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Institution

Alcatel-Lucent

Stuttgart, Germany
About: Alcatel-Lucent is a based out in Stuttgart, Germany. It is known for research contribution in the topics: Signal & Network packet. The organization has 37003 authors who have published 53332 publications receiving 1430547 citations. The organization is also known as: Alcatel-Lucent S.A. & Alcatel.


Papers
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Patent
17 Feb 1998
TL;DR: In this paper, a co-synthesis algorithm, called COSYN, is proposed to start with periodic task graphs with real-time constraints and produce a low-cost heterogeneous distributed embedded system architecture.
Abstract: Hardware-software co-synthesis is the process of partitioning an embedded system specification into hardware and software modules to meet performance, power, and cost goals. Embedded systems are generally specified in terms of a set of acyclic task graphs. According to one embodiment of the present invention, a co-synthesis algorithm, called COSYN, starts with periodic task graphs with real-time constraints and produces a low-cost heterogeneous distributed embedded system architecture meeting these constraints. The algorithm has the following features: 1) it allows the use of multiple types of processing elements (PEs) and inter-PE communication links, where the links can take various forms (point-to-point, bus, local area network, etc.), 2) it supports both concurrent and sequential modes of communication and computation, 3) it employs a combination of preemptive and non-preemptive scheduling, 4) it introduces the concept of an association array to tackle the problem of multi-rate systems (which are commonly found in multimedia applications), 5) it uses a static scheduler based on deadline-based priority levels for accurate performance estimation of a co-synthesis solution, 6) it uses a new task clustering technique which takes the changing nature of the critical path in the task graph into account, 7) it supports pipelining of task graphs to derive a cost-efficient architecture, 8) it supports a mix of various technologies, such as 5 V CMOS, 3.3 V CMOS, 2.7 V CMOS, ECL, etc., to meet embedded system constraints and minimize power dissipation, and 9) if desired, it also optimizes the architecture for power consumption.

203 citations

Proceedings ArticleDOI
09 May 2004
TL;DR: A novel packet logging based traceback scheme that requires an order of magnitude smaller processing and storage cost than the hash-based scheme proposed by Snoeren, et al. (2001), thereby being able to scalable to much higher link speed (e.g., OC-768).
Abstract: Tracing attack packets to their sources, known as IP traceback, is an important step to counter distributed denial-of-service (DDoS) attacks. In this paper, we propose a novel packet logging based (i.e., hash-based) traceback scheme that requires an order of magnitude smaller processing and storage cost than the hash-based scheme proposed by Snoeren, et al. (2001), thereby being able to scalable to much higher link speed (e.g., OC-768). The baseline idea of our approach is to sample and log a small percentage (e.g., 3.3%) of packets. The challenge of this low sampling rate is that much more sophisticated techniques need to be used for traceback. Our solution is to construct the attack tree using the correlation between the attack packets sampled by neighboring routers. The scheme using naive independent random sampling does not perform well due to the low correlation between the packets sampled by neighboring routers. We invent a sampling scheme that improves this correlation and the overall efficiency significantly. Another major contribution of this work is that we introduce a novel information-theoretic framework for our traceback scheme to answer important questions on system parameter tuning and the fundamental trade-off between the resource used for traceback and the traceback accuracy. Simulation results based on real-world network topologies (e.g. Skitter) match very well with results from the information-theoretic analysis. The simulation results also demonstrate that our traceback scheme can achieve high accuracy, and scale very well to a large number of attackers (e.g., 5000+).

203 citations

Journal ArticleDOI
TL;DR: In this paper, 1 kV 4H and 6 h SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination were fabricated using Ni-SiC ohmic contact formation.
Abstract: We have fabricated 1 kV 4H and 6H SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination. This simple structure when used with a high barrier height metal such as Ni has consistently given us good yield of Schottky diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design considerations, the fabrication procedure, and characterization results for these 1 kV Ni-SiC Schottky diodes. Comparison to similarly fabricated Pt-SiC Schottky diodes is reported. The Ni-SiC ohmic contact formation has been studied using Auger electron spectroscopy and X-ray diffraction. The characterization study includes measurements of current-voltage (I-V) temperature and capacitance-voltage (C-V) temperature characteristics. The high-temperature performance of these diodes has also been investigated. The diodes show good rectifying behavior with ON/OFF current ratios, ranging from 10/sup 6/ to 10 at 27/spl deg/C and in excess of 10/sup 6/ up to 300/spl deg/C.

202 citations

Journal ArticleDOI
TL;DR: In this article, a model for charge transport is developed which suggests that thermionic emission over the organic/inorganic contact barrier dominates at low current densities, whereas space charge effects dominate transport through the organic layer at high current density.
Abstract: We discuss the properties of organic‐on‐inorganic (OI) semiconductor contact barrier diodes. A model for charge transport is developed which suggests that thermionic emission over the organic/inorganic contact barrier dominates at low current densities, whereas space‐charge effects dominate transport through the organic layer at high current densities. The effects of charge trapping in the organic layer are also considered. This model is applied to OI diodes using thin films of the prototypical aromatic compound; 3,4,9,10‐perylenetetracarboxylic dianhydride, (PTCDA) vapor‐deposited onto n‐ and p‐Si substrates. Several electrical and optical properties of PTCDA are investigated to provide a basis for analyzing the OI diodes. Both ohmic and space‐charge‐limited transport are observed in the PTCDA. We discuss mobility, transient response, and photoresponse of the thin‐film organic material. Also described are the general properties of organic‐on‐inorganic contact barrier diodes which employ PTCDA and related...

202 citations

Journal ArticleDOI
TL;DR: In this paper, a two-sided interface-plasmon waveguide was used for a 20.5-μm-wavelength laser with a peak power of a few milliwatts at cryogenic temperatures.
Abstract: Quantum-cascade lasers operating above 20 μm (at λ∼21.5 μm and λ∼24 μm) wavelength are reported. Pulsed operation was obtained up to 140 K and with a peak power of a few milliwatts at cryogenic temperatures. Laser action originates from interminiband transitions in “chirped” superlattice active regions. The waveguides are based on surface-plasmon modes confined at a metal–semiconductor interface. The wavelengths were chosen in order to avoid major phonon absorption bands, which are particularly strong at energies just above the reststrahlen band. We also report on a 21.5-μm-wavelength laser based on a two-sided interface-plasmon waveguide.

202 citations


Authors

Showing all 37011 results

NameH-indexPapersCitations
George M. Whitesides2401739269833
Yoshua Bengio2021033420313
John A. Rogers1771341127390
Zhenan Bao169865106571
Thomas S. Huang1461299101564
Federico Capasso134118976957
Robert S. Brown130124365822
Christos Faloutsos12778977746
Robert J. Cava125104271819
Ramamoorthy Ramesh12264967418
Yann LeCun121369171211
Kamil Ugurbil12053659053
Don Towsley11988356671
Steven P. DenBaars118136660343
Robert E. Tarjan11440067305
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202212
202130
202050
201983
2018215