Agilent Technologies

About: Agilent Technologies is a company organization based out in Santa Clara, California, United States. It is known for research contribution in the topics: Signal & Mass spectrometry. The organization has 7398 authors who have published 11518 publications receiving 262410 citations. The organization is also known as: Agilent Technologies, Inc..

Coupling to microstructures for a laboratory microchip

Abstract: A laboratory microchip providing a microspray has a substrate having a channel structure on one side thereof. A microspray tip is on the other side of the substrate close to an edge of the substrate. The substrate is deformable in a particular region. Deformation results from thinning the substrate locally in the region or by providing a linear perforation that extends approximately perpendicular to the plane of the substrate. Alternatively, deformation can be obtained by selecting a suitable material for the entire substrate. Substrate deformation can be permanent or reversible.

Mounting arrangement for plug-in modules

Abstract: A plug-in module such as a transceiver for an optical communications system is adapted to be inserted into the front opening of a cage-like reception member and to slide into the reception member towards an end mounting position. The module comprises a latch mechanism for latching the plug-in module in the end mounting position in the reception member. The module includes a front face having opposite sides and the latch mechanism includes a pair of levers tiltably associated with the plug-in module at the opposite sides of the front face. The levers have homologous end portions with a transverse bar extending therebetween in a general bail-like fashion.

Controlling the surface chemistry and chromatographic properties of methacrylate‐ester‐based monolithic capillary columns via photografting

Abstract: Preparation of monolithic capillary columns for separations in the CEC mode using UV-initiated polymerization of the plain monolith followed by functionalization of its pore surface by photografting has been studied. The first step enabled the preparation of generic poly(butyl methacrylate-co-ethylene dimethacrylate) monoliths with optimized porous properties, controlled by the percentages of porogens 1-decanol and cyclohexanol in the polymerization mixture, irradiation time, and UV light intensity. Ionizable monomers [2-(methacryloyloxy)ethyl]trimethylammonium chloride or 2-acryloamido-2-methyl-1-propanesulfonic acid were then photografted onto the monolithic matrix, allowing us to control the direction of the EOF in CEC. Different strategies were applied to control the grafting density and, thereby, the magnitude of the EOF. To control the hydrophobic properties, two approaches were tested: (i) cografting of a mixture of the ionizable and hydrophobic monomers and (ii) sequential grafting of the ionizable and hydrophobic monomers. Cografting resulted in similar retention but higher EOF. With sequential grafting, more than 50% increase in retention factors was obtained and a slight decrease in EOF was observed due to shielding of the ionizable moieties.

Density-gradient analysis of MOS tunneling

Abstract: The density-gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (<25 /spl Aring/) oxide MOS capacitors. Both electron and hole tunneling are included in the one-dimensional (1-D) analysis and two new refinements to density-gradient theory are introduced, one relating to the treatment of Shockley-Read-Hall recombination and the other a modification of the tunneling boundary conditions to account for the semiconductor bandgap. Detailed comparisons are made with experimental current-voltage (I-V) data for samples with both n/sup +/ and p/sup +/ polysilicon gates and all of the features of the data are found to be understandable within the density-gradient framework. Besides providing new understanding of these experiments, these results show that the density-gradient approach can be of great value for engineering-oriented device analysis in quantum regimes.