Showing papers by "Alcatel-Lucent published in 1980"
TL;DR: This paper presents and analyzes the assumed mechanical model, and briefly discusses a possible specific physical realization for the nonlinearity of cochlea mechanics, based on dynamical variations in outer hair cell stereocilia stiffness.
Abstract: One of the basic questions which has persisted in the field of hearing theory is the still unresolved mechanical action of hair‐cell transduction The fundamental problem that has historically plagued researches is the discrepancy between mechanically measured tuning of basilar membrane motion and neurally measured tuning In this paper we show that the difference between these two measures appears to be accounted for by a specific, physically motivated, micromechanical model This model gives rise to a spectral zero which we identify as the ’’second‐filter’’ of cochlear transduction For high‐frequency fibers this zero resides at a fixed frequency ratio below CF (characteristic frequency) while for fibers having low‐frequency CF’s the zero appears to go to zero frequency faster than CF In this paper we first present and analyze the assumed mechanical model We then briefly discuss a possible specific physical realization for the nonlinearity of cochlea mechanics The nonlinear model is based on dynamica
291 citations
TL;DR: In this paper, low-dark-current IN0.53GA0.47 photodiodes have been shown to have a soft breakdown property at higher voltages, resulting in the soft breakdown characteristic widely observed in these materials.
Abstract: We report on low‐dark‐current IN0.53GA0.47As photodiodes in which generation‐recombination current dominates diode leakage up to as high as 100 V. At higher voltages, tunneling currents become dominant, resulting in the soft breakdown characteristic widely observed in these materials. The dark current versus voltage characteristics have been fit to variations in current of over six orders of magnitude and a temperature range greater than 150 K using a theory which includes generation‐recombination, tunneling, and shunt components.
168 citations
166 citations
TL;DR: In this article, the performance of a series of n-WSe/sub 2/ photoanodes differing in surface morphology has been investigated, and an electric field component, which parallels the layers, is introduced by the steps.
Abstract: The performance of a series of n-WSe/sub 2/ photoanodes differing in surface morphology has been investigated. A solar to electrical conversion efficiency of 3.7% is reached on a smooth photoanode in the n-WSe/sub 2//2 M KI-0.05 M I/sub 2//C cell. A correlation exists between the short circuit current, the open circuit voltage, and the fill factor on the one side and surface perfection, determined by scanning electron microscopy, on the other. We propose that an electric field component, which parallels the layers, is introduced by the steps. Because of the highly anisotropic conductivity of layered compounds the holes, on their way to the interface, are deflected and move to recombination sites at the edges of steps. 8 figures.
146 citations
TL;DR: The PQCC experience reveals that—contrary to common practice and belief—retargetability and a high level of optimization are not incompatible.
Abstract: The PQCC experience reveals that—contrary to common practice and belief—retargetability and a high level of optimization are not incompatible.
135 citations
TL;DR: In this paper, it was shown that ruthenium ions on the surface of n-GaAs decrease the surface recombination velocity of electrons and holes from 5×105 to 3.5×104 cm/sec.
Abstract: Chemisorbed ruthenium ions on the surface of n‐GaAs decrease the surface recombination velocity of electrons and holes from 5×105 to 3.5×104 cm/sec. It is shown that the ions, in a one‐third monolayer thickness, are confined to the surface and do not form a new junction by diffusing into the GaAs. This use of Ru appears to be the first observation of the reduction of the surface recombination velocity for GaAs by the simple chemisorption of ions.
114 citations
TL;DR: In this paper, a new class of nematic liquid-crystal storage effects with potential display applications is described, and the properties of the bistable states and a proposed switching mechanism are described.
Abstract: A new class of nematic liquid‐crystal storage effects with potential display applications is described. We have developed structures, produced by special surface alignment patterns, exhibiting bistable configurations. Switching between states has been demonstrated with both electric and magnetic fields. The movement of disclinations and the topological distinction between states play essential roles in bistable switching. The properties of the bistable states and a proposed switching mechanism are described.
110 citations
TL;DR: The first efficient semiconductor liquid junction solar cell based on a p-type semiconductor was reported in this paper, achieving a solar-to-electrical conversion efficiency of 9.4%.
Abstract: The first efficient semiconductor liquid junction solar cell based on a p-type semiconductor was reported. At an insolation of 110 mW/cm/sup 2/, the output of the photoelectrochemical p-InP/VCl/sub 3/-VCl/sub 2/-HCl/C cell was 10.4 mW/cm/sup 2/ for a solar-to-electrical conversion efficiency of 9.4%. The output power remained stable upon passage of 13,000 C/cm/sup 2/ near the maximum power point (0.52V, 20mA/cm/sup 2/), and there was no measurable weight loss. The results contradicted suggestions of a fundamental limitations to the efficiencies of p-type cells from surface states and fermi-level pinning. 1 figure. (DP)
92 citations
TL;DR: In this article, Raman experiments on polar phonons in GaAs•Ga1−xAlxAs superlattices are reported. And the interpretation in terms of folding of the phonon Brillouin zone and scattering from q≠0 phonons induced by electronic zone folding is discussed.
Abstract: Raman experiments on polar phonons in GaAs‐Ga1−xAlxAs superlattices are reported. Other data from the literature, and its interpretation in terms of folding of the phonon Brillouin zone and scattering from q≠0 phonons induced by electronic zone folding, are discussed. An alternative explanation is presented based on optical anisotropy induced by layering. Numerical results show good agreement with experiment.
79 citations
TL;DR: In this article, three narrow resonances have been observed in e/sup +/e/sup -/ annihilation into hadrons at total energies between 9.4 and 10.4 GeV.
Abstract: Three narrow resonances have been observed in e/sup +/e/sup -/ annihilation into hadrons at total energies between 9.4 and 10.4 GeV. Measurements of mass spacings and ratios of lepton pair widths support the interpretation of these ''UPSILON'' states as the lowest triplet-S levels of the bb-bar quark-antiquark system.
76 citations
TL;DR: The hyperfine dynamic field acting on fast ions traversing polarized iron foils has been measured as a function of the ion velocity in the region 0.03 as mentioned in this paper, where 0.
Abstract: The hyperfine dynamic field acting on fast ions traversing polarized iron foils has been measured as a function of the ion velocity in the region 0.03
TL;DR: A new algorithm for answering the problem of characterizing those D for which the Diophantine equation X2 — DY2 = 1 is solvable is presented and it is proved that this algorithm always runs to completion in 0(Z>1/4+') bit operations.
Abstract: The problem of characterizing those D for which the Diophantine equation X2 — DY2 = 1 is solvable has been studied for two hundred years. This paper considers this problem from the viewpoint of determining the computational complexity of recognizing such D. For a given D, one can decide the solvability or unsolvability of X2 — DY2 = 1 using the ordinary continued fraction expansion of VÖ, but for certain D this requires more than \\ vD (log D)~ ' computational operations. This paper presents a new algorithm for answering this question and proves that this algorithm always runs to completion in 0(Z>1/4+') bit operations. If the input to this algorithm includes a complete prime factorization of D and a quadratic nonresidue n¡ for each prime p¡ dividing D, then this algorithm is guaranteed to run to completion in 0((log 0)5(log log £>)(log log log D)) bit operations. This algorithm is based on an algorithm that finds a basis of forms for the 2-Sylow subgroup of the class group of binary quadratic forms of determinant D.
TL;DR: In this article, two types of mechanically bistable liquid-crystal display structures, a previously reported type [2], [3] called vertical-horizontal, and a second type, called horizontal-hierarchical, were discussed.
Abstract: This paper discusses two types of mechanically bistable liquid-crystal display structures, a previously reported type [2], [3] called vertical-horizontal, and a second type, called horizontal-horizontal. In both of them, the director configuration is planar. They are distinguished by the orientation of the director plane, which is perpendicular to the major surfaces of the device in the type called vertical-horizontal, and parallel in the type called horizontal-horizontal. In both types, the bistable states may be differentiated optically by use of a polarizer and dichroic dye, and switching is accomplished electrically by exploiting the dielectric anisotropy of the ordered liquid crystal states. We show calculations of the director configurations, their energy, and optical contrast of the bistable states. The bistable states are topologically distinct, so that the switching transitions are necessarily discontinuous in character. The movement of disclinations governs the switching process, and their detachment forms the basis of stability.
TL;DR: In this paper, high-quality epitaxial NiSi2 films have been fabricated on Si substrates and examined by grazingangle Rutherford backscattering and channeling techniques, showing that the number of disordered Ni atoms at the interface must be less than 1.5×1015 Ni/cm2.
Abstract: High‐quality epitaxial NiSi2 films have been fabricated on 〈111〉 Si substrates and examined by grazing‐angle Rutherford backscattering and channeling techniques. The channeled backscattering yields are close to single‐crystal values and permit examination of the silicide‐silicon interface. The yields indicate that the number of disordered Ni atoms at the interface must be less than 1.5×1015 Ni/cm2.
TL;DR: In this article, a two-layer electron-sensitive resist structure is employed consisting of an upper layer of polymethyl methacrylate and a lower layer of a copolymer of methacrylic acid and methyl methacylate.
Abstract: Resist features as small as 200 A and gold lines as narrow as 400 A separated by 800‐A center to center have been fabricated on thick silicon. substrates. A two‐layer electron‐sensitive resist structure is employed consisting of an upper layer of polymethyl‐methacrylate and a lower layer of a copolymer of methacrylic acid and methyl methacrylate. Use of the more electron‐sensitive lower layer results in an undercut which provides clean lift‐off of the evaporated gold. Degradation in the pattern resolution by electrons backscattered from the substrate is minimized by the presence of the lower resist layer. This method provides the finest resolution lift‐off patterns reported.
TL;DR: In this article, the authors reported the voltage and light to electrical energy conversion characteristics of metallized semiconductor Schottky junctions with redox solution contacts, where gold, platinum, and rhodium plated with carbon counter-electrodes and ferro-ferricyanide solutions give 2.6% conversion efficiency under solar irradiance.
Abstract: Voltammetric and light to electrical energy conversion characteristics of metallized semiconductor Schottky junctions with redox solution contacts are reported. Electrodeposited noble metal films on establish contacts to reversible aqueous redox couple solutions that can sustain solar photocurrent levels with low loss, requiring only a thin metal layer adequate to photovoltaic barrier formation. Possible advantages in lateral conductivity, relative to solid‐state Schottky devices, and in surface stability and redox electrolyte independence, relative to semiconductor‐liquid junction solar cells, are weighed against both the absorptive losses in the metal layer and the practicalities of obtaining sufficient integrity in the film to serve the semiconductor corrosion protection function. Gold, platinum, and rhodium plated with carbon counter‐electrodes and ferro‐ferricyanide solutions give 2–6% conversion efficiency under solar irradiance.
TL;DR: A focussing monochromator array for detection of fluorescence EXAFS (Extended X−ray Absorption Edge Fine Structure) is described, made of LiF crystals, specially prepared for large mosaic spread.
Abstract: A focussing monochromator array for detection of fluorescence EXAFS (Extended X−ray Absorption Edge Fine Structure) is described. The array is made of LiF crystals, specially prepared for large mosaic spread. Design criteria, performance specifications, and details of fabrication and crystal preparation are given.
TL;DR: This paper discusses several important aspects of the implementation of a short-time spectral analysis approach to the problems of spectral estimation and system identification.
Abstract: Recent work has demonstrated the utility of a short-time spectral analysis approach to the problems of spectral estimation and system identification. In this paper several important aspects of the implementation are discussed. Included is a discussion of the computational effects (e.g., storage, running time) of the various analysis parameters. A computer program is included which illustrates one implementation of the method.
TL;DR: In this article, a columnar topography in obliquely deposited oxide films prepared by thermal and electron beam deposition at low rates is presented, where column size, chaining, and inclination are described and correlations with liquid crystal surface tilt alignment discussed.
Abstract: We present direct evidence of a columnar topography in obliquely deposited oxide films prepared by thermal and electron beam deposition at low rates. Column size, chaining, and inclination will be described and the correlations with liquid‐crystal surface tilt alignment discussed.
TL;DR: In this paper, the effect of diffractive charm muoproduction on photon-nucleon total cross-sections was investigated and it was shown that the effective cross-section for 178(100)-GeV photons is 750{sup +180}{sub-130} (560{sup+200}{sub -130}) nb.
Abstract: Interactions of 209-GeV muons in the Multimuon Spectrometer at Fermilab have yielded 20072 dimuon final states, with (81±10)% attributed to production of charmed states decaying to muons. The cross section for diffractive charm muoproduction is 6.9{sub -1.4}{sup +1.9} nb. Extrapolated to Q{sup 2} =0, the effective cross section for 178(100)-GeV photons is 750{sup +180}{sub -130} (560{sup +200}{sub -130}) nb, too small to explain the high-energy rise in the photon-nucleon total cross section.
Patent•
28 Apr 1980TL;DR: In this paper, the authors proposed a method for compensating phase noise after equalization, if any, of the received symbols and before application of received symbols to the decision circuit.
Abstract: Data in the form of multi-value symbols is transmitted at a symbol rate 1/ΔT At the receiver a decision circuit supplies estimates of the transmitted symbols on the basis of the received symbols The present invention concerns compensating phase noise after equalization, if any, of the received symbols and before application of the received symbols to the decision circuit (38, 39) The received symbols are in complex form with in-phase and quadrature components yk ' and yk " respectively Phase noise is compensated by complex multiplication in a multiplier (36) of the received symbols by a complex coefficient mk mk+1 =[mk -λ(vk -ak)yk *]exp[-iFk (ej)] where: λ is a real coefficient; yk * is the complex conjugate of the symbol received at instant kΔT+to (where to is the instant taken as the origin of time measurements); vk is the symbol applied to the decision circuit at said instant; ak is the estimated value of the received symbol; ej is an error signal derived from the phase difference between the symbol applied to the decision circuit and the symbol estimated by the decision circuit at instant jΔT+to ; and Fk (ej) is a linear function of at least the error signals ej The invention is particularly applicable to quadrature modulation systems, but if only one channel is transmitted the quadrature channel can be simulated using the Hilbert transform of the one channel
Patent•
23 Jun 1980TL;DR: In this paper, the authors proposed an echo canceller for a full-duplex carrier modulation transmission system terminal, which includes a digital time-domain complex transversal filter with controlled weighting coefficients and an offset equal to a submultiple l of a Baud period Δ related to a rate at which a stream of complex symbols is received at the input of the filter.
Abstract: An echo canceller for a full-duplex carrier modulation transmission system terminal. The echo canceller includes a digital time-domain complex transversal filter with controlled weighting coefficients and an offset equal to a submultiple l of a Baud period Δ related to a rate at which a stream of complex symbols is received at the input of the filter. These complex symbols include complex symbols outputted by a coder of a transmitter of the terminal at the rate l/Δ interleaved with l-1 null symbols. The transversal filter output is connected to a digital modulator operated at the transmitter carrier frequency with instantaneous values updated at intervals equal to the Baud period to generate a passband echo copy signal. The invention is of particular benefit in transmission systems in which the product of the transmission carrier frequency and the Baud period is an integral multiple of l/4, as digital implementation of the modulator is then extremely simple.
TL;DR: In this article, the total Zn concentration was (1.3)×1019/cm3 with 505% of the dopant residing on lattice sites for samples prepared by sealed-ampoule diffusion at 700 °C with a P overpressure.
Abstract: Proton‐induced x‐ray emission combined with channeling techniques has been used to evaluate Zn‐diffused InP crystals. The measurements showed that the total Zn concentration was (1.00.3)×1019/cm3 with 505% of the dopant residing on lattice sites for samples prepared by sealed‐ampoule diffusion at 700 °C with a P overpressure. Hall measurements yielded a hole concentration of (5.00.5)×1018/cm3, indicating that most of the substitutional Zn in InP is electrically active and not associated in neutral substitutional complexes as previously suggested. Fine precipitates observed by transmission electron microscopy are assumed to contain the nonsubstitutional Zn.
Patent•
08 Apr 1980TL;DR: A locking device for a two part plug-in connector comprises two separate locking pieces (10,20), one mounted on one part of the connector and including hooks, the other mounted on a second part of connector and comprising hook-receiving notches.
Abstract: A locking device for a two part plug-in connector comprises two separate locking pieces (10,20), one mounted on one part of the connector and including hooks, the other mounted on a second part of the connector and comprising hook-receiving notches One or other of the locking pieces (10,20) is movable relative to its connector part