Agilent Technologies

About: Agilent Technologies is a company organization based out in Santa Clara, California, United States. It is known for research contribution in the topics: Signal & Mass spectrometry. The organization has 7398 authors who have published 11518 publications receiving 262410 citations. The organization is also known as: Agilent Technologies, Inc..

Unique identifiers for indicating properties associated with entities to which they are attached, and methods for using

Abstract: Methods, systems and computer readable media for sequencing a biopolymer specimen and tracking a source from which the specimen was derived. Methods, systems and computer readable media for multiplex sequencing biopolymer samples. Methods, systems and computer readable media for efficiently sequencing biopolymeric specimens through a high-throughput sequencer. Methods, systems and computer readable media for performing ratio-based analysis with a high throughput sequencer.

Future Device Modeling Trends

Abstract: Good transistor models are essential for efficient computer-aided-design (CAD) of nonlinear microwave and RF circuits, monolithic microwave integrated circuits (MMICs), power amplifiers (PAs), and nonlinear RF systems. Increasingly complicated demands of the various semiconductor technologies (e.g., GaAs pHEMTs, InP double heterojunction bipolar transistors (DHBTs), silicon on insulator (SOI), LDMOS, GaN HFETs, etc.), and their applications in terms of power and frequency of operation and complexity of applied signals (e.g., modern communication signals with high peak-toaverage ratios) have placed commensurate requirements on the accuracy and generality of the device models used for design. New semiconductor material systems (e.g., GaN) have been developing at such a fast rate that conventional compact modeling approaches may not be able to keep up. These and other challenges have spawned much research into the advanced nonlinear device modeling techniques that are the focus of this article.

Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator

Abstract: Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and an electrically-isolating acoustic coupler connected between the modulator and the demodulator. The acoustic coupler comprises no more than one decoupled stacked bulk acoustic resonator (IDSBAR). An electrically-isolating acoustic coupler based on a single IDSBAR is physically small and is inexpensive to fabricate yet is capable of passing information signals having data rates in excess of 100 Mbit/s and has a substantial breakdown voltage between its inputs and its outputs.

New Trends for the Nonlinear Measurement and Modeling of High-Power RF Transistors and Amplifiers With Memory Effects

Abstract: Power amplifier (PA) behavior is inextricably linked to the characteristics of the transistors underlying the PA design. All transistors exhibit some degree of memory effects, which must therefore be taken into account in the modeling and design of these PAs. In this paper, we will present new trends for the characterization, device modeling, and behavioral modeling of power transistors and amplifiers with strong memory effects. First the impact of thermal and electrical memory effects upon the performance of a transistor will be revealed by comparing continuous wave and pulsed RF large-signal measurements. Pulsed-RF load-pull from the proper hot bias condition yields a more realistic representation of the peak power response of transistors excited with modulated signals with high peak-to-average power ratio. Next, an advanced device modeling method based on large-signal data from a modern nonlinear vector network analyzer instrument, coupled with modeling approaches based on advanced artificial neural network technology, will be presented. This approach enables the generation of accurate and robust time-domain nonlinear simulation models of modern transistors that exhibit significant memory effects. Finally an extension of the X-parameter (X-parameter is a trademark of Agilent Technologies Inc.) behavioral model to account for model memory effects of RF and microwave components will be presented. The approach can be used to model hard nonlinear behavior and long-term memory effects and is valid for all possible modulation formats for all possible peak-to-average ratios and for a wide range of modulation bandwidths. Both the device and behavioral models have been validated by measurements and are implemented in a commercial nonlinear circuit simulator.