Example of International Journal of Electronics format
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Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format
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Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format Example of International Journal of Electronics format
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open access Open Access

International Journal of Electronics — Template for authors

Publisher: Taylor and Francis
Categories Rank Trend in last 3 yrs
Electrical and Electronic Engineering #346 of 693 down down by 7 ranks
journal-quality-icon Journal quality:
Good
calendar-icon Last 4 years overview: 542 Published Papers | 1339 Citations
indexed-in-icon Indexed in: Scopus
last-updated-icon Last updated: 28/06/2020
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Top papers
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FAQ

Related Journals

open access Open Access

IEEE

Quality:  
High
CiteRatio: 6.4
SJR: 0.786
SNIP: 2.027
open access Open Access

IEEE

Quality:  
High
CiteRatio: 3.7
SJR: 0.396
SNIP: 1.133
open access Open Access
recommended Recommended

IEEE

Quality:  
High
CiteRatio: 9.7
SJR: 1.652
SNIP: 1.947

Journal Performance & Insights

Impact Factor

CiteRatio

Determines the importance of a journal by taking a measure of frequency with which the average article in a journal has been cited in a particular year.

A measure of average citations received per peer-reviewed paper published in the journal.

1.004

6% from 2018

Impact factor for International Journal of Electronics from 2016 - 2019
Year Value
2019 1.004
2018 1.07
2017 0.939
2016 0.729
graph view Graph view
table view Table view

2.5

19% from 2019

CiteRatio for International Journal of Electronics from 2016 - 2020
Year Value
2020 2.5
2019 2.1
2018 2.0
2017 1.6
2016 1.3
graph view Graph view
table view Table view

insights Insights

  • Impact factor of this journal has decreased by 6% in last year.
  • This journal’s impact factor is in the top 10 percentile category.

insights Insights

  • CiteRatio of this journal has increased by 19% in last years.
  • This journal’s CiteRatio is in the top 10 percentile category.

SCImago Journal Rank (SJR)

Source Normalized Impact per Paper (SNIP)

Measures weighted citations received by the journal. Citation weighting depends on the categories and prestige of the citing journal.

Measures actual citations received relative to citations expected for the journal's category.

0.251

3% from 2019

SJR for International Journal of Electronics from 2016 - 2020
Year Value
2020 0.251
2019 0.259
2018 0.277
2017 0.264
2016 0.262
graph view Graph view
table view Table view

0.737

1% from 2019

SNIP for International Journal of Electronics from 2016 - 2020
Year Value
2020 0.737
2019 0.743
2018 0.903
2017 0.809
2016 0.743
graph view Graph view
table view Table view

insights Insights

  • SJR of this journal has decreased by 3% in last years.
  • This journal’s SJR is in the top 10 percentile category.

insights Insights

  • SNIP of this journal has decreased by 1% in last years.
  • This journal’s SNIP is in the top 10 percentile category.

International Journal of Electronics

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Taylor and Francis

International Journal of Electronics

The International Journal of Electronics (IJE) supports technical applications and developing research at the cutting edge of electronics. Encompassing a broad range of electronic topics, we are a leading electronics journal dedicated to quickly sharing new concepts and develo...... Read More

Engineering

i
Last updated on
28 Jun 2020
i
ISSN
0020-7217
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Impact Factor
Medium - 0.729
i
Acceptance Rate
Not provided
i
Open Access
Yes
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Sherpa RoMEO Archiving Policy
Green faq
i
Plagiarism Check
Available via Turnitin
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Endnote Style
Download Available
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Bibliography Name
Taylor and Francis Custom Citation
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Citation Type
Author Year
(Blonder et al., 1982)
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Bibliography Example
Blonder, G. E., Tinkham, M., & Klapwijk, T. M. (1982). Transition from metallic to tunnel-ing regimes in superconducting microconstrictions: Excess current, charge imbalance, and supercurrent conversion. Phys. Rev. B, 25 (7), 4515–4532.

Top papers written in this journal

open accessOpen access Journal Article DOI: 10.1080/00207217708900678
A general unified approach to modelling switching-converter power stages
R.D. Middlebrook1, Slobodan Cuk1

Abstract:

A method for modelling switching-converter power stages is developed, whose starting-point is the unified state-space representation of the switched notworks and whose end result is either a complete state-space description or its equivalent small-signal low-frequency linear circuit model. A new canonical circuit model is pro... A method for modelling switching-converter power stages is developed, whose starting-point is the unified state-space representation of the switched notworks and whose end result is either a complete state-space description or its equivalent small-signal low-frequency linear circuit model. A new canonical circuit model is proposed, whose fixed topology contains all the essential input-output and control properties of any d.c.-to-d.c. switching converter, regardless of its detailed configuration, and by which different converters can be characterized in the form of a table conveniently stored in a computer data bank to provide a useful tool for computer-aided design and optimization. The new canonical circuit model predicts that, in general, switching action introduces both zeros and poles into the duty ratio to output transfer function in addition to those from the effective filter network. read more read less

Topics:

Linear circuit (57%)57% related to the paper, Duty cycle (53%)53% related to the paper, Filter (video) (52%)52% related to the paper, Transfer function (51%)51% related to the paper
View PDF
1,809 Citations
Journal Article DOI: 10.1080/00207218108901356
Relativistic gyrotrons and cyclotron autoresonance masers
V. L. Bratman, Naum S. Ginzburg, Gregory S. Nusinovich, M.I. Petelin, P. S. Strklkov1

Abstract:

As follows from theory, supported by experiment, if the electron energy grows to ∼ 1 McV the gyroton preserves its capability to produce single-mode radiation in the millimetere wave range with rather high efficiency. If the electron energy is ultra-relativistic (≳ 1 McV), preference must be given to the eyelotron auto-resona... As follows from theory, supported by experiment, if the electron energy grows to ∼ 1 McV the gyroton preserves its capability to produce single-mode radiation in the millimetere wave range with rather high efficiency. If the electron energy is ultra-relativistic (≳ 1 McV), preference must be given to the eyelotron auto-resonance maser, which is, in principle, the most effective type of free electron laser (‘ doppertron’) at milimetere and submillimetre wavelengths. read more read less

Topics:

Free-electron laser (51%)51% related to the paper
287 Citations
Journal Article DOI: 10.1080/00207215908937186
The Thermoelectric Figure of Merit and its Relation to Thermoelectric Generators

Abstract:

The expression for the figure of merit of a semi-conductor of given carrier mobility and lattice thermal conductivity expressed in terms of generalized Fermi-Dirae functions has been numerically evaluated for various scattering indices. The results are presented graphically enabling the maximum figure of merit to be found. Hi... The expression for the figure of merit of a semi-conductor of given carrier mobility and lattice thermal conductivity expressed in terms of generalized Fermi-Dirae functions has been numerically evaluated for various scattering indices. The results are presented graphically enabling the maximum figure of merit to be found. High-temperature limitations due to minority carrier production are considered in relation to the energy gap of the semi-conductor. The results are discussed in connection with bismuth telluride and other sulphides, selenides and telluridos of the heavy metals. read more read less

Topics:

Figure of merit (64%)64% related to the paper, Johnson's figure of merit (64%)64% related to the paper, Thermoelectric generator (58%)58% related to the paper, Bismuth telluride (53%)53% related to the paper
270 Citations
Journal Article DOI: 10.1080/00207216608937891
Electrical Transport in nGe-pGaAs Heterojunctions†
A. R. Riben1, D. L. Feucht1

Abstract:

A multi-step recombination-tunnelling model, similar to that used to describe the excess current in tunnel diodes, is developed to explain the observed electrical characteristics of nGe-pGaAs heterodiodes. Two different, but quite similar models are used to qualitatively describe the observed forward and reverse characteristi... A multi-step recombination-tunnelling model, similar to that used to describe the excess current in tunnel diodes, is developed to explain the observed electrical characteristics of nGe-pGaAs heterodiodes. Two different, but quite similar models are used to qualitatively describe the observed forward and reverse characteristics. Quantitative agreement with the experimental characteristics of the many devices presented is obtained by an empirical modification of the resulting equations. The lack of minority carrier injection in these devices is in agreement with the proposed model. read more read less
230 Citations
Journal Article DOI: 10.1080/002072199133337
Inverting second generation current conveyors: the missing building blocks, CMOS realizations and applications

Abstract:

The concept of voltage mirror is introduced and used, together with the current mirror, to ideally represent the current and voltage inverting properties of some analogue building blocks. The properties of the nullor and mirror elements are used to relate the different devices in the ideal case as well as to define the adjoin... The concept of voltage mirror is introduced and used, together with the current mirror, to ideally represent the current and voltage inverting properties of some analogue building blocks. The properties of the nullor and mirror elements are used to relate the different devices in the ideal case as well as to define the adjoint network for each building block. Two new types of second generation current conveyor (CCII) are introduced. One is the adjoint of the CCII+ and is named the inverting second generation current conveyor ‘negative’ (ICCII–); the other is the ICCII+. CMOS realizations of the ICCII– are presented and new ICCII– based current mode circuits are obtained by applying a voltage-to-current-mode transformation to the CCII+ based circuits. read more read less

Topics:

Current mirror (62%)62% related to the paper, Current conveyor (60%)60% related to the paper, Nullor (56%)56% related to the paper, Nullator (54%)54% related to the paper, Norator (53%)53% related to the paper
214 Citations
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International Journal of Electronics format uses Taylor and Francis Custom Citation citation style.

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Frequently asked questions

1. Can I write International Journal of Electronics in LaTeX?

Absolutely not! Our tool has been designed to help you focus on writing. You can write your entire paper as per the International Journal of Electronics guidelines and auto format it.

2. Do you follow the International Journal of Electronics guidelines?

Yes, the template is compliant with the International Journal of Electronics guidelines. Our experts at SciSpace ensure that. If there are any changes to the journal's guidelines, we'll change our algorithm accordingly.

3. Can I cite my article in multiple styles in International Journal of Electronics?

Of course! We support all the top citation styles, such as APA style, MLA style, Vancouver style, Harvard style, and Chicago style. For example, when you write your paper and hit autoformat, our system will automatically update your article as per the International Journal of Electronics citation style.

4. Can I use the International Journal of Electronics templates for free?

Sign up for our free trial, and you'll be able to use all our features for seven days. You'll see how helpful they are and how inexpensive they are compared to other options, Especially for International Journal of Electronics.

5. Can I use a manuscript in International Journal of Electronics that I have written in MS Word?

Yes. You can choose the right template, copy-paste the contents from the word document, and click on auto-format. Once you're done, you'll have a publish-ready paper International Journal of Electronics that you can download at the end.

6. How long does it usually take you to format my papers in International Journal of Electronics?

It only takes a matter of seconds to edit your manuscript. Besides that, our intuitive editor saves you from writing and formatting it in International Journal of Electronics.

7. Where can I find the template for the International Journal of Electronics?

It is possible to find the Word template for any journal on Google. However, why use a template when you can write your entire manuscript on SciSpace , auto format it as per International Journal of Electronics's guidelines and download the same in Word, PDF and LaTeX formats? Give us a try!.

8. Can I reformat my paper to fit the International Journal of Electronics's guidelines?

Of course! You can do this using our intuitive editor. It's very easy. If you need help, our support team is always ready to assist you.

9. International Journal of Electronics an online tool or is there a desktop version?

SciSpace's International Journal of Electronics is currently available as an online tool. We're developing a desktop version, too. You can request (or upvote) any features that you think would be helpful for you and other researchers in the "feature request" section of your account once you've signed up with us.

10. I cannot find my template in your gallery. Can you create it for me like International Journal of Electronics?

Sure. You can request any template and we'll have it setup within a few days. You can find the request box in Journal Gallery on the right side bar under the heading, "Couldn't find the format you were looking for like International Journal of Electronics?”

11. What is the output that I would get after using International Journal of Electronics?

After writing your paper autoformatting in International Journal of Electronics, you can download it in multiple formats, viz., PDF, Docx, and LaTeX.

12. Is International Journal of Electronics's impact factor high enough that I should try publishing my article there?

To be honest, the answer is no. The impact factor is one of the many elements that determine the quality of a journal. Few of these factors include review board, rejection rates, frequency of inclusion in indexes, and Eigenfactor. You need to assess all these factors before you make your final call.

13. What is Sherpa RoMEO Archiving Policy for International Journal of Electronics?

SHERPA/RoMEO Database

We extracted this data from Sherpa Romeo to help researchers understand the access level of this journal in accordance with the Sherpa Romeo Archiving Policy for International Journal of Electronics. The table below indicates the level of access a journal has as per Sherpa Romeo's archiving policy.

RoMEO Colour Archiving policy
Green Can archive pre-print and post-print or publisher's version/PDF
Blue Can archive post-print (ie final draft post-refereeing) or publisher's version/PDF
Yellow Can archive pre-print (ie pre-refereeing)
White Archiving not formally supported
FYI:
  1. Pre-prints as being the version of the paper before peer review and
  2. Post-prints as being the version of the paper after peer-review, with revisions having been made.

14. What are the most common citation types In International Journal of Electronics?

The 5 most common citation types in order of usage for International Journal of Electronics are:.

S. No. Citation Style Type
1. Author Year
2. Numbered
3. Numbered (Superscripted)
4. Author Year (Cited Pages)
5. Footnote

15. How do I submit my article to the International Journal of Electronics?

It is possible to find the Word template for any journal on Google. However, why use a template when you can write your entire manuscript on SciSpace , auto format it as per International Journal of Electronics's guidelines and download the same in Word, PDF and LaTeX formats? Give us a try!.

16. Can I download International Journal of Electronics in Endnote format?

Yes, SciSpace provides this functionality. After signing up, you would need to import your existing references from Word or Bib file to SciSpace. Then SciSpace would allow you to download your references in International Journal of Electronics Endnote style according to Elsevier guidelines.

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