio: 3.7
SJR: 0.465
SNIP: 0.979
open access Open Access
recommended Recommended

IEEE

Quality:  
High
CiteRatio: 10.2
SJR: 1.293
SNIP: 2.448

Journal Performance & Insights

CiteRatio

SCImago Journal Rank (SJR)

Source Normalized Impact per Paper (SNIP)

A measure of average citations received per peer-reviewed paper published in the journal.

Measures weighted citations received by the journal. Citation weighting depends on the categories and prestige of the citing journal.

Measures actual citations received relative to citations expected for the journal's category.

3.7

9% from 2019

CiteRatio for IEEE Journal of the Electron Devices Society from 2016 - 2020
Year Value
2020 3.7
2019 3.4
2018 3.8
2017 4.7
2016 3.9
graph view Graph view
table view Table view

0.69

6% from 2019

SJR for IEEE Journal of the Electron Devices Society from 2016 - 2020
Year Value
2020 0.69
2019 0.736
2018 0.643
2017 1.016
2016 1.179
graph view Graph view
table view Table view

1.109

4% from 2019

SNIP for IEEE Journal of the Electron Devices Society from 2016 - 2020
Year Value
2020 1.109
2019 1.155
2018 1.182
2017 1.465
2016 2.155
graph view Graph view
table view Table view

insights Insights

  • CiteRatio of this journal has increased by 9% in last years.
  • This journal’s CiteRatio is in the top 10 percentile category.

insights Insights

  • SJR of this journal has decreased by 6% in last years.
  • This journal’s SJR is in the top 10 percentile category.

insights Insights

  • SNIP of this journal has decreased by 4% in last years.
  • This journal’s SNIP is in the top 10 percentile category.

IEEE Journal of the Electron Devices Society

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IEEE

IEEE Journal of the Electron Devices Society

Approved by publishing and review experts on SciSpace, this template is built as per for IEEE Journal of the Electron Devices Society formatting guidelines as mentioned in IEEE author instructions. The current version was created on 03 Jun 2020 and has been used by 954 authors to write and format their manuscripts to this journal.

Engineering

i
Last updated on
03 Jun 2020
i
ISSN
2168-6734
i
Open Access
No
i
Sherpa RoMEO Archiving Policy
Green faq
i
Plagiarism Check
Available via Turnitin
i
Endnote Style
Download Available
i
Bibliography Name
IEEEtran
i
Citation Type
Numbered
[25]
i
Bibliography Example
C. W. J. Beenakker, “Specular andreev reflection in graphene,” Phys. Rev. Lett., vol. 97, no. 6, p.

Top papers written in this journal

open accessOpen access Journal Article DOI: 10.1109/JEDS.2014.2326622
Tunnel Field-Effect Transistors: State-of-the-Art
Hao Lu1, Alan Seabaugh1

Abstract:

Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by comparing experimental results and theoretical predictions against 16-nm FinFET CMOS technology. Experiments lag the projections, but sub-threshold swings less than 60 mV/decade are now reported in 14 TFETs. The lowest measured sub-threshold... Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by comparing experimental results and theoretical predictions against 16-nm FinFET CMOS technology. Experiments lag the projections, but sub-threshold swings less than 60 mV/decade are now reported in 14 TFETs. The lowest measured sub-threshold swings approaches 20 mV/decade, however, the measurements at these lowest values are not based on many points. The highest current at which sub-threshold swing below 60 mV/decade is observed is in the range 1–10 nA/ \({{\mu }}\) m. A common approach to TFET characterization is proposed to facilitate future comparisons. read more read less
529 Citations
open accessOpen access Journal Article DOI: 10.1109/JEDS.2014.2306412
A Review of the Pinned Photodiode for CCD and CMOS Image Sensors
Eric R. Fossum1, Donald Hondongwa1

Abstract:

The pinned photodiode is the primary photodetector structure used in most CCD and CMOS image sensors. This paper reviews the development, physics, and technology of the pinned photodiode. The pinned photodiode is the primary photodetector structure used in most CCD and CMOS image sensors. This paper reviews the development, physics, and technology of the pinned photodiode. read more read less

Topics:

Photodiode (58%)58% related to the paper, CMOS sensor (57%)57% related to the paper
View PDF
364 Citations
open accessOpen access Journal Article DOI: 10.1109/JEDS.2015.2390591
Tunnel Field-Effect Transistors: Prospects and Challenges
Uygar E. Avci1, Daniel H. Morris1, Ian A. Young1

Abstract:

The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage ( $\mathrm{V}_{\rm DD}$ ). In this paper, using atomistic quantum models that are in agreement with experimental TFET devices, we are reviewing TFE... The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage ( $\mathrm{V}_{\rm DD}$ ). In this paper, using atomistic quantum models that are in agreement with experimental TFET devices, we are reviewing TFETs prospects at $\mathrm{L}_{\rm G}= 13$ nm node together with the main challenges and benefits of its implementation. Significant power savings at iso-performance to CMOS are shown for GaSb/InAs TFET, but only for performance targets which use lower than conventional $\mathrm{V}_{\rm DD}$ . Also, P-TFET current-drive is between $1\times $ to $0.5\times $ of N-TFET, depending on choice of $\mathrm{I}_{\rm OFF}$ and $\mathrm{V}_{\rm DD}$ . There are many challenges to realizing TFETs in products, such as the requirement of high quality III–V materials and oxides with very thin body dimensions, and the TFET’s layout density and reliability issues due to its source/drain asymmetry. Yet, extremely parallelizable products, such as graphics cores, show the prospect of longer battery life at a cost of some chip area. read more read less
357 Citations
open accessOpen access Journal Article DOI: 10.1109/JEDS.2014.2327626
Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
Dawit Burusie Abdi1, M. Jagadesh Kumar1

Abstract:

In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET). Unlike in the conventional TFET where the gate controls the tunneling barrier width at both source-channel and channel-drain interfaces for... In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET). Unlike in the conventional TFET where the gate controls the tunneling barrier width at both source-channel and channel-drain interfaces for different polarity of gate voltage, overlapping the gate on the drain limits the gate to control only the tunneling barrier width at the source-channel interface irrespective of the polarity of the gate voltage. As a result, the proposed overlapping gate-on-drain TFET exhibits suppressed ambipolar conduction even when the drain doping is as high as \(1 \times 10^{19}\) cm \(^{-3}\) . read more read less

Topics:

Gate oxide (65%)65% related to the paper, Drain-induced barrier lowering (63%)63% related to the paper, Tunnel field-effect transistor (57%)57% related to the paper, Field-effect transistor (54%)54% related to the paper, Ambipolar diffusion (53%)53% related to the paper
251 Citations
open accessOpen access Journal Article DOI: 10.1109/JEDS.2018.2821763
Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Abstract:

Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16- $\mu \text{m}$ and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic tempera... Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16- $\mu \text{m}$ and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device dc characteristics, the accuracy and validity of the compact models are demonstrated by comparing time- and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier, with the measurements at 4 K. read more read less

Topics:

Semiconductor device modeling (60%)60% related to the paper, CMOS (59%)59% related to the paper, Ring oscillator (53%)53% related to the paper, Amplifier (51%)51% related to the paper, Transistor (51%)51% related to the paper
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147 Citations
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Frequently asked questions

1. Can I write IEEE Journal of the Electron Devices Society in LaTeX?

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2. Do you follow the IEEE Journal of the Electron Devices Society guidelines?

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3. Can I cite my article in multiple styles in IEEE Journal of the Electron Devices Society?

Of course! We support all the top citation styles, such as APA style, MLA style, Vancouver style, Harvard style, and Chicago style. For example, when you write your paper and hit autoformat, our system will automatically update your article as per the IEEE Journal of the Electron Devices Society citation style.

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Sign up for our free trial, and you'll be able to use all our features for seven days. You'll see how helpful they are and how inexpensive they are compared to other options, Especially for IEEE Journal of the Electron Devices Society.

5. Can I use a manuscript in IEEE Journal of the Electron Devices Society that I have written in MS Word?

Yes. You can choose the right template, copy-paste the contents from the word document, and click on auto-format. Once you're done, you'll have a publish-ready paper IEEE Journal of the Electron Devices Society that you can download at the end.

6. How long does it usually take you to format my papers in IEEE Journal of the Electron Devices Society?

It only takes a matter of seconds to edit your manuscript. Besides that, our intuitive editor saves you from writing and formatting it in IEEE Journal of the Electron Devices Society.

7. Where can I find the template for the IEEE Journal of the Electron Devices Society?

It is possible to find the Word template for any journal on Google. However, why use a template when you can write your entire manuscript on SciSpace , auto format it as per IEEE Journal of the Electron Devices Society's guidelines and download the same in Word, PDF and LaTeX formats? Give us a try!.

8. Can I reformat my paper to fit the IEEE Journal of the Electron Devices Society's guidelines?

Of course! You can do this using our intuitive editor. It's very easy. If you need help, our support team is always ready to assist you.

9. IEEE Journal of the Electron Devices Society an online tool or is there a desktop version?

SciSpace's IEEE Journal of the Electron Devices Society is currently available as an online tool. We're developing a desktop version, too. You can request (or upvote) any features that you think would be helpful for you and other researchers in the "feature request" section of your account once you've signed up with us.

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After writing your paper autoformatting in IEEE Journal of the Electron Devices Society, you can download it in multiple formats, viz., PDF, Docx, and LaTeX.

12. Is IEEE Journal of the Electron Devices Society's impact factor high enough that I should try publishing my article there?

To be honest, the answer is no. The impact factor is one of the many elements that determine the quality of a journal. Few of these factors include review board, rejection rates, frequency of inclusion in indexes, and Eigenfactor. You need to assess all these factors before you make your final call.

13. What is Sherpa RoMEO Archiving Policy for IEEE Journal of the Electron Devices Society?

SHERPA/RoMEO Database

We extracted this data from Sherpa Romeo to help researchers understand the access level of this journal in accordance with the Sherpa Romeo Archiving Policy for IEEE Journal of the Electron Devices Society. The table below indicates the level of access a journal has as per Sherpa Romeo's archiving policy.

RoMEO Colour Archiving policy
Green Can archive pre-print and post-print or publisher's version/PDF
Blue Can archive post-print (ie final draft post-refereeing) or publisher's version/PDF
Yellow Can archive pre-print (ie pre-refereeing)
White Archiving not formally supported
FYI:
  1. Pre-prints as being the version of the paper before peer review and
  2. Post-prints as being the version of the paper after peer-review, with revisions having been made.

14. What are the most common citation types In IEEE Journal of the Electron Devices Society?

The 5 most common citation types in order of usage for IEEE Journal of the Electron Devices Society are:.

S. No. Citation Style Type
1. Author Year
2. Numbered
3. Numbered (Superscripted)
4. Author Year (Cited Pages)
5. Footnote

15. How do I submit my article to the IEEE Journal of the Electron Devices Society?

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16. Can I download IEEE Journal of the Electron Devices Society in Endnote format?

Yes, SciSpace provides this functionality. After signing up, you would need to import your existing references from Word or Bib file to SciSpace. Then SciSpace would allow you to download your references in IEEE Journal of the Electron Devices Society Endnote style according to Elsevier guidelines.

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