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Institution

Agilent Technologies

CompanySanta Clara, California, United States
About: Agilent Technologies is a company organization based out in Santa Clara, California, United States. It is known for research contribution in the topics: Signal & Mass spectrometry. The organization has 7398 authors who have published 11518 publications receiving 262410 citations. The organization is also known as: Agilent Technologies, Inc..


Papers
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Journal ArticleDOI
TL;DR: A cutaneous pathway displaying capabilities for serotonin biosynthesis and/or its metabolism to N-acetylserotonin in rodent skin is uncovered, as serotonin has powerful vasodilator, immunomodulator, and growth factor actions, and this pathway could be involved in skin physiology and/ or pathology.

69 citations

Patent
31 Oct 2003
TL;DR: In this article, a system for identifying calls traversing a packet network is presented, which includes an analysis device that correlates the first signaling information with the second signaling information to generate correlated records about calls that traverse both the packet switched network and the circuit network.
Abstract: A system for identifying calls traversing a packet network. The system includes an analysis device that receives first signaling information from a packet network and second signaling information from a circuit network. The analysis device correlates the first signaling information with the second signaling information to generate correlated records about calls that traverse both the packet switched network and the circuit network. A database system receives the correlated records and calculates statistics describing traffic that traversed both the packet network and the circuit network.

69 citations

Journal ArticleDOI
TL;DR: In this article, the authors examined the effect of protein kinase CK2α-phosphorylation of maize SSRP1 protein on the C-terminal region next to the HMG box domain.

69 citations

Proceedings ArticleDOI
01 Jun 2014
TL;DR: In this article, an active-source injection based waveform measurement HW/SW system built around an artificial neural network (ANN) training infrastructure for coupled electrothermal and trap-dependent model constitutive relations is presented.
Abstract: A complete nonlinear characterization and modeling flow for modern GaN transistors is presented. Features include a new active-source injection based waveform measurement HW/SW system built around an NVNA, an extended artificial neural network (ANN) training infrastructure for coupled electro-thermal and trap-dependent model constitutive relations, and the native implementation in a commercial simulator. The model is validated by detailed comparisons to measured data for an advanced mm-wave 150 nm 6×60μm GaN HFET manufactured by Raytheon Integrated Defense Systems. Excellent results are achieved for DC, S-parameters, harmonic and intermodulation distortion, and load-pull figures of merit, over a very wide range of bias conditions, complex loads, powers, and frequencies.

69 citations


Authors

Showing all 7402 results

NameH-indexPapersCitations
Hongjie Dai197570182579
Zhuang Liu14953587662
Jie Liu131153168891
Thomas Quertermous10340552437
John E. Bowers102176749290
Roy G. Gordon8944931058
Masaru Tomita7667740415
Stuart Lindsay7434722224
Ron Shamir7431923670
W. Richard McCombie7114464155
Tomoyoshi Soga7139221209
Michael R. Krames6532118448
Shabaz Mohammed6418817254
Geert Leus6260919492
Giuseppe Gigli6154115159
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
20228
2021142
2020157
2019168
2018164