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Institution

Alcatel-Lucent

Stuttgart, Germany
About: Alcatel-Lucent is a based out in Stuttgart, Germany. It is known for research contribution in the topics: Signal & Network packet. The organization has 37003 authors who have published 53332 publications receiving 1430547 citations. The organization is also known as: Alcatel-Lucent S.A. & Alcatel.


Papers
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Journal ArticleDOI
TL;DR: A simple equation to model the dependence of the glass transition temperature (T g ) on the extent of reaction in highly cross-linked thermosetting polymers has been derived in this article, assuming that the increase in T g is caused by decrease in chain-end concentration, formation of effective cross-links, and further decrease in the configurational entropy due to departure from Gaussian behavior at high cross-link densities.
Abstract: A simple equation to model the dependence of the glass transition temperature (T g ) on the extent of reaction in highly cross-linked thermosetting polymers has been derived. The model assumes that the increase in T g is caused by (a) decrease in chain-end concentration, (b) formation of effective cross-links, and (c) further decrease in the configurational entropy due to departure from Gaussian behavior at high cross-link densities

227 citations

Patent
10 Jan 1996
TL;DR: In this paper, the MCM tiles are packaged without wire-bond interconnections and in a total thickness which is reduced relative to conventional MCM packaging, including a substrate with a plurality of peripheral metallizations and at least one chip flip-chip mounted on the substrate.
Abstract: Described is a novel packaging of MCM tiles without wire-bond interconnections and in a total thickness which is reduced relative to conventional MCM packaging The MCM tile includes a substrate with a plurality of peripheral metallizations and at least one chip flip-chip mounted on the substrate. The PWB is provided with an aperture which is smaller than the size of the silicon substrate but larger than the outside dimensions of the mounted chips. The substrate is positioned on the PWB so that its ends overlap areas of the PWB adjacent the aperture and the chips fit into the aperture. Peripheral metallizations on the substrate are interconnected to metallizations on the PWB by either solder reflow technology or conductive adhesive technology.

226 citations

Patent
01 Apr 1983
TL;DR: In this paper, the connection areas adapted to connect the component externally are formed by a metal array (3, 4) deposited on a conductive layer (6) of low melting point alloy, itself deposited on the metal temporary substrate (7).
Abstract: In the manufacture of a semiconductor component, connection areas adapted to connect the component externally are formed by a metal array (3, 4) deposited on a conductive layer (6) of low melting point alloy, itself deposited on a metal temporary substrate (7). Each component chip (1) is placed in position and connected and then immobilized by means of a hardenable resin (5). The temporary substrate (7) is then removed by melting the alloy layer (6) to expose the surfaces of the connection areas (3, 4) for making external electrical and/or thermal connections to the encapsulated component.

226 citations

Journal ArticleDOI
TL;DR: In this article, the authors reported a self-frequency shift of more than 20% of the optical frequency in a tapered air-silica microstructure fiber that exhibits a widely flattened large anomalous dispersion in the near infrared.
Abstract: We report a soliton self-frequency shift of more than 20% of the optical frequency in a tapered air–silica microstructure fiber that exhibits a widely flattened large anomalous dispersion in the near infrared. Remarkably, the large frequency shift was realized in a fiber of length as short as 15 cm, 2 orders of magnitude shorter than those reported previously with similar input pulse duration and pulse energies, owing to the small mode size and the large and uniform dispersion in the tapered fiber. By varying the power of the input pulses, we generated compressed sub-100-fs soliton pulses of ∼1‐nJ pulse energy tunable from 1.3 to 1.65 μm with greater than 60% conversion efficiency.

226 citations

Journal ArticleDOI
TL;DR: A wideband space-time channel model is defined, which captures the multiple dependencies and variability in multicell system-wide operating environments and its implementation complexity is reasonable so it can be used in simulating large-scale systems.
Abstract: A wideband space-time channel model is defined, which captures the multiple dependencies and variability in multicell system-wide operating environments. The model provides a unified treatment of spatial and temporal parameters, giving their statistical description and dependencies across a large geographical area for three outdoor environments pertinent to third-generation cellular system simulations. Parameter values are drawn from a broad base of recently published wideband and multiple-antenna measurements. A methodology is given to generate fast-fading coefficients between a base station and a mobile user based on the summation of directional plane waves derived from the statistics of the space-time parameters. Extensions to the baseline channel model, such as polarized antennas, are given to provide a greater variety of spatial environments. Despite its comprehensive nature, the model's implementation complexity is reasonable so it can be used in simulating large-scale systems. Output statistics and capacities are used to illustrate the main characteristics of the model

226 citations


Authors

Showing all 37011 results

NameH-indexPapersCitations
George M. Whitesides2401739269833
Yoshua Bengio2021033420313
John A. Rogers1771341127390
Zhenan Bao169865106571
Thomas S. Huang1461299101564
Federico Capasso134118976957
Robert S. Brown130124365822
Christos Faloutsos12778977746
Robert J. Cava125104271819
Ramamoorthy Ramesh12264967418
Yann LeCun121369171211
Kamil Ugurbil12053659053
Don Towsley11988356671
Steven P. DenBaars118136660343
Robert E. Tarjan11440067305
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202212
202130
202050
201983
2018215