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Institution

Alcatel-Lucent

Stuttgart, Germany
About: Alcatel-Lucent is a based out in Stuttgart, Germany. It is known for research contribution in the topics: Signal & Network packet. The organization has 37003 authors who have published 53332 publications receiving 1430547 citations. The organization is also known as: Alcatel-Lucent S.A. & Alcatel.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the magnetoresistance and the field dependent magnetization have been systematically examined in the low temperature ferromagnetic metallic state of single crystal and polycrystalline.
Abstract: The magnetoresistance (MR) and the field dependent magnetization have been systematically examined in the low temperature ferromagnetic metallic state of single crystal and polycrystalline ${\mathrm{La}}_{2/3}{\mathrm{Sr}}_{1/3}{\mathrm{MnO}}_{3}$. We find that the intrinsic negative MR in single crystal is due to the suppression of spin fluctuations, and magnetic domain boundaries do not dominate the scattering process. In contrast, we demonstrate that the MR in the polycrystalline samples exhibits two distinct regions: large MR at low fields dominated by spin-polarized tunneling between grains and high field MR which is remarkably temperature independent from 5 to 280 K.

1,594 citations

Journal ArticleDOI
12 Mar 2004-Science
TL;DR: This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as ∼15 cm2/V·s and subthreshold slopes as low as 2nF·V/decade·cm2.
Abstract: We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.

1,593 citations

Journal ArticleDOI
TL;DR: In this article, the authors discuss the basic quantitative features of the observed BOLD-based signal changes, including the signal amplitude and its magnetic field dependence and dynamic effects such as a pronounced oscillatory pattern that is induced in the signal from primary visual cortex during photic stimulation experiments.

1,581 citations

Journal ArticleDOI
TL;DR: In this article, a series of terminally substituted alkyl thiols, X(CH 2 ) 15 SH (X=CH 3, CH 2 OH, CO 2 H, CO2 CH 3, and CONH 2 ), have been prepared by adsorption from solution onto evaporated gold substrates.
Abstract: Monolayers of a series of terminally substituted alkyl thiols, X(CH 2 ) 15 SH (X=CH 3 , CH 2 OH, CO 2 H, CO 2 CH 3 , and CONH 2 ), have been prepared by adsorption from solution onto evaporated gold substrates. The structures habe been characterized by infrared (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), ellipsometry, and temperature-programmed desorption (TPD). The IR data shows the monolayer films to be densely packed, crystalline-like structures with all-trans conformation alkyl chains exhibiting average tilt angles of the chain axis in a range of 28-40° from the surface normal and an approximate 55° twist of the chain axis away from a configuration with the CCC plane perpendicular to the surface plane

1,525 citations

Journal ArticleDOI
Hongzhou Wang1
TL;DR: This survey summarizes, classifies, and compares various existing maintenance policies for both single-unit and multi-unit systems, with emphasis on single- unit systems.

1,507 citations


Authors

Showing all 37011 results

NameH-indexPapersCitations
George M. Whitesides2401739269833
Yoshua Bengio2021033420313
John A. Rogers1771341127390
Zhenan Bao169865106571
Thomas S. Huang1461299101564
Federico Capasso134118976957
Robert S. Brown130124365822
Christos Faloutsos12778977746
Robert J. Cava125104271819
Ramamoorthy Ramesh12264967418
Yann LeCun121369171211
Kamil Ugurbil12053659053
Don Towsley11988356671
Steven P. DenBaars118136660343
Robert E. Tarjan11440067305
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202212
202130
202050
201983
2018215